Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

Simulated morphological landscape of polymer single crystals by phase-field model

The novel phase field model with the "polymer characteristic" was established based on a nonconserved spatiotemporal Ginzburg-Landau equation (TDGL model A). Especially, we relate the diffusion equation with the crystal growth faces of polymer single crystals. Namely, the diffusion equations are discretized according to the diffusion coefficient of every lattice site in various crystal growth faces and the shape of lattice is selected based on the real proportion of the unit cell dimensions.

Study on the Single Crystals of Poly(3-octylthiophene) Induced by Solvent-Vapor Annealing

Needle-like single crystals of poly(3-octylthiophene) (P3OT) have been prepared by tetrahydrofuran-vapor annealing. The morphology and structure of the crystals were characterized with optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and wide-angle X-ray diffraction. It is observed that the P3OT molecules are packed with the backbones parallel to the length axis of the crystal and the alkyl side chains perpendicular to the substrate. The field effect transistor based on the P3OT single crystal exhibited a charge carrier mobility of 1.54 x 10(-4) cm(2)/(Vs) and on/off current ratio of 37, and the molecular orientation of the crystal is ascribed to account for the device performance. The time-dependent morphological evolution demonstrated that the crystals underwent Ostwald ripening when annealed.

Morphology of head-to-tail poly(3-hexylthiophene) single crystals from solution crystallization

Single crystals of head-to-tail poly(3-hexylthiophene)s have been grown through the method of isothermal solution crystallization. Electron diffraction in combination with powder X-ray diffraction revealed the crystal structure, a = 1.52 nm, b = 3.36 nm, c = 1.56 nm and alpha = beta = gamma = 90 degrees.

Extended-chain lamellar packing of poly(3-butylthiophene) in single crystals

We developed an approach, i.e. solvent-assist crystallization (SAC), for growing high quality single crystals of head-to-tail regio-regular poly(3-butylthiophene) (P3BT). By means of atomic force microscopy, electron diffraction and X-ray diffraction, we found that P3BT macromolecules formed lamella single crystals through gradient crystallization, and in the single crystals, molecules packed normal to the lamella with extended-chain conformation with alkyl side chains in the growth front during crystallization.

Morphology and structure of poly(di-n-butylsilane) single crystals prepared by controlling kinetic process of solvent evaporation

The silicon backbone conformation in poly(di-n-butylsilane) (PDBS) has been shown to be a 7/3 helix at ambient conditions, which is in marked contrast to the near-planar conformation of its homologous polymers with side chain lengths of one to three or six to eight carbon atoms. In this work, both the 7/3 helical and near-planar chain conformations are achieved by controlling the solvent evaporation rate around room temperature. The chain conformation and crystal structure obtained in this method have been correlated to the crystal morphology by wide-angle X-ray diffraction, transmission electron microscopy, electron diffraction, optical microscopy, atomic force microscopy, and UV absorption spectrum. The lath-shaped single crystals obtained at 12 degreesC correspond to an orthorhombic form with near-planar chain conformation whereas the lozenge-shaped single crystals obtained at 30 degreesC (in coexistence with the lath-shaped crystals) are orthohexagonal with a 7/3 helix.

Conducting probe atomic force microscopy investigation of anisotropic charge transport in solution cast PBD single crystals induced by an external field

2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxdiazole (PBD) is a good electron-transporting material and can form single crystals from solution. In this work, solution cast PBD single crystals with different crystallographic axes (b, c) perpendicular to the Au/S substrates in large area are achieved by controlling the rate of solvent evaporation in the presence and absence of external electrostatic field, respectively. The orientation of these single crystals on Au/S substrate was characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Conducting probe atomic force microscopy (CP-AFM) was used to measure the charge transport characteristics of PBD single crystals grown on Au/S substrates. Transport was measured perpendicular to the substrate between the CP-AFM tip and the Au/S substrate. The electron mobility of 3 x 10(-3) cm(2)/(V s) for PBD single crystal along crystallographic b-axis is determined. And the electron mobility of PBD single crystal along the c-axis is about 2 orders of magnitude higher than that along the b-axis due to the anisotropic charge transport at the low voltage region.

Direct formation of form I poly(1-butene) single crystals from melt crystallization in ultrathin films

The morphologies and crystalline structures of melt-crystallized ultrathin isotactic poly(1-butene) films have been studied with transmission electron microscopy and electron diffraction. It is demonstrated that a bypass of form II crystallization can be achieved with an increase in its crystallization temperature. Electron microscopy observations show that melt-grown isotactic poly(1-butene) single crystals have a well-shaped hexagonal form, whereas form I crystals converted from form II display the morphologies of their tetragonal precursors. Electron diffraction results indicate that, instead of the twinned hexagonal pattern of the converted form I crystal, the directly formed form I single crystals exhibit an untwinned hexagonal pattern.

Morphology and structure of nylon-2,14 single crystals from dilute solution

A perfect single crystal of nylon-2,14 was prepared from 0.02% (w/v) 1,4-butanediol solution by a "self-seeding" technique and isothermal crystallization at 120 and 145 degreesC. The morphology and structure features were examined by transmission electron microscopy with both image and diffraction modes, atomic force microscopy, and wide-angle X-ray diffraction (WAXD). The nylon-2,14 single crystal grown from 1,4-butanediol at 145 degreesC inhabited a lathlike shape with a lamellar thickness of about 9 nm. Electron diffraction and WAXD data indicated that nylon-2,14 crystallized in a triclinic system with lattice dimensions a = 0.49 nm, b = 0.51 nm, c = 2.23 nm, alpha = 60.4degrees, beta = 77degrees, and gamma = 59degrees. The crystal structure is different from that of nylon-6,6 but similar to that of other members of nylon-2Y.

Study on single crystals of butyl branched polyethylene in the presence of electric field

Single crystal of butyl branched polyethylene with various molecular weight formed from the melt in the presence of electric field was studied. It was found that electric field influenced morphology and structure of the butyl branched polyethylene single crystals formed. The lateral habits of the single crystals were circular shape, which was different from truncated lozenge or lenticular shape single crystals formed from the melt in the absence of electric field. The stems in the single crystals formed in the presence Of electric field were perpendicular to the basal plane of the single crystals, which was different from chain tilting in single crystals formed from the melt in the absence of electric field. The electron diffraction patterns showed that the structure of the circular single crystals was a quasi-hexagonal with looser chain packing. This looser chain packing was favorable to thickening growth of single crystals through chain sliding diffusion. The thickness of the single crystals was much larger and depended on molecular weight. It indicated that the single crystal in the presence of electric field should be an extended chain type Single crystal.