Electronic energy transfer processes and charge carrier transport in pi-conjugated polymers

Conjugated polymers have attracted tremendous academical and industrial research interest over the past decades due to the appealing advantages that organic / polymeric materials offer for electronic applications and devices such as organic light emitting diodes (OLED), organic field effect transistors (OFET), organic solar cells (OSC), photodiodes and plastic lasers. The optimization of organic materials for applications in optoelectronic devices requires detailed knowledge of their photophysical properties, for instance energy levels of excited singlet and triplet states, excited state decay mechanisms and charge carrier mobilities. In the present work a variety of different conjugated (co)polymers, mainly polyspirobifluorene- and polyfluorene-type materials, was investigated using time-resolved photoluminescence spectroscopy in the picosecond to second time domain to study their elementary photophysical properties and to get a deeper insight into structure-property relationships. The experiments cover fluorescence spectroscopy using Streak Camera techniques as well as time-delayed gated detection techniques for the investigation of delayed fluorescence and phosphorescence. All measurements were performed on the solid state, i.e. thin polymer films and on diluted solutions. Starting from the elementary photophysical properties of conjugated polymers the experiments were extended to studies of singlet and triplet energy transfer processes in polymer blends, polymer-triplet emitter blends and copolymers. The phenomenon of photonenergy upconversion was investigated in blue light-emitting polymer matrices doped with metallated porphyrin derivatives supposing an bimolecular annihilation upconversion mechanism which could be experimentally verified on a series of copolymers. This mechanism allows for more efficient photonenergy upconversion than previously reported for polyfluorene derivatives. In addition to the above described spectroscopical experiments, amplified spontaneous emission (ASE) in thin film polymer waveguides was studied employing a fully-arylated poly(indenofluorene) as the gain medium. It was found that the material exhibits a very low threshold value for amplification of blue light combined with an excellent oxidative stability, which makes it interesting as active material for organic solid state lasers. Apart from spectroscopical experiments, transient photocurrent measurements on conjugated polymers were performed as well to elucidate the charge carrier mobility in the solid state, which is an important material parameter for device applications. A modified time-of-flight (TOF) technique using a charge carrier generation layer allowed to study hole transport in a series of spirobifluorene copolymers to unravel the structure-mobility relationship by comparison with the homopolymer. Not only the charge carrier mobility could be determined for the series of polymers but also field- and temperature-dependent measurements analyzed in the framework of the Gaussian disorder model showed that results coincide very well with the predictions of the model. Thus, the validity of the disorder concept for charge carrier transport in amorphous glassy materials could be verified for the investigated series of copolymers.

Thiophene- Based Materials for Photovoltaic Applications

Thiophene oligomers (OTs) and polymers (PTs) are currently attracting remarkable attention as organic materials showing semiconducting, fluorescent, nonlinear optical and liquid crystalline properties. All these properties can be fine-tuned through minor structural modifications. As a consequence, thiophene oligomers and polymers are among the most investigated compounds for applications in organic electronics, optoelectronics and thin film devices such as field effect transistors (FETs), light emitting diodes (LEDs) and photovoltaic devices (PVDs). Our research aims to explore the self-assembly features and the optical, electrical and photovoltaic properties of a class of thiophene based materials so far scarcely investigated, namely that of oligo- and polythiophenes head-to-head substituted with alkyl or S-alkyl chains. In particular, we synthesized these compounds in short reaction times, high yields, high purity and environmentally friendly procedures taking advantage of ultrasound (US) and microwave (MW) enabling technologies in Suzuki-Miyaura cross-couplings.

