不同腔结构下的声光调Q双包层光纤激光器特性研究

报道了半导体激光器端面抽运不同结构的声光调Q的双包层光纤激光器的脉冲输出特性.对前向、后向不同抽运方式的掺镱调Q双包层光纤激光器在输出平均功率,调Q脉冲宽度及脉冲稳定性进行了对比及讨论;其中后向抽运的光纤激光器,在10kHz重复频率调制下,获得了斜效率为60%的平均功率输出,其脉冲宽度为52ns,单脉冲能量为0·3mJ.最后利用不同抽运方式下的速率方程,理论分析调Q脉冲的特性,分析结果与实验相符.

激光二极管连续抽运电光调Q Nd：YVO4激光器

报道了全固态激光器连续抽运高重复率电光调Q的实验和理论分析结果。用LGS（La3Ga5SiO14）晶体作电光调Q元件，在激光二极管（LD）端面抽运Nd：YVO4激光器中实现了较高重复率的电光调Q输出。实验中在10^4Hz重复率下，抽运功率为28w时，平均功率超过5W，脉冲宽度为7ns，峰值功率为70kW，并对不同重复率时的脉冲输出进行了比较，在低重复率下，脉宽〈6．5ns，峰值功率超过100kW。在理论上，通过对连续抽运时的电光调Q速率方程进行修正，并考虑放大自发辐射（ASE）的影响，对调Q激光器的储能过

输出5W的电光调Q Nd：YAG陶瓷激光器

研究了激光二极管（LD）侧向抽运的Nd：YAG陶瓷电光调Q激光器的激光输出特性。该激光器采用九组激光二极管线阵列（LDA）侧面紧密环绕均匀排布的抽运结构，并用微通道热汇冷却技术冷却。在电光调Q方式下，重复频率为100Hz，抽运单脉冲能量为416mJ时，用尺寸为庐5mm×75mm，掺杂原子数分数为1％的Nd：YAG陶瓷棒，获得50mJ的1064nm激光输出，脉冲宽度为12ns，斜率效率达24％。并实验测量和分析了偏振片，KD^＊P晶体，四分之一波片等调Q器件的插入损耗。测量了输出激光时间波形和光斑的光强空间

激光二极管侧面抽运调Q倍频Nd:YAG激光器

对高平均功率输出的激光二极管侧面抽运电光调Q倍频 Nd:YAG激光器进行了研究，当采用90个60W的脉冲激光二极管阵列抽运时，在重复频率为10Hz下，实现了最大平均功率为1180mW的1064nm红外激光输出，光-光转换效率为11%。腔外倍频获得600mW的532nm绿光输出，倍频效率达到50%以上。

A planar waveguide Nd : YAG laser using active Q-switching of a hybrid unstable resonator

A planar waveguide laser operating in a negative branch unstable resonator is Q-switched by an acoustooptic mod latorin anew configuration, providing effective, high-speed switching. The laser using a 200-mu m Nd:YAG core, face pumped by 10 laser diode bars, has produced 100-W output in a good beam quality at 100-kHz pulse rate, and 4.5 mJ at lower frequency with 15-ns pulse duration.

双调Q开关热退偏补偿全固态激光器

为了有效地补偿激光二极管(LD)侧向抽运1000 Hz重复率电光调Q Nd:YAG激光器棒状增益介质内存在的热致双折射损耗，设计了一种新颖的双调Q晶体开关复合谐振腔结构。实验结果表明，设计的双调Q晶体开关结构Nd:YAG激光器输出激光脉冲能量比单调Q晶体开关结构的非补偿腔输出能量提高了56%，当侧面抽运半导体激光器输出功率达到450 W时，激光输出达到30 mJ/pulse，输出光束偏振度优于10:1，激光脉冲宽度约14 ns。并获得6.7%的光-光转换效率。通过对双调Q开光激光谐振腔进行建模，并用求解速

采用国产双包层光纤的声光调Q激光器

实验报道采用我国自行设计的大模场掺镱双包层光纤，利用简单声光调Q装置，成功实现调Q运转；在1－50kHz调制频率下获得了百纳秒的调Q脉冲，其输出光束质量因子大约为2。当重复频率为1kHz时，获得了脉冲宽度为132ns，能量0.93mJ。同时实验中观察到的调Q脉冲常出现一点锁模现象，针对这一现象进行了讨论。

A Q-swicthed all-solid-state single-longitudinal-mode laser with adjustable pulse-width and high repetition rate

A single-longitudinal-mode (SLM) laser-diode pumped Nd: YAG laser with adjustable pulse width is developed by using the techniques of pre-lasing and changing polarization of birefingent crystal. The Q-switching voltage is triggered by the peak of the pre-lasing pulse to achieve the higher stability of output pulse energy. The output energy of more than 1 mJ is obtained with output energy stability of 3% (rms) at 100 Hz. The pulse-width can be adjusted from 30 ns to 300 ns by changing the Q-switching voltage. The probability of putting out single-longitudinal-mode pulses is almost 100%. The laser can be run over four hours continually without mode hopping.

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质研究

研究了Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质．三种Er2O3掺杂浓度的激光实验结果表明，在Er2O3名义掺杂浓度为0．5wt％时，玻璃的综合激光性质最好，重复频率为0．1Hz时，它的激光阈值功率为14．5mJ，最大输出能量为9．6mJ，斜率效率为0．55％．在同种实验条件下，比较了Cr14和Kigre公司生产的QE-7S激光性质参数，实验表明，前者激光阈值功率稍低，而后者的斜率效率和最大输出功率略高．

Cr,Yb:YAG晶体的自调Q激光性能

用光纤耦合激光二极管抽运Cr,Yb:YAG晶体获得了1.03 μm的自调Q激光输出,输出的调Q脉冲非常稳定,抽运阈值功率为680 mW,脉冲宽度为3.3 ns,获得的平均功率为156 mW,斜率效率为18.5%。随着抽运功率的增大,重复频率成线性增长,而脉宽略有减少,单脉冲能量和峰值功率都始终呈增大趋势。光束质量因子M2为1.17。

激光二极管抽运Na，Yb共掺CaF2晶体自调Q激光特性的研究

利用激光二极管（LD）抽运新型Na．Yb共掺CaF2（Na．Yb：CaF2）晶体，获得了1．05μm的自调Q激光输出。利用透射率1％的耦合输出镜，得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2％的输出镜条件下，得到最大输出激光功率为390mw，此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系，随着抽运功率的增加，自调Q脉冲的周期和宽度呈指数衰减。同时，还采用单棱镜进行光谱调谐实验，获得了1036～1059nm的自调Q激光调谐输出。

Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.