Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].

Temperature dependence of the Fermi level in low-temperature-grown GaAs

A variable-temperature reflectance difference spectroscopy study of GaAs grown by molecular beam epitaxy at low-temperature GaAs (LT-GaAs) shows that the Fermi level is mostly determined by the point defects in samples annealed at below 600 degrees C and can be shifted by photoquenching the defects. The Fermi level is otherwise almost temperature independent, leading to an estimated width of the defect band of 150 meV in the as-grown sample, For LT-GaAs annealed at 850 degrees C, the Fermi level is firmly pinned, most Likely by the As precipitates. (C) 1998 American Institute of Physics.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

Low-temperature relaxation of polymers around doped dyes studied by persistent spectral hole burning

Persistent spectral hole burning spectroscopy is applied to evaluate the low-temperature relaxation around the dye molecules doped in several types of polymers. The doped dye is tetraphenylporphine, and the measured polymers are vinyl polymers and main chain aromatic polymers. The changes of microscopic environments around the dye are evaluated from the changes in the hole profiles during temperature cycling experiments. The relaxation behavior of the polymers is discussed in relation to their chemical structures. (C) 1999 John Wiley & Sons, Inc.

Low-temperature molten salt synthesis and characterization of CoWO4 nano-particles

CoWO4 nano-particles were successfully synthesized at a low temperature of 270 degrees C by a molten salt method, and effects of such processing parameters as holding time and salt quantity on the crystallization and development Of CoWO4 crystallites were initially studied. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM). and photoluminescent spectra techniques (PL), respectively. Experimental results showed that the well-crystallized CoWO4 nano-particles with ca. 45 nm in diameter could be obtained at 270 degrees C for a holding time of 8 h with 6:1 mass ratio of the salt to CoWO4 precursor, and XRD analysis evidenced that the as-prepared sample was a pure monoclinic phase Of CoWO4 with wolframite structure. Their PL spectra revealed that the CoWO4 nano-particles displayed a very strong PL peak at 453 nm with the excitation wavelength of 230 nm, and PL properties of CoWO4 crystallites relied on their crystalline state, especially on their particle size. (C) 2009 Elsevier B.V. All rights reserved.

Low temperature crystal structures of two rhodanine derivatives, 3-amino rhodanine and 3-methyl rhodanine: geometry of the rhodanine ring

Rhodanines (2-thio-4-oxothiazolidines) are synthetic small molecular weight organic molecules with diverse applications in biochemistry, medicinal chemistry, photochemistry, coordination chemistry and industry. The X-ray crystal structure determination of two rhodanine derivatives, namely (I), 3-aminorhodanine [3-amino-2-thio-4-oxothiazolidine], C3H4N2OS2, and (II) 3-methylrhodanine [3-methyl-2-thio-4-oxothiazolidine], C4H5NOS2, have been conducted at 100 K. I crystallizes in the monoclinic space group P2(1)/n with unit cell parameters a = 9.662(2), b = 9.234(2), c = 13.384(2) angstrom, beta = 105.425(3)degrees, V = 1151.1(3) angstrom(3), Z = 8 (2 independent molecules per asymmetric unit), density (calculated) = 1.710 mg/m(3), absorption coefficient = 0.815 mm(-1). II crystallizes in the orthorhombic space group Iba2 with unit cell a = 20.117(4), b = 23.449(5), c = 7.852(2) angstrom, V = 3703.9(12) angstrom(3), Z = 24 (three independent molecules per asymmetric unit), density (calculated) = 1.584 mg/m(3), absorption coefficient 0.755 mm(-1). For I in the final refinement cycle the data/restraints/parameter ratios were 2639/0/161, goodness-of-fit on F-2 = 0.934, final R indices [I > 2sigma(I)] were R1 = 0.0299, wR2 = 0.0545 and R indices (all data) R1 = 0.0399, wR2 = 0.0568. The largest difference peak and hole were 0.402 and -0.259 e angstrom(-3). For II in the final refinement cycle the data/restraints/parameter ratios were 3372/1/221, goodness-of-fit on F(2) = 0.950, final R indices [I > 2sigma(I)] were R1 = 0.0407, wR2 = 0.1048 and R indices (all data) R1 = 0.0450, wR2 = 0.1088. The absolute structure parameter = 0.19(9) and largest difference peak and hole 0.934 and -0.301 e angstrom(-3). Details of the geometry of the five molecules (two for I and three for II) and the crystal structures are fully discussed. Corresponding features of the molecular geometry are highly consistent and firmly establish the geometry of the rhodanine