Terrylendiimide als Biolabel und funktionelle Farbstoffe

In dieser Arbeit werden neue Rylenimide und Anwendungsmöglichkeiten für diese Farbstoffklasse beschrieben, die sich durch hohe Photostabilitäten und hohe Fluoreszenzquantenausbeute auszeichnet. Ziel dieser Arbeit war es, durch systematische Wahl der Substituenten in den Imidstrukturen und/oder den bay-Regionen von Rylendiimidfarbstoffen vollkommen neue Produkteigenschaften zu verwirklichen, Reaktionen bzw. Anwendungen zu ermöglichen und den Aufbau von komplexeren Chromophorarchitekturen zu gestatten. Das Strukturmotiv des Terrylendiimids nahm dabei die zentrale Rolle ein. Die Arbeit wurde in vier Kapitel aufgeteilt. Das Ziel des ersten Kapitels war es, wasserlösliche Terrylendiimide zur Untersuchung von biologischen Proben im Wellenlängenbereich über 600 nm einzusetzen. Ein wasserlösliches Terrylendiimid erwies sich dabei als deutlich photostabiler als zwei weitverbreitete Fluoreszenzfarbstoffe. Eine erste Proteinmarkierung mit monofunktionellem Farbstoff wurde an Proteinmolekülen erfolgreich durchgeführt. Durch gezielte Modifikationen konnten zwei Terrylendiimide hergestellt werden, die sich noch deutlich besser zum Abbilden von Zellstrukturen eignen. In dem zweiten Kapitel spielte die Löslichkeit von Rylendiimiden in organischen Lösungsmitteln eine zentrale Rolle. Es wurde eine Rylendiimidserie hergestellt, deren löslichkeitssteigernde Gruppen eine Organisation der Moleküle in ausgedehnten Stapelstrukturen nicht verhindern. Mit dieser Serie konnte das flüssigkristalline Verhalten und die Selbstorganisation in der Rylendiimidreihe untersucht werden. Aufbauend auf diesen Ergebnissen wurde die Selbstorganisation der Diimide in Donor-Akzeptor Gemischen untersucht. In STM-Experimenten konnten für alle drei Diimide selbstorganisierte Monoschichten mit dem Rastertunnelmikroskop mit molekularer Auflösung abgebildet werden. Darüber hinaus wurden in diesem Kapitel die ersten organischen Feldeffekttransistoren (OFET) auf der Basis des synthetisierten Terrylendiimids beschrieben. Im Rahmen eines Projektes in dem die elektronische Energieübertragung in Donor-Akzeptor-Diaden mit Hilfe von Einzelmolekülspektroskopie untersucht wird, wurde eine Perylendiimid-Terrylediimid Diade hergestellt. Die geringere Photostabilität des Donors ermöglichte zeitaufgelöste Einzelmolekül-messungen der Akzeptoremission mit und ohne Energietransfer vom Donor auf den Akzeptor. Durch diese Messungen konnten die Zeitkonstanten des Energietransfers für einzelne Diaden ermittelt werden. Ein weiterer Chromophor aus diesem Donor-Akzeptor-Paar soll die Möglichkeit eröffnen, den Energiefluß im Molekül gezielt zu manipulieren. Dazu wurde ein Donorchromophor mit zwei Akzeptoren in einem Multichromophor kombiniert. Im Rahmen der Synthesen dieser Arbeit wurden Terrylendiimide hergestellt, die in einer Imidstruktur eine Halogenfunktion trugen. Diese waren wichtige Synthesebausteine zum Aufbau von komplexen Chromophorarchitekturen. Ziel eines weiteren Kapitels war es, ein Terrylendiimid herzustellen, das als Sensibilisatorfarbstoff gemeinsam mit dem Haupt-Antennenkomplex von höheren Pflanzen LHCII in einer photoelektrochemischen Farbstoff-Solarzelle integriert werden konnte. Das hergestellte Terrylendiimid mit Carbonsäuregruppe eignete sich für Farbstoffsolarzellen auf Zinndioxidbasis.

