Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Photostimulated luminescence of AgI clusters in zeolite-Y

AgI clusters in zeolite-Y (AgI/Y) were prepared by Ag+ exchange followed by reaction with NaI in solution. The formation of the clusters was determined by transmission electron microscopy and Auger electron spectroscopy. The clusters were uniform and even in size, 1.0-2.0 nm. The fluorescence spectrum of the clusters consists of two emission bands, which are attributed to AgI and Ag clusters, respectively. Photostimulated luminescence (PSL) is observed by stimulation at 675 or at 840 nm. The PSL spectrum of AgI/Y is consistent with the emission spectrum of Ag clusters and thus the PSL is considered to be caused by the charge transfer or carrier migration from the zeolite framework or from the AgI clusters to the Ag clusters. The appearance of PSL indicates that these materials may find application as a medium for erasable optical memory. (C) 1998 American Institute of Physics. [S0021-8979(98)02407-4].

practical type checking of functions defined on context-free languages

A type checking method for the functional language LFC is presented. A distinct feature of LFC is that it uses Context-Free (CF) languages as data types to represent compound data structures. This makes LFC a dynamically typed language. To improve efficiency, a practical type checking method is presented, which consists of both static and dynamic type checking. Although the inclusion relation of CF.languages is not decidable,a special subset of the relation is decidable, i.e., the sentential form relation, which can be statically checked.Moreover, most of the expressions in actual LFC programs appear to satisfy this relation according to the statistic data of experiments. So, despite that the static type checking is not complete, it undertakes most of the type checking task. Consequently the run-time efficiency is effectively improved. Another feature of the type checking is that it converts the expressions with implicit structures to structured representation. Structure reconstruction technique is presented.

线性低密度聚乙烯的官能化及其结构和性能研究

本文利用辐照产生的过氧化物作为引发剂，以丙烯酸（AA）、甲基丙烯酸环氧丙酯（GMA）和马来酸酐（MAH）为接枝单体，研制了官能化线性低密度聚乙烯（LLDPE）。利用红外光谱（FT－IR）对接枝物进行了表征。线性低密度聚乙烯接枝丙烯酸在 1712 cm~(-1) 处的羰基吸收峰；线性低密度聚乙烯接枝甲基丙烯酸环氧丙酯在 1720 cm~(-1)和840、910cm~(-1) 处的羰基与环氧吸收峰；线性低密度聚乙烯接枝马来酸酐在 1788和 1712cm~(-1)处的酸酐和羰基吸收峰均证明单体已经接枝到线性低密度聚乙烯分子链上。采用化学滴定法测定了官能化线性低密度聚乙烯的接枝率，并提出了其接枝反应的机理。系统研究了单体浓度、预辐照剂量、反应时间、反应温度等对接枝率和熔体流动速率的影响。研究结果表明，在一定工艺条件下，可以得到高接枝率，无凝胶的官能化线性低密度聚乙烯。通过以接枝单体特征基团的吸收峰（AA 1712 cm~(-1)、GMA 1720 cm~(-1)）与内标峰（1738 cm~(-1)）的强度比为纵坐标，以化学滴定法测得的相应单体接枝率为横坐标，得到了用红外光谱法测定接枝率的标准曲线。利用它可以方便、快速、准确地得到某一未知官能化产物的接枝率。用DSC研究了LLDPE及LLDPE-g-AA的热学性能。发现LLDPE-g-AA的ΔH_m下降，结晶温度升高大约4 ℃。这是由于在非极性的线性低密度聚乙烯分了链中引入了极性基团，使聚乙烯分子链的规整性下降，结晶缺陷增多，晶体的完善下降，从而使接枝物的ΔH_m下降，结晶度变小。等温结晶的结果表明，接枝物结晶速率大于纯 LLDPE的结晶速率，并且随接枝率的增加结晶速率加快。说明接枝到 LLDPE 分了链上的AA分子起到了成核剂的作用，从而使接枝物结晶速度加快。利用SEM观察LLDPE-g-AA 的球晶大小，发现 LLDPE-g-AA 的球晶尺寸明显减小，这进一步证实了前面的结论。测定了极性液体在不同接枝率的 LLDPE-g-AA 膜表面的接触角。发现随着接枝率的增加，接触角显著下降。采用 Zisman 作图法和接触角与表面张力的相关关系式得到了不同接枝率LLDPE-g-AA 的临界表面张力。并利用测接触角的方法计算了 LLDPE/LLDPE-g-AA 共混物的表面能。结果表明，共混物表面能随LLDPE-g-AA含量的增加而增加。用毛细管流变仪研究了官能化线性低密度聚乙烯的流变性能。结果表明，在剪切应力大于2.5×10~4 Pa时，其表现粘度比纯 LLDPE的小，流动性明显提高，加工成型性能得到了改善，且其表观粘度随AA含量的增加而减小，这说明接枝到 LLDPE分子链上的 AA 分子起到了内润滑剂的作用。官能化线性低密度聚乙烯的力学性能测试结果表明，其拉伸强度、模量和断裂伸长率没有显著的变化，这对于实际应用有着非常重要的意义。将官能化线性低密度聚乙烯与金属铝进行复合，测定了其剥离强度。结果表明：由于引入了极性基团，其与铝复合的剥离强度大大提高。接枝率、粘合时间、粘合温度和压力等均会对剥离强度产生较大影响。利用SEM 和 XPS对剥离表面进行了研究，发现剥离的铝表面有一个新的Al_(2p)峰，并且其谱图变宽。剥离铝表面O_(1S)结合能与纯铝表面及剥离 LLDPE-g-AA 表面的O_(1S)结合能不同，说明其处于不同的环境中。上述结果证明 LLDPE-g-AA 与铝在界面处可能发生了反应，从而使其剥离强度大大提高。

Photostimulated luminescence of silver clusters in zeolite-Y

Upon UV-irradiation at 254 nm, the photoluminescence of silver atoms in zeolite-Y decreases, meanwhile an absorption band shows up around 840 nm. By photostimulation at 840 nm, fluorescence of silver atoms is detected, which is called photostimulated luminescence, and the photoluminescence of silver atoms is increased slightly. These phenomena are attributed to the charge-transfer interaction between the zeolite framework and the entrapped silver atoms. (C) 1997 Published by Elsevier Science B.V.

(Ga, Mn, As)/GaAs的发光谱

利用低能双离子束外延技术，在400 ℃条件下生长样品（Ga, Mn, As）/GaAs。样品光致发光谱出现三个峰，即1.5042eV处的GaAs激子峰、1.4875eV处的弱碳峰和低能侧的一宽发光带。宽发光带的中心位置在1.35eV附近，半宽约0.1eV在840 ℃条件下对样品进行退火处理，退火后的谱结构类似退火前，但激子峰和碳杂质峰的峰位分别移至1.5066eV和1.4894eV，同时低能侧的宽发光带的强度大大增加。这一宽发射的来源还不清楚，原因可能是体内杂质和缺陷形成杂质带，生成Mn_2As新相，Mn占Ga位或形成GaMnAs合金。

离子束外延生长半导体性锰硅化合物

利用质量分析的低能双离子束外延技术得到了半导体性的锰硅化物，Mn_(27)Si_(47)和Mn_(15)Si_(26)。俄歇电子谱谐深度组分测量结果表明，在单晶Si的表面淀积了一薄层厚度约为37.5nm的Mn，另一部分Mn离子成功注入进Si基底里，注入深度为618nm。在840℃条件下在流动N_2气氛中对生长样品进行退火，X射线衍射结果表明退火后Mn_(27)Si_(47)和Mn_(15)Si_(26)结晶更好。