Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Point defects in III-V compound semiconductors

Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The formation energies of vacancies in compound semiconductors can be obtained by this calculation. A practical technique established on this model has been utilized for measuring the stoichiometry in GaAs. The relationship between stoichiometry and deep level centers in GaAs was also investigated.

Reliable concentrated photovoltaic system with compound concentrator

Concentrated photovoltaic systems (CPVSs) draw more and more attention because of high photovoltaic conversion efficiency, low consumption of solar cell, and low cost of power generation. However, the fallibility of the tracker in such systems has hindered their practical application for more than twenty years. The tracker is indispensable for a CPVS since only normal-incident sunlight can be focused on the solar cell chips, even a slight deviation of incident light will result in a significant loss of solar radiation, and hence a distinct decrease in electricity output. Generally, the more accurate the tracker is, the more reliable the system is. However, it is not exactly the case for a CPVS reliability, because the more accurate the tracker is, the better environment it demands. A CPVS is usually has to subjected to harsh environmental conditions, such as strong wind, heavy rain or snow, and huge changes of temperature, which leads to the invalidation of the system's high-accuracy tracker. Hence, the reliability of a CPVS cannot be improved only by enhancing the tracker's accuracy. In this paper, a novel compound concentrator, combination of Fresnel lens and photo-funnel, has been adopted in a prototype CPVS. Test results show that the compound concentrator can relax the angle tolerance from one tenth to five degrees of arc at 400 suns, which can help a CPVS endure serious environment and remain its reliability over long period. The CPVS with compound concentrator is attractive for commercial application.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Partial oxidation reforming of biomass fuel gas over nickel-based monolithic catalyst with naphthalene as model compound

With naphthalene as biomass tar model compound, partial oxidation reforming (with addition of O-2) and dry reforming of biomass fuel gas were investigated over nickel-based monoliths at the same conditions. The results showed that both processes had excellent performance in upgrading biomass raw fuel gas. Above 99% of naphthalene was converted into synthesis gases (H-2+CO). About 2.8 wt% of coke deposition was detected on the catalyst surface for dry reforming process at 750 degrees C during 108 h lifetime test. However, no Coke deposition was detected for partial oxidation reforming process, which indicated that addition of O-2 can effectively prohibit the coke formation. O-2 Can also increase the CH4 conversion and H-2/CO ratio of the producer gas. The average conversion of CH4 in dry and partial oxidation reforming process was 92% and 95%, respectively. The average H-2/CO ratio increased from 0.95 to 1.1 with the addition of O-2, which was suitable to be used as synthesis gas for dimethyl ether (DME) synthesis.

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

ELECTRONIC AND MAGNETIC-STRUCTURE OF THE TERNARY COMPOUND ND2FE17N

The electronic and the magnetic structure of the Nd2Fe17N1 phase in the family of Nd-Fe-N ternary compounds have been calculated using the first-principles, spin-polarized orthogonalized linear-combination-of-atomic-orbitals method. Results are presented in the form of site-decomposed and spin-projected partial density of states. The occupation sites of the three N atoms are determined by an average radial distribution of all possible N site configurations. Both cases of N occupying the 3b and the 18g sites are studied. The results indicate that the 6c Fe sites have the maximum and the 18h Fe sites have the minimum local moments. This is in good agreement with experiment. It is concluded that the influence on the local moment due to lattice expansion is less important compared to that due to interatomic interaction between the N atom and its neighbors. The results also show the important role of N atoms in raising the Curie temperature of this compound.

Compound specific D/H ratios and molecular distributions of higher plant leaf waxes as novel pale oenvironmental indicators in the Chinese Loess Plateau

IEECAS SKLLQG