DISTRIBUTION FUNCTION OF A DRIFTING ELECTRON-GAS FOR GENERAL ENERGY-BAND STRUCTURES

The usual application of the Lei-Ting balance equation method for treating electron transport problems makes use of a Fermi distribution function for the electron motion relative to the center of mass. It is pointed out that this presumes the existence of a moving frame of reference that is dynamically equivalent to the rest frame of reference, and this is only true for electrons with a constant effective mass. The method is thus inapplicable to problems where electrons governed by a general energy-band dispersion E(k) are important (such as in miniband conduction). It is demonstrated that this difficulty can be overcome by introducing a distribution function for a drifting electron gas by maximizing the entropy subject to a prescribed average drift velocity. The distribution function reduces directly to the usual Fermi distribution for electron motion relative to the center of mass in the special case of E(k)=($) over bar h(2)\k\(2)/2m*. This maximum entropy treatment of a drifting electron gas provides a physically more direct as well as a more general basis for the application of the balance equation method.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation. In comparison with the K-promoted nitridation of the InP(110) surface obtained by cleavage in situ, we found that the promotive effect for the InP(100) surface cleaned by ions bombardment is much stronger and that the nitridation products consist of two kinds of complexes: InPNx and InPNx+y. The results confirmed that surface defects play an important part in the promotive effect. Furthermore, in contrast with K-promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100). (C) 1995 American Vacuum Society.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION OF INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Multi-quasiparticle gamma-band structure in neutron-deficient Ce and Nd isotopes

The newly developed multi-quasiparticle triaxial projected shell model approach is employed to study the high-spin band structures in neutron-deficient even-even Ce- and Nd-isotopes. It is observed that gamma-bands are built on each intrinsic configuration of the triaxial mean-field deformation. Due to the fact that a triaxial configuration is a superposition of several K-states, the projection from these states results in several low-lying bands originating from the same intrinsic configuration. This generalizes the well-known concept of the surface gamma-oscillation in deformed nuclei based on the ground-state to gamma-bands built on multi-quasiparticle configurations. This new feature provides an alternative explanation on the observation of two I = 10 aligning states in Ce-134 and both exhibiting a neutron character. (C) 2009 Elsevier B.V. All rights reserved.

Two-quasiparticle K-isomeric states in strongly deformed neutron-rich Nd and Sm isotopes: a projected shell-model analysis

Motivated by recent spectroscopy data from fission experiments, we apply the projected shell model to study systematically the structure of strongly deformed, neutron-rich, even-even Nd and Sm isotopes with neutron number from 94 to 100. We perform calculations for rotational bands up to spin I = 20 and analyze the band structure of low-lying states with quasiparticle excitations, with emphasis given to rotational bands based on various negative-parity two-quasiparticle (2-qp) isomers. Experimentally known isomers in these isotopes are described well. The calculations further predict proton 2-qp bands based on a 5(-) and a 7(-) isomer and neutron 2-qp bands based on a 4(-) and an 8(-) isomer. The properties for the yrast line are discussed, and quantities to test the predictions are suggested for future experiment.

Copper phthalocyanine on InSb(111)A?interface bonding, growth mode and energy band alignment

Copper phthalocyanine on InSb(111)A?interface bonding, growth mode and energy band alignment, D.A. Evans, H.J. Steiner, S. Evans, R. Middleton, T.S. Jones, S. Park, T.U. Kampen, D.R.T. Zahn, G. Cabailh and I.T. McGovern, J. Phys.: Condens. Matter, 15, S2729?S2740, (2003)

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

Sponsorship: EPSRC, STFC

Electrons in feldspar II: a consideration of the influence of conduction band-tail states on luminescence processes

Poolton, Nigel; Ozanyan, K.B.; Wallinga, J.; Murray, A.S., (2002) 'Electrons in feldspar II: a consideration of the influence of conduction band-tail states on luminescence processes', Physics and Chemistry of Minerals 29(3) pp.217-225 RAE2008

Photodiodes array as potential diagnostic for measuring short bursts of K-alpha radiation from Ti targets irradiated with 45 fs laser pulses

We report on a study comparing absolute K-alpha yield from Ti foils measured with a calibrated system of an X-ray CCD coupled to a curved LiF Von-Hamos crystal spectrometer to the difference in the signals measured simultaneously with two similar photodiodes fitted with two different filters. Our data indicate that a combination of photodiodes with different filters could be developed into an alternative and inexpensive diagnostic for monitoring single shot pulsed emission in a narrow band of X-ray region.

Miniaturization of electromagnetic band gap structures for mobile applications

It is well known that interference of the human body affects the performance of the antennas in mobile phone handsets. In this contribution, we investigate the use of miniaturized metallodielectric electromagnetic band gap (MEBG) structures embedded in the case of a mobile handset as a means of decoupling the antenna from the user's hand. The closely coupled MEBG concept is employed to achieve miniaturization of the order of 15:1. Full wave dispersion relations for planar closely coupled MEBG arrays are presented and are validated experimentally. The performance of a prototype handset with an embedded conformal MEBG is assessed experimentally and is compared to a similar prototype without the MEBG. Reduction in the detuning of the antenna because of the human hand by virtue of the MEBG is demonstrated. Moreover, the efficiency of the handset when loaded with a human hand model is shown to improve when the MEBG is in place. The improvements are attributed to the decoupling of the antenna from the user's hand, which is achieved by means of suppressing the fields in the locality of the hand.