Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Design of a fibre-optic disc accelerometer: theory and experiment

Mechanical principles of fibre-optic disc accelerometers (FODA) different from those assumed in previous calculation methods are presented. An FODA with a high sensitivity of 82 rad/ g and a resonance frequency of 360 Hz is designed and tested. In this system, the minimum measurable demodulation phase of the phase-generated carrier (PGC) is 10(-5) rad, and the minimum acceleration reaches 120 ng theoretically. This kind of FODA, with its high responsivity, all-optic-fibre configuration, small size, light weight and stiff shell housing, ensures effective performance in practice.

活性氧自由基与嘧啶碱基及其核苷反应的ESP研究

本文以MNP（2-methyl-2-nitrosopropane）为捕捉剂，利用自旋捕捉技术和ESR方法，室温条件下，研究了活性氧自由基与嘧啶碱基及其核苷在水溶液中的反应。确定了所产生的自由基类别，讨论了自由基的形成机制。在本工作中，我们在下列三种体系中，研究了活性氧自由基与嘧啶碱基及其核苷的反应。1.核黄素（B_2）水溶液中，O_2~-与嘧啶碱基及其核苷的反应。2.H_2O_2水溶液中，OH与嘧啶碱基及其核苷的反应。3.γ射线辐照水溶液过程中，OH与嘧啶碱基及其核苷的反应。在核黄素（B_2）水溶液中，通过U.V.光辐照，我们得到了活性氧自由基与尿嘧啶、胞嘧啶、胞苷、脱氧胞苷、胸腺嘧啶、胸腺核苷反应所产生的自由基，及由这些自由基与MNP自旋加合物的ESR谱。确认了自由基Ⅰ，Ⅱ，Ⅲ，Ⅳ，Ⅴ，Ⅵ的存在。为了判别与嘧啶碱基或嘧啶核苷反应的活性氧自由基的种类，我们在下列三种条件下进行了测试：（1）加入适量DETAPAC（2）通N_2或Ar除O_2；（3）加入H_2O_2酶，均未得到ESR信号。据此，我们排除了O_2~-与嘧啶碱基或嘧啶核革直接反应的可能性。确认与嘧啶碱基或嘧啶核苷发生直接反应的是OH，其形成是Fenton反应的结果。 Fe~(2+) ＋ O_2~- → H_2O_2 ＋ Fe~(3+) （a） Fe~(2+) ＋ H_2O_2 → ·OH ＋ OH~- ＋ Fe~(3+) （b）Fe~(3+) ＋ O_2~- → Fe~(2+)＋O_2 （c）通过Fenton反应，O_2~-转化成·OH，间接与嘧啶或核苷发生了反应。U.V.光照含有MNP和1％H_2O_2的样品水溶液，我们确定了·OH与嘧啶碱基及其核苷反应所产生的自由基Ⅰ，Ⅱ，Ⅲ，Ⅳ，Ⅴ，Ⅵ，Ⅶ，Ⅷ，Ⅸ，Ⅹ。发现，·OH与尿嘧啶及其核苷，胞嘧啶及其核苷的反应，主要有二种形式：其一，·OH加合到嘧啶环的C_5－C_6双键上，形成C_5位或C_6位自由基；其二，·OH夺取C_5位上的H，开成C_5'位自由基。·OH不与胸腺核苷的糖单元发生反应，仅与其嘧啶环反应，形成Nu位和C_5位自基。γ射线辐照过程中，·OH与嘧啶碱基及其核苷的反应与H_2O_2体系中的情况类似。辐照剂量则对反应的影响较大，低于1.0 * 10~4 rad，不发生反应；1.0 * 10~6 rad，则发生交联反应，只有1.0 * 10~5 rad的辐照剂量比较适宜。

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Michelson干涉仪式光纤空气声传感器

介绍了一种用于直升机等低空目标探测的光纤空气声传感器.该传感器基于光纤Michelson干涉仪的原理,结合弹性盘片的应力应变理论分析和光纤粘接的工艺设计,采用相位载波解调技术进行信号解调.对比实验测试验证了这种声音探测技术可行性.传感器理论灵敏度为2.38 rad/Pa,实测灵敏度为1.5 rad/Pa,采用PGC相位解调理论最小可探测的最小声信号为6.7 μPa,即9.5 dB.传感器在20～300 Hz范围内响应基本平坦.结合声音传播规律分析并肯定其在实用中的可行性.