From MALDI-TOF mass spectrometry to soft-landing for electronics

Within this PhD thesis matrix assisted laser desorption/ionization mass spectrometry (MALDI-MS) has been used as a reliable tool for the quantitative characterization of giant molecules, such as alkyl substituted and unsubstituted large polycyclic aromatic hydrocarbons (PAH), which cannot be characterized by conventional analytic techniques due to their lack of solubility. The use of the MALDI solvent-free technique for the sample preparation and the application of the standard addition method have allowed the quantitative characterization of synthetic PAH mixtures. The knowledge, acquired by studying these representative systems, has been then transferred to the quantitative analyses of complex and slightly soluble natural PAH mixtures, such as mesophase pitch. Moreover, the possibility to ionize intractable and insoluble molecules via mass spectrometry has been recognized to be not only a powerful analytical method, but also to represent a unique change to handle giant aromatic systems and to deposit them on a surface for further investigations, in a process, which is defined as “soft-landing”. Within this novel deposition technique, ions of the desired analytes or analyte mixtures are generated by means of an MS ionization source, discriminated by their different mass to charge ratios via a mass analyzer and landed with retention of their structure on a desired surface. This soft-deposition is guaranteed by the use of decelerating potentials, which have in this work been recognized to influence the final packing of the analyte molecules reaching the landing surface. For a more detailed study of the electrical field action on disc-like and rod-like molecules, soft-landing-independent experiments have been additionally carried out. As a result unidirectionally ordered films of the analyte molecules have been obtained due to the application of an external electrical strength. This versatile alignment technique has then been used for obtaining ordered layers of semiconducting materials for the fabrication of organic field effect transistors (OFET) with improved performances.

Simulations of charge transport in organic compounds

To aid the design of organic semiconductors, we study the charge transport properties of organic liquid crystals, i.e. hexabenzocoronene and carbazole macrocycle, and single crystals, i.e. rubrene, indolocarbazole and benzothiophene derivatives (BTBT, BBBT). The aim is to find structure-property relationships linking the chemical structure as well as the morphology with the bulk charge carrier mobility of the compounds. To this end, molecular dynamics (MD) simulations are performed yielding realistic equilibrated morphologies. Partial charges and molecular orbitals are calculated based on single molecules in vacuum using quantum chemical methods. The molecular orbitals are then mapped onto the molecular positions and orientations, which allows calculation of the transfer integrals between nearest neighbors using the molecular orbital overlap method. Thus we obtain realistic transfer integral distributions and their autocorrelations. In case of organic crystals the differences between two descriptions of charge transport, namely semi-classical dynamics (SCD) in the small polaron limit and kinetic Monte Carlo (KMC) based on Marcus rates, are studied. The liquid crystals are investigated solely in the hopping limit. To simulate the charge dynamics using KMC, the centers of mass of the molecules are mapped onto lattice sites and the transfer integrals are used to compute the hopping rates. In the small polaron limit, where the electronic wave function is spread over a limited number of neighboring molecules, the Schroedinger equation is solved numerically using a semi-classical approach. The results are compared for the different compounds and methods and, where available, with experimental data. The carbazole macrocycles form columnar structures arranged on a hexagonal lattice with side chains facing inwards, so columns can closely approach each other allowing inter-columnar and thus three-dimensional transport. When taking only intra-columnar transport into account, the mobility is orders of magnitude lower than in the three-dimensional case. BTBT is a promising material for solution-processed organic field-effect transistors. We are able to show that, on the time-scales of charge transport, static disorder due to slow side chain motions is the main factor determining the mobility. The resulting broad transfer integral distributions modify the connectivity of the system but sufficiently many fast percolation paths remain for the charges. Rubrene, indolocarbazole and BBBT are examples of crystals without significant static disorder. The high mobility of rubrene is explained by two main features: first, the shifted cofacial alignment of its molecules, and second, the high center of mass vibrational frequency. In comparsion to SCD, only KMC based on Marcus rates is capable of describing neighbors with low coupling and of taking static disorder into account three-dimensionally. Thus it is the method of choice for crystalline systems dominated by static disorder. However, it is inappropriate for the case of strong coupling and underestimates the mobility of well-ordered crystals. SCD, despite its one-dimensionality, is valuable for crystals with strong coupling and little disorder. It also allows correct treatment of dynamical effects, such as intermolecular vibrations of the molecules. Rate equations are incapable of this, because simulations are performed on static snapshots. We have thus shown strengths and weaknesses of two state of the art models used to study charge transport in organic compounds, partially developed a program to compute and visualize transfer integral distributions and other charge transport properties, and found structure-mobility relations for several promising organic semiconductors.

