866 resultados para Electrochemical impedance spectroscopy
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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A careful analysis of the impedance response of SnO2 thick films under vacuum and air atmosphere is reported in the present work. The AC electrical resistance was analyzed and it was shown that it is highly frequency dependent. Different models and its equivalent circuit representation were proposed and carefully analyzed based on the microstructure features of the device. Basically, an interpretation of the frequency dependent resistance was proposed based on the fact that different grains characteristics and junctions exist. These different grains and junctions are the main source of resistance dependent feature. An equivalent circuit model, considering different grain sizes associated with different grain boundary junctions characteristics, was introduced so that a consistent interpretation of the results was possible.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The electrochemical behavior of SnO2-SbOx, based electrodes, with and without the addition of RuO2, was studied by cyclic voltammetry, service life measurements and electrochemical impedance spectroscopy in 0.5 M H2SO4 the physical characteristics of these materials were investigated using SEM, EDX and XRD. The resulting cyclic voltammograms obtained using SnO2-SbOx, and SnO2-SbOx-RuO2(x), x = 30, 5, 1 and 0.4 % showed that the OER overpotential decreased with the addition of RuO2. In the repetitive triangular potential voltammetry applied to the SnO2 electrode without and with RuO2 (1%), a higher anodic current is observed during the first potential scan; it is explained in terms of the oxidation of the Ti substrate. The addition of 1% RuO2 increased the service life from 8 to 20 hours at 10 mAcm(-2), while at 50 mAcm(-2) this increase was from 1 to 8 hours. AC Impedance diagrams obtained for the Ti/SnO2-SbOx and Ti/SnO2-SbOx-RuO2 electrodes at the rest potential and at a potential in the OER region can be explained by a single equivalent circuit containing two elements in series. The results showed that the charge transfer resistance and the resistance of the oxide film are lower in the oxide film containing RuO2. Surface analysis of Ti/SnO2-SbOx, revealed that it is relatively porous and formed by clusters of small particles. The Ti/SnO2-SbOx-RuO2 (1%) film is more compact, though. XRD analysis showed that a Sn1-xTixO2 oxide is formed on the Ti/SnO2-SbOx with 1% and without RuO2 electrodes.
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The electrochemical behavior of metallic chromium in aqueous solutions containing chloride ions at different pH was studied by means of open-circuit potential vs. time measurements, cyclic voltammetry and electrochemical impedance spectroscopy. The composition of the surface oxides was analyzed by XPS. For solutions with pH<3 the formation of a passive layer occurs via a dissolution/precipitation process while for pH>3 the mechanism changes. XPS analysis revealed that Cr2O3 basically constitutes the passive layer.
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Understanding the microscopic origin of the dielectric properties of disordered materials has been a challenge for many years, especially in the case of samples with more than one phase. For polar dielectrics, for instance, the Lepienski approach has indicated that the random free energy barrier model of Dyre must be extended. Here we analyse the dielectric properties of a polymer blend made up with the semiconducting poly(o-methoxyaniline) and poly( vinylidene fluoride-trifluorethylene) POMA/P(VDF-TrFE), and of a hybrid composite of POMA/P(VDF-TrFE)/Zn2SiO4:Mn. For the blend, the Lepienski model, which takes into account the rotation or stretching of electric dipoles, provided excellent fitting to the ac impedance data. Because two phases had to be assumed for the hybrid composite, we had to extend the Lepienski model to fit the data, by incorporating a second transport mechanism. The two mechanisms were associated with the electronic transport in the polymeric matrix and with transport at the interfaces between Zn2SiO4: Mn microparticles and the polymeric matrix, with the relative importance of the interfacial component increasing with the percentage of Zn2SiO4: Mn in the composite. The analysis of impedance data at various temperatures led to a prediction of the theoretical model of a change in morphology at 190 +/- 40 K, and this was confirmed experimentally with a differential scanning calorimetry experiment.
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A sensor was fashioned to monitor the volume of nutrient in a solid substrate-based growth media by using electrochemical admittance spectroscopy. Several experimental parameters were investigated (i.e. The use of two- or three-electrode cells, the superficial area of the electrode, the amount of nutrient solution added to the growth media, and the influence of varying the dc and ac potential) to assess how these variables affect the admittance of the system. A linear correlation was observed between the maximum of the imaginary admittance and the volume of nutrient present. The response factor was 2.8 x 10(-5) S cm(-2) ml(-1) and the limit of detection (LOD) was 0.54 ml. The humidity of the growth media does not change the response of the nutrient toward the monitoring measurements. These results demonstrate that the volume of nutrient in this solid substrate-based growth media can be assessed using a ceramic sensor to measure the imaginary admittance. (C) 2002 Elsevier B.V. B.V. All rights reserved.
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This paper reports a study of influence of Cr concentration on the electrical properties and microstructure of SnO2-based powders doped with Mn and Nb, prepared by an organic route (Pechini method). All the samples were compacted into discs and sintered at 1300 degrees C for 3h, resulting in ceramics with relative density varying between 78% and 98%. The powders were characterized by X-ray diffraction analysis. Impedance spectroscopy characterization indicated that the conductivity decreases as Cr concentration increases, probably due to Cr segregation at grain boundaries, which reduces grain size, increasing the number of resistive boundaries.