抗辐射128kb PDSOI静态随机存储器

介绍在部分耗尽绝缘体上硅(PD SOI)衬底上形成的抗辐射128kb静态随机存储器.在设计过程中,利用SOI器件所具有的特性,对电路进行精心的设计和层次化版图绘制,通过对关键路径和版图后全芯片的仿真,使得芯片一次流片成功.基于部分耗尽SOI材料本身所具有的抗辐射特性,通过采用存储单元完全体接触技术和H型栅晶体管技术,不仅降低了芯片的功耗,而且提高了芯片的总体抗辐射水平.经过测试,芯片的动态工作电流典型值为20mA@10MHz,抗总剂量率水平达到500krad(Si),瞬态剂量率水平超过2.45×10~(11) rad(Si)/s.这些设计实践必将进一步推动PD SOI CMOS工艺的研发,并为更大规模抗辐射电路的加固设计提供更多经验.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

辐射基因治疗黑色素瘤的实验研究

研究低剂量辐射结合腺病毒(AdCMV)载体介导的p53基因转导对人黑色素瘤A375细胞系基因转移效率和辐射敏感性的影响。用复制缺陷的重组腺病毒载体(AdCMV-p53)介导人p53基因转染1GyX-射线预辐照的A375细胞系,RT-PCR检测mRNA水平,流式细胞仪测定细胞周期阻滞及外源性P53蛋白表达情况,克隆形成率测定辐射后细胞存活率。用携带报道基因的复制缺陷重组腺病毒载体AdCMV-GFP作为对照。实验结果表明,1GyX-射线辐照可较高地增加AdCMV-p53对A375细胞的基因转导效率,转导的外源性野生型p53可在A375(wtp53)细胞中高效表达,并诱导细胞周期G1期阻滞;单纯转导p53对A375细胞无明显诱导凋亡和生长抑制效应;而转导p53后给予X-射线辐射,当剂量达到4Gy及其以上时,48h后AdCMV-p53感染组细胞开始出现明显形态改变,克隆存活率明显低于AdCMV-GFP感染组和未感染组,显示存活曲线下移,4Gy时细胞存活率就减少了1个量级。小剂量辐射既可有效增加AdCMV-p53介导的p53转导,又不会对患者产生明显副作用;转导野生型p53的人黑色素瘤A375细胞系显示P53过表达;过表达的P53蛋白虽然对A375细胞无明显生长抑制及凋亡诱导作用,但可明显增加其辐射敏感性。这表明p53是基因治疗黑色素瘤较好的侯选基因,也为临床上放疗联合基因治疗黑色素瘤提供了实验室依据,即减轻临床上对于辐射敏感性差的肿瘤单纯大剂量照射或单纯基因疗法中rAd-p53制品用量过大而给病人造成的毒副作用。

CSR工程3维测量控制网

主要介绍了兰州重离子加速器冷却储存环CSR控制网的建立及测量分析方法,详细说明了激光跟踪仪转站原理和计算机算法。根据一般大地测量采取的建网原则,首先用全站仪建立了初级控制网,在此基础上加密形成了由168个网点构成的主环控制网;然后运用激光跟踪仪及其配套软件测量了主环控制网,其网点的点位精度可达到0.08 mm。应用2005年3月控制网的测量结果对主环磁铁进行了调节,结果显示四极铁横向就位精度达到0.15 mm,偏转角精度达到0.3 m rad。

黄土区参考作物蒸散量多种计算方法的比较研究

参考作物蒸散量的计算公式大多存在地域性限制,分析其应用情况能够反映这些公式在中国部分地区的应用前景。该文根据1996～2000年陕西省榆林、延安与西安三站的逐日气象资料,以FAO推荐的Penman-Monteith方法为标准,对计算参考作物蒸散量的10种方法进行比较。线性回归,平方根误差与平均偏差方法检验的结果显示:Penman系列方法之间关系密切,Kimberly PM-72方法最好。不同方法之间在夏季的差异较大,春秋季较小。在需要数据较少的方法中Priestley-Taylor方法接近Penman-Monteith方法。FAO-Rad、FAO-BC、Hargreaves与Makkink 4种方法与其差异明显,而且存在地域差异。在本区应用这些方法时需要对其参数进行适当调整,以适应当地的气象条件。