Charge-transport simulations in organic semiconductors

In this thesis we have extended the methods for microscopic charge-transport simulations for organic semiconductors. In these materials the weak intermolecular interactions lead to spatially localized charge carriers, and the charge transport occurs as an activated hopping process between diabatic states. In addition to weak electronic couplings between these states, different electrostatic environments in the organic material lead to a broadening of the density of states for the charge energies which limits carrier mobilities.rnThe contributions to the method development includern(i) the derivation of a bimolecular charge-transfer rate,rn(ii) the efficient evaluation of intermolecular (outer-sphere) reorganization energies,rn(iii) the investigation of effects of conformational disorder on intramolecular reorganization energies or internal site energiesrnand (iv) the inclusion of self-consistent polarization interactions for calculation of charge energies.These methods were applied to study charge transport in amorphous phases of small molecules used in the emission layer of organic light emitting diodes (OLED).rnWhen bulky substituents are attached to an aromatic core in order to adjust energy levels or prevent crystallization, a small amount of delocalization of the frontier orbital to the substituents can increase electronic couplings between neighboring molecules. This leads to improved charge-transfer rates and, hence, larger charge-mobility. We therefore suggest using the mesomeric effect (as opposed to the inductive effect) when attaching substituents to aromatic cores, which is necessary for example in deep blue OLEDs, where the energy levels of a host molecule have to be adjusted to those of the emitter.rnFurthermore, the energy landscape for charges in an amorphous phase cannot be predicted by mesoscopic models because they approximate the realistic morphology by a lattice and represent molecular charge distributions in a multipole expansion. The microscopic approach shows that a polarization-induced stabilization of a molecule in its charged and neutral states can lead to large shifts, broadening, and traps in the distribution of charge energies. These results are especially important for multi-component systems (the emission layer of an OLED or the donor-acceptor interface of an organic solar cell), if the change in polarizability upon charging (or excitation in case of energy transport) is different for the components. Thus, the polarizability change upon charging or excitation should be added to the set of molecular parameters essential for understanding charge and energy transport in organic semiconductors.rnWe also studied charge transport in self-assembled systems, where intermolecular packing motives induced by side chains can increase electronic couplings between molecules. This leads to larger charge mobility, which is essential to improve devices such as organic field effect transistors, where low carrier mobilities limit the switching frequency.rnHowever, it is not sufficient to match the average local molecular order induced by the sidernchains (such as the pitch angle between consecutive molecules in a discotic mesophase) with maxima of the electronic couplings.rnIt is also important to make the corresponding distributions as narrow as possible compared to the window determined by the closest minima of thernelectronic couplings. This is especially important in one-dimensional systems, where charge transport is limited by the smallest electronic couplings.rnThe immediate implication for compound design is that the side chains should assist the self-assemblingrnprocess not only via soft entropic interactions, but also via stronger specific interactions, such as hydrogen bonding.rnrnrnrn

Chemical transformations of the pyrene K-region for functional materials

In dieser Arbeit wurde eine neue Methode zur asymmetrischen Substitution der K-Regionen von Pyren entwickelt, auf welcher das Design und die Synthese von neuartigen, Pyren-basierten funktionalen Materialien beruht. Eine Vielzahl von Substitutionsmustern konnte erfolgreich realisiert werden um die Eigenschaften entsprechend dem Verwendungszweck anzupassen. Der polyzyklische aromatische Kohlenwasserstoff (PAK) Pyren setzt sich aus vier Benzolringen in Form einer planaren Raute mit zwei gegenüberliegenden K-Regionen zusammen. Der synthetische Schlüsselschritt dieser Arbeit ist die chemische Transformation der einen K-Region zu einem α-Diketon und der darauffolgenden selektiven Bromierung der zweiten K-Region. Dieser asymmetrisch funktionalisierte Baustein zeichnet sich durch zwei funktionelle Gruppen mit orthogonaler Reaktivität aus und erweitert dadurch das Arsenal der etablierten Pyren Chemie um eine vielseitig einsetzbare Methode. Aufbauend auf diesem synthetischen Zugang wurden fünf wesentliche Konzepte auf dem Weg zu neuen, von Pyren abgeleiteten Materialen verfolgt: (i) Asymmterische Substitution mit elektronenziehenden versus -schiebenden Gruppen. (ii) Darstellung von Pyrenocyaninen durch Anbindung von Pyren mit einer der K-Regionen an das Phthalocyanin Gerüst zur Ausdehnung des π-Systems. (iii) Einführung von Thiophen an die K-Region um halbleitende Eigenschaften zu erhalten. (iv) Symmetrische Annullierung von PAKs wie Benzodithiophen und Phenanthren an beide K Regionen für cove-reiche und dadurch nicht-planare Strukturen. (v) Verwendung des K-Region-funktionalisierten Pyrens als Synthesebaustein für das Peri-Pentacen. Neben der Synthese wurde die Selbstorganisation in der Festphase und an der flüssig/fest Grenzfläche mittels zweidimensionaler Weitwinkel-Röntgenstreuung (2D WAXS) bzw. Rastertunnelmikroskopie (STM) untersucht. Die halbleitenden Eigenschaften wurden in organischen Feld-Effekt Transistoren (OFETs) charakterisiert.