Neutral gas depletion mechanisms in dense low-temperature argon plasmas

Neutral gas depletion mechanisms are investigated in a dense low-temperature argon plasma-an inductively coupled magnetic neutral loop (NL) discharge. Gas temperatures are deduced from the Doppler profile of the 772.38 nm line absorbed by argon metastable atoms. Electron density and temperature measurements reveal that at pressures below 0.1 Pa, relatively high degrees of ionization (exceeding 1%) result in electron pressures, p(e) = kT(e)n(e), exceeding the neutral gas pressure. In this regime, neutral dynamics has to be taken into account and depletion through comparatively high ionization rates becomes important. This additional depletion mechanism can be spatially separated due to non-uniform electron temperature and density profiles (non-uniform ionization rate), while the gas temperature is rather uniform within the discharge region. Spatial profiles of the depletion of metastable argon atoms in the NL region are observed by laser induced fluorescence spectroscopy. In this region, the depletion of ground state argon atoms is expected to be even more pronounced since in the investigated high electron density regime the ratio of metastable and ground state argon atom densities is governed by the electron temperature, which peaks in the NL region. This neutral gas depletion is attributed to a high ionization rate in the NL zone and fast ion loss through ambipolar diffusion along the magnetic field lines. This is totally different from what is observed at pressures above 10 Pa where the degree of ionization is relatively low (

Non-invasive VHF monitoring of low-temperature atmospheric pressure plasma

A real-time VHF swept frequency (20–300 MHz) reflectometry measurement for radio-frequency capacitive-coupled atmospheric pressure plasmas is described. The measurement is scalar, non-invasive and deployed on the main power line of the plasma chamber. The purpose of this VHF signal injection is to remotely interrogate in real-time the frequency reflection properties of plasma. The information obtained is used for remote monitoring of high-value atmospheric plasma processing. Measurements are performed under varying gas feed (helium mixed with 0–2% oxygen) and power conditions (0–40 W) on two contrasting reactors. The first is a classical parallel-plate chamber driven at 16 MHz with well-defined electrical grounding but limited optical access and the second is a cross-field plasma jet driven at 13.56 MHz with open optical access but with poor electrical shielding of the driven electrode. The electrical measurements are modelled using a lumped element electrical circuit to provide an estimate of power dissipated in the plasma as a function of gas and applied power. The performances of both reactors are evaluated against each other. The scalar measurements reveal that 0.1% oxygen admixture in helium plasma can be detected. The equivalent electrical model indicates that the current density between the parallel-plate reactor is of the order of 8–20 mA cm-2 . This value is in accord with 0.03 A cm-2 values reported by Park et al (2001 J. Appl. Phys. 89 20–8). The current density of the cross-field plasma jet electrodes is found to be 20 times higher. When the cross-field plasma jet unshielded electrode area is factored into the current density estimation, the resultant current density agrees with the parallel-plate reactor. This indicates that the unshielded reactor radiates electromagnetic energy into free space and so acts as a plasma antenna.

Three dimensional number density mapping in the plume of a low temperature laser ablated magnesium plasma

Simultaneous optical absorption and laser-induced fluorescence measurements have been used to map the three-dimensional number densities of ground-state ions and neutrals within a low-temperature KrF laser-produced magnesium plasma expanding into vacuum. Data is reported for the symmetry plane of the plasma, which includes the laser interaction point at a delay of 1 μs after the ∼30 ns KrF laser ablation pulse and for a laser fluence of 2 J cm−2 on target. The number density distributions of ion and neutral species within this plane indicate that two distinct regions exist within the plume; one is a fast component containing ions and neutrals at maximum densities of ∼3×1013 cm−3 and ∼4×1012 cm−3, respectively and the second is a high-density region containing slow neutral species, at densities up to ∼1×1015 cm−3.

Two-dimensional imaging of low temperature laser produced plasmas

Laser induced fluorescence images of a low temperature laser-produced plasma expanding into vacuum are presented and compared to a computer simulation. The complex nature of a plume expanding into background gas is highlighted, along with a potential means of simplifying the study of such systems.