苯肾上腺素诱导乳鼠心肌细胞蛋白质表达变化的蛋白质组分析

α1-肾上腺素受体(α1-Adrenergic receptor,α1-AR)是G蛋白偶联受体(G-protein coupled receptor,GPCR),也是内源性儿茶酚胺、去甲肾上腺素和肾上腺素最重要的靶受体之一.α1-AR广泛分布于机体的各种器官、组织和细胞中,并介导多种生理效应,如血管收缩、蛋白质合成及心脏变力变时作用等[1,2].很多研究已经证实,α1-AR及其信号转导通路与许多心血管疾病存在密切关系[3,4].蛋白质组学可提供一种发现在疾病情况下异常表达蛋白质的方法,为疾病的早期诊断和愈后判断提供指南,并为针对性疾病治疗提供科学依据.本研究以乳鼠心肌细胞为实验模型,利用双向凝胶电泳和飞行时间质谱分析苯肾上腺素诱导乳鼠心肌细胞表达变化的蛋白质.1实验部分1.1试剂苯肾上腺素(Phenylephine,PE)购自Sigma公司;胰蛋白酶和DMEM购自Hyclone公司;IPG预制胶条(pH=5~8,胶条长17 cm),载体两性电解质(B io-Lyte5-8)购于B io-Rad公司;TPCK修饰的测序级胰酶购自Promega公司;其它试剂均为国产分析纯.1.2实验过程(1)乳鼠心肌细胞培养及样...

人卵巢癌耐药细胞株的比较蛋白质组分析

卵巢癌是妇科疾病中仅次于宫颈癌和子宫内膜癌的常见肿瘤,死亡率较高[1].该肿瘤治疗失败的主要原因之一是复发后的肿瘤细胞凋亡抵抗机制导致化疗的耐药性.在卵巢癌的化疗中顺铂是主要使用的药物之一,但由于细胞多药耐药性的产生严重限制了其疗效的发挥[2].蛋白质组学是在蛋白水平上对整个器官、细胞或组织的基因组所表达的全部蛋白质进行总体分析,双向凝胶电泳和质谱技术则是研究蛋白质组学的核心技术.为探索与耐药相关的蛋白质,本文采用高分辨二维凝胶电泳分离技术对人卵巢癌细胞株COC1及其耐药细胞株COC1/DDP中的蛋白质进行分离和差异表达分析,应用基质辅助激光解吸电离-飞行时间质谱对酶解多肽进行测定[即测定蛋白质的肽质量指纹图(Peptide massfingerprinting,PMF)],并通过相应的数据库搜索来鉴定蛋白质.为获得更准确的检索结果,采用串联质谱技术对各肽段进行氨基酸测序,并应用IPI-HUMAN数据库对上述检索结果进一步加以确认.1实验部分1.1试剂IPG预制胶条(pH 3~10,17 cm)、载体两性电解质和矿物油(M ineral O il)均购自美国B io-Rad公司.Urea、蔗糖、G lycer...

朝鲜淫羊藿中生物碱类新成分的分离提取及结构鉴定

淫羊藿系小檗科淫羊藿属植物 ,具有补肾壮阳、强筋骨、祛风湿之功效 .现代药理研究表明 ,它还具有防治骨质疏松和提高免疫功能等作用 .2 0 0 0年版中国药典收载了 5种淫羊藿属植物 ,朝鲜淫羊藿为其中一种 ,是长白山道地中药材之一 .朝鲜淫羊藿中化学成分的研究多集中在黄酮类化合物方面 [1～ 6 ] ,而对其生物碱类化合物的研究较少 [7,8] .本文对朝鲜淫羊藿中生物碱类化合物进行了研究 ,并发现了一种新的生物碱 (6-羟基 -1 1 ,1 2 -二甲氧基 -2 ,2 -二甲基 -1 ,8-二氧 -1 ,3 ,4,8-四氢 -2 H -7-氧杂 -2 -氮 -苯并 [c]菲 ) ,采用核磁共振波谱技术鉴定了该化合物的结构 ,并用电喷雾多级串联质谱对其结构的正确性进行了验证 .1　实验部分1 .1　仪器　APEX FT-ICRMS高分辨质谱仪 (德国 Bruker Daltonnics公司 ) ;FTS-7型红外光谱仪(美国 BIO-RAD公司 ) ;AV40 0核磁共振波谱仪 (德国 Bruker公司 ) ,以 CDCl3作溶剂及内标 ;X-4数字显示显微熔点仪 (北京泰克仪器有限公司 ) ;MSn在 ...