Tailoring, synthesis and structure-property relationships of 2,3-thienoimide based molecular materials

Organic molecular semiconductors are subject of intense research for their crucial role as key components of new generation low cost, flexible, and large area electronic devices such as displays, thin-film transistors, solar cells, sensors and logic circuits. In particular, small molecular thienoimide (TI) based materials are emerging as novel multifunctional materials combining a good processability together to ambipolar or n-type charge transport and electroluminescence at the solid state, thus enabling the fabrication of integrated devices like organic field effect transistors (OFETs) and light emitting transistor (OLETs). Given this peculiar combination of characteristics, they also constitute the ideal substrates for fundamental studies on the structure-property relationships in multifunctional molecular systems. In this scenario, this thesis work is focused on the synthesis of new thienoimide based materials with tunable optical, packing, morphology, charge transport and electroluminescence properties by following a fine molecular tailoring, thus optimizing their performances in device as well as investigating and enabling new applications. Investigation on their structure-property relationships has been carried out and in particular, the effect of different π-conjugated cores (heterocycles, length) and alkyl end chain (shape, length) changes have been studied, obtaining materials with enhanced electron transport capability end electroluminescence suitable for the realization of OFETs and single layer OLETs. Moreover, control on the polymorphic behaviour characterizing thienoimide materials has been reached by synthetic and post-synthetic methodologies, developing multifunctional materials from a single polymorphic compound. Finally, with the aim of synthesizing highly pure materials, simplifying the purification steps and avoiding organometallic residues, procedures based on direct arylation reactions replacing conventional cross-couplings have been investigated and applied to different classes of molecules, bearing thienoimidic core or ends, as well as thiophene and anthracene derivatives, validating this approach as a clean alternative for the synthesis of several molecular materials.

Chemical exfoliation of graphene and its application in organic electronics and energy storage devices

Graphene, the thinnest two-dimensional material possible, is considered as a realistic candidate for the numerous applications in electronic, energy storage and conversion devices due to its unique properties, such as high optical transmittance, high conductivity, excellent chemical and thermal stability. However, the electronic and chemical properties of graphene are highly dependent on their preparation methods. Therefore, the development of novel chemical exfoliation process which aims at high yield synthesis of high quality graphene while maintaining good solution processability is of great concern. This thesis focuses on the solution production of high-quality graphene by wet-chemical exfoliation methods and addresses the applications of the chemically exfoliated graphene in organic electronics and energy storage devices.rnPlatinum is the most commonly used catalysts for fuel cells but they suffered from sluggish electron transfer kinetics. On the other hand, heteroatom doped graphene is known to enhance not only electrical conductivity but also long term operation stability. In this regard, a simple synthetic method is developed for the nitrogen doped graphene (NG) preparation. Moreover, iron (Fe) can be incorporated into the synthetic process. As-prepared NG with and without Fe shows excellent catalytic activity and stability compared to that of Pt based catalysts.rnHigh electrical conductivity is one of the most important requirements for the application of graphene in electronic devices. Therefore, for the fabrication of electrically conductive graphene films, a novel methane plasma assisted reduction of GO is developed. The high electrical conductivity of plasma reduced GO films revealed an excellent electrochemical performance in terms of high power and energy densities when used as an electrode in the micro-supercapacitors.rnAlthough, GO can be prepared in bulk scale, large amount of defect density and low electrical conductivity are major drawbacks. To overcome the intrinsic limitation of poor quality of GO and/or reduced GO, a novel protocol is extablished for mass production of high-quality graphene by means of electrochemical exfoliation of graphite. The prepared graphene shows high electrical conductivity, low defect density and good solution processability. Furthermore, when used as electrodes in organic field-effect transistors and/or in supercapacitors, the electrochemically exfoliated graphene shows excellent device performances. The low cost and environment friendly production of such high-quality graphene is of great importance for future generation electronics and energy storage devices. rn