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The dielectric permittivity of Na0.80K0.20NbO3 ceramic was investigated by impedance spectroscopy. The dielectric characterization was performed from room temperature to 800 degreesC, in the frequency range 5 Hz-13 MHz. The bulk permittivity was derived by the variation of the imaginary part of the impedance as a function of reciprocal angular frequency. The permittivity values as a function of temperature showed two maxima. The first maximum is very similar at 200degreesC and the second one positioned at around 400degreesC, which was associated to Curie's temperature. The evolution of the complex permittivity as a function of frequency and temperature was investigated. At low frequency dispersion was investigated in terms of dielectric loss. The Na0.80K0.20NbO3 showed a dissipation factor between 5 and 40 over a frequency range from 1 to 10(2) kHz. (C) 2002 Elsevier B.V. B.V. All rights reserved.
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The electrical properties of tin oxide varistors doped with CoO, Nb2O5 and Cr2O3, were investigated using the impedance spectroscopy technique with the temperature ranging from 25 to 400 degrees C. The impedance data, represented by means of Nyquist diagrams, show two time constants with different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. The Arrhenius plots show two slopes with a turnover at 200 degrees C for both the higher and lower frequency time constants. This behavior can be related with the decrease of minor charge carrier density. The barrier formation mechanism was associated with the presence of Cr-Sn at the surface, which promotes the adsorption of the O' and O species which are in turn proposed as being responsible for the barrier formation. (C) 1998 American Institute of Physics. [S0021-8979(98)04719-7]
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The electrochemical behavior of the annealed Cu-5wt.%Ni alloy in 0.5 M H2SO4 was studied by means of open-circuit potential (E-OCP) measurements, cyclic voltammetry, electrochemical impedance spectroscopy (EIS), and quasi-stationary linear potential sweep. The hydrodynamics of the system was also studied. This material is constituted by a single a, phase. The anodic behavior of a Cu-Ni alloy in H2SO4 consists fundamentally on the electrodissolution of Cu, its main component, and the formation of a sulfur-containing passive layer. The presence of Ni decreases the rate of Cu oxidation, mostly at high positive potentials. The impedance spectra, obtained for the unrotating electrode, can be interpreted in terms of a simple charge-transfer reaction across a surface layer. When the electrode is rotated, the occurrence of an inductive loop evidenced the existence of an adsorbed layer. All the resistance estimated from the proposed equivalent circuits diminished with the electrode rotation rate, emphasizing the influence of ion transport in the overall electrode process. The system presented two anodic Tafel slopes: 40 mV dec(-1) for E < 255 mV and 67 mV dec(-1) for E > 275 mV. A Tafel slope of 40 mV dec(-1) evidences that copper dissolution can be interpreted in terms of the mechanism proposed by Mattsson and Bockris. The second Tafel suggests that at potentials more positive than 275 mV, copper dissolves according to a mechanism that considers the disproportionation of adsorbed Cu(1) species. (C) 2003 Elsevier Ltd. All rights reserved.
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The electrochemical behavior of Cu-xAl alloys, with 11 wt%less than or equal to x less than or equal to 15wt%, in 0.5 M H2SO4 was studied by means of open-circuit potential decay measurements, quasi-stationary and fast cyclic voltammetry, and electrochemical impedance spectroscopy. Some of the alloys (x less than or equal to 14%), when quenched formed martensitic structures. Alloys with greater than or equal to 13% showed a little square-shaped phase when quenched from temperatures around 800 degrees C. It was observed that in sulfuric medium, these formations were dealuminized differently than the martensitic phase. The values of the rest potentials are more influenced by the heat treatment rather than by the alloy composition. An anodic Tafel slope of ca. 60 mV/decade was observed for all the alloys, independently of the heat treatment. This is explained in terms of a competition between two processes: copper oxidation and copper(I) deproportionation. In the cyclic voltammetric experiments it was observed an anodic current peak, related with copper oxidation with a possible formation of some interfacial species, and a cathodic current peak during the reverse potential scan, associated with the reduction of soluble species and/or of the film. The AC Impedance data were interpreted in terms of electric equivalent circuits.
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SnO2:m mol% CoO (0.5 less than or equal to m less than or equal to 6.0) ceramic specimens were studied by impedance spectroscopy in the 5 Hz-13 MHz frequency range during heating cold-pressed specimens from room temperature to 1250 degrees C. The electrical resistivity during sintering decreases from 4 to 6 orders of magnitude in the 400-1500 K temperature range depending on the amount of CoO. An increase in electrical resistivity in the 570-670 K range is related to the release of adsorbed water. The results for the 970-1500 K show that the higher the amount of the CoO addition, the lower is the temperature at which SnO2:CoO reaches a minimum electrical resistivity. This suggests that oxygen point defects created by dissolution of cobalt ions in the SnO2 lattice are controlling the densification rate of these ceramics.
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The electrochemical behavior of a coating of cobalt oxide on cold-rolled steel in alkaline sodium sulfate was Studied using the electrochemical techniques of open-circuit potential measurements and electrochemical impedance spectroscopy. The coating was prepared at different annealing temperatures ranging from 350 to 750 degreesC and characterized by SEM, EDX and XRD. Below 550 degreesC the composition of the coating was basically of Co3O4. At 750 degreesC CoO was formed and big cracks appeared on the film exposing an inner layer of iron oxides. Analysis of the EIS data is very difficult because of the complexity of the interface structure. It can be inferred that the charge transfer resistance of the coatings prepared at 350 and 450 C were higher than those for the coatings prepared at temperatures above 550 degreesC. (C) 2002 Published by Elsevier B.V. Ltd.