Functional ZnO nanostructures for electronic and energy applications

ZnO has proven to be a multifunctional material with important nanotechnological applications. ZnO nanostructures can be grown in various forms such as nanowires, nanorods, nanobelts, nanocombs etc. In this work, ZnO nanostructures are grown in a double quartz tube configuration thermal Chemical Vapor Deposition (CVD) system. We focus on functionalized ZnO Nanostructures by controlling their structures and tuning their properties for various applications. The following topics have been investigated: 1. We have fabricated various ZnO nanostructures using a thermal CVD technique. The growth parameters were optimized and studied for different nanostructures. 2. We have studied the application of ZnO nanowires (ZnONWs) for field effect transistors (FETs). Unintentional n-type conductivity was observed in our FETs based on as-grown ZnO NWs. We have then shown for the first time that controlled incorporation of hydrogen into ZnO NWs can introduce p-type characters to the nanowires. We further found that the n-type behaviors remained, leading to the ambipolar behaviors of hydrogen incorporated ZnO NWs. Importantly, the detected p- and n- type behaviors are stable for longer than two years when devices were kept in ambient conditions. All these can be explained by an ab initio model of Zn vacancy-Hydrogen complexes, which can serve as the donor, acceptors, or green photoluminescence quencher, depend on the number of hydrogen atoms involved. 3. Next ZnONWs were tested for electron field emission. We focus on reducing the threshold field (Eth) of field emission from non-aligned ZnO NWs. As encouraged by our results on enhancing the conductivity of ZnO NWs by hydrogen annealing described in Chapter 3, we have studied the effect of hydrogen annealing for improving field emission behavior of our ZnO NWs. We found that optimally annealed ZnO NWs offered much lower threshold electric field and improved emission stability. We also studied field emission from ZnO NWs at moderate vacuum levels. We found that there exists a minimum Eth as we scale the threshold field with pressure. This behavior is explained by referring to Paschen’s law. 4. We have studied the application of ZnO nanostructures for solar energy harvesting. First, as-grown and (CdSe) ZnS QDs decorated ZnO NBs and ZnONWs were tested for photocurrent generation. All these nanostructures offered fast response time to solar radiation. The decoration of QDs decreases the stable current level produced by ZnONWs but increases that generated by NBs. It is possible that NBs offer more stable surfaces for the attachment of QDs. In addition, our results suggests that performance degradation of solar cells made by growing ZnO NWs on ITO is due to the increase in resistance of ITO after the high temperature growth process. Hydrogen annealing also improve the efficiency of the solar cells by decreasing the resistance of ITO. Due to the issues on ITO, we use Ni foil as the growth substrates. Performance of solar cells made by growing ZnO NWs on Ni foils degraded after Hydrogen annealing at both low (300 °C) and high (600 °C) temperatures since annealing passivates native defects in ZnONWs and thus reduce the absorption of visible spectra from our solar simulator. Decoration of QDs improves the efficiency of such solar cells by increasing absorption of light in the visible region. Using a better electrolyte than phosphate buffer solution (PBS) such as KI also improves the solar cell efficiency. 5. Finally, we have attempted p-type doping of ZnO NWs using various growth precursors including phosphorus pentoxide, sodium fluoride, and zinc fluoride. We have also attempted to create p-type carriers via introducing interstitial fluorine by annealing ZnO nanostructures in diluted fluorine gas. In brief, we are unable to reproduce the growth of reported p-type ZnO nanostructures. However; we have identified the window of temperature and duration of post-growth annealing of ZnO NWs in dilute fluorine gas which leads to suppression of native defects. This is the first experimental effort on post-growth annealing of ZnO NWs in dilute fluorine gas although this has been suggested by a recent theory for creating p-type semiconductors. In our experiments the defect band peak due to native defects is found to decrease by annealing at 300 °C for 10 – 30 minutes. One of the major future works will be to determine the type of charge carriers in our annealed ZnONWs.

Integration of room temperature single electron transistor with CMOS subsystem

The single electron transistor (SET) is a charge-based device that may complement the dominant metal-oxide-semiconductor field effect transistor (MOSFET) technology. As the cost of scaling MOSFET to smaller dimensions are rising and the the basic functionality of MOSFET is encountering numerous challenges at dimensions smaller than 10nm, the SET has shown the potential to become the next generation device which operates based on the tunneling of electrons. Since the electron transfer mechanism of a SET device is based on the non-dissipative electron tunneling effect, the power consumption of a SET device is extremely low, estimated to be on the order of 10^-18J. The objectives of this research are to demonstrate technologies that would enable the mass produce of SET devices that are operational at room temperature and to integrate these devices on top of an active complementary-MOSFET (CMOS) substrate. To achieve these goals, two fabrication techniques are considered in this work. The Focus Ion Beam (FIB) technique is used to fabricate the islands and the tunnel junctions of the SET device. A Ultra-Violet (UV) light based Nano-Imprint Lithography (NIL) call Step-and-Flash- Imprint Lithography (SFIL) is used to fabricate the interconnections of the SET devices. Combining these two techniques, a full array of SET devices are fabricated on a planar substrate. Test and characterization of the SET devices has shown consistent Coulomb blockade effect, an important single electron characteristic. To realize a room temperature operational SET device that function as a logic device to work along CMOS, it is important to know the device behavior at different temperatures. Based on the theory developed for a single island SET device, a thermal analysis is carried out on the multi-island SET device and the observation of changes in Coulomb blockade effect is presented. The results show that the multi-island SET device operation highly depends on temperature. The important parameters that determine the SET operation is the effective capacitance Ceff and tunneling resistance Rt . These two parameters lead to the tunneling rate of an electron in the SET device, Γ. To obtain an accurate model for SET operation, the effects of the deviation in dimensions, the trap states in the insulation, and the background charge effect have to be taken into consideration. The theoretical and experimental evidence for these non-ideal effects are presented in this work.

Dual energy versus single energy MDCT: measurement of radiation dose using adult abdominal imaging protocols

RATIONALE AND OBJECTIVES: The aim of this study was to measure the radiation dose of dual-energy and single-energy multidetector computed tomographic (CT) imaging using adult liver, renal, and aortic imaging protocols. MATERIALS AND METHODS: Dual-energy CT (DECT) imaging was performed on a conventional 64-detector CT scanner using a software upgrade (Volume Dual Energy) at tube voltages of 140 and 80 kVp (with tube currents of 385 and 675 mA, respectively), with a 0.8-second gantry revolution time in axial mode. Parameters for single-energy CT (SECT) imaging were a tube voltage of 140 kVp, a tube current of 385 mA, a 0.5-second gantry revolution time, helical mode, and pitch of 1.375:1. The volume CT dose index (CTDI(vol)) value displayed on the console for each scan was recorded. Organ doses were measured using metal oxide semiconductor field-effect transistor technology. Effective dose was calculated as the sum of 20 organ doses multiplied by a weighting factor found in International Commission on Radiological Protection Publication 60. Radiation dose saving with virtual noncontrast imaging reconstruction was also determined. RESULTS: The CTDI(vol) values were 49.4 mGy for DECT imaging and 16.2 mGy for SECT imaging. Effective dose ranged from 22.5 to 36.4 mSv for DECT imaging and from 9.4 to 13.8 mSv for SECT imaging. Virtual noncontrast imaging reconstruction reduced the total effective dose of multiphase DECT imaging by 19% to 28%. CONCLUSION: Using the current Volume Dual Energy software, radiation doses with DECT imaging were higher than those with SECT imaging. Substantial radiation dose savings are possible with DECT imaging if virtual noncontrast imaging reconstruction replaces precontrast imaging.

A Compact Tetrathiafulvalene-Benzothiadiazole Dyad and Its Highly Symmetrical Charge-Transfer Salt: Ordered Donor π-Stacks Closely Bound to Their Acceptors

A compact and planar donor–acceptor molecule 1 comprising tetrathiafulvalene (TTF) and benzothiadiazole (BTD) units has been synthesised and experimentally characterised by structural, optical, and electrochemical methods. Solution-processed and thermally evaporated thin films of 1 have also been explored as active materials in organic field-effect transistors (OFETs). For these devices, hole field-effect mobilities of μFE=(1.3±0.5)×10−3 and (2.7±0.4)×10−3 cm2 V s−1 were determined for the solution-processed and thermally evaporated thin films, respectively. An intense intramolecular charge-transfer (ICT) transition at around 495 nm dominates the optical absorption spectrum of the neutral dyad, which also shows a weak emission from its ICT state. The iodine-induced oxidation of 1 leads to a partially oxidised crystalline charge-transfer (CT) salt {(1)2I3}, and eventually also to a fully oxidised compound {1I3}⋅1/2I2. Single crystals of the former CT compound, exhibiting a highly symmetrical crystal structure, reveal a fairly good room temperature electrical conductivity of the order of 2 S cm−1. The one-dimensional spin system bears compactly bonded BTD acceptors (spatial localisation of the LUMO) along its ridge.

Method for electrical evaluation of graphene using a GFET structure

n this work, we explain a method to characterize graphene using electrical measurements in graphene field-effect transistors (GFET) devices. Our goal is to obtain the material electronic properties from the output characteristics of one GFET device. For the previous purpose, we will need to apply a physical model that allows us to correlate the electronic behavior of a GFET with the material properties.

Estudo de transistores de tunelamento induzido por efeito de campo (TFET) construídos em nanofio.

Esse trabalho de mestrado teve como estudo o transistor Túnel-FET (TFET) fabricado em estrutura de nanofio de silício. Este estudo foi feito de forma teórica (simulação numérica) e experimental. Foram estudadas as principais características digitais e analógicas do dispositivo e seu potencial para uso em circuitos integrados avançados para a próxima década. A análise foi feita através da extração experimental e estudo dos principais parâmetros do dispositivo, tais como inclinação de sublimiar, transcondutância (gm), condutância de saída (gd), ganho intrínseco de tensão (AV) e eficiência do transistor. As medidas experimentais foram comparadas com os resultados obtidos pela simulação. Através do uso de diferentes parâmetros de ajuste e modelos de simulação, justificou-se o comportamento do dispositivo observado experimentalmente. Durante a execução deste trabalho estudou-se a influência da escolha do material de fonte no desempenho do dispositivo, bem como o impacto do diâmetro do nanofio nos principais parâmetros analógicos do transistor. Os dispositivos compostos por fonte de SiGe apresentaram valores maiores de gm e gd do que aqueles compostos por fonte de silício. A diferença percentual entre os valores de transcondutância para os diferentes materiais de fonte variou de 43% a 96%, sendo dependente do método utilizado para comparação, e a diferença percentual entre os valores de condutância de saída variou de 38% a 91%. Observou-se também uma degradação no valor de AV com a redução do diâmetro do nanofio. O ganho calculado a partir das medidas experimentais para o dispositivo com diâmetro de 50 nm é aproximadamente 45% menor do que o correspondente ao diâmetro de 110 nm. Adicionalmente estudou-se o impacto do diâmetro considerando diferentes polarizações de porta (VG) e concluiu-se que os TFETs apresentam melhor desempenho para baixos valores de VG (houve uma redução de aproximadamente 88% no valor de AV com o aumento da tensão de porta de 1,25 V para 1,9 V). A sobreposição entre porta e fonte e o perfil de dopantes na junção de tunelamento também foram analisados a fim de compreender qual combinação dessas características resultariam em um melhor desempenho do dispositivo. Observou-se que os melhores resultados estavam associados a um alinhamento entre o eletrodo de porta e a junção entre fonte e canal e a um perfil abrupto de dopantes na junção. Por fim comparou-se a tecnologia MOS com o TFET, obtendo-se como resultado um maior valor de AV (maior do que 40 dB) para o TFET.