Exact evaluation of Gaussian path integrals involving non-local potentials

An exact expression for the calculation of gaussian path integrals involving non-local potentials is given. Its utility is demonstrated by using it to evaluate a path integral arising in the study of an electron gas in a random potential.

Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E-11 and E-21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5-10 meV below the E-21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E-21 transition. The PL intensity of all the three transitions E-11, FES and E-21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E-11 and E-21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Non-Fermi liquid theory of quantum hall effects

Within the Grassmannian U(2N)/U(N) x U(N) nonlinear sigma-model representation of localization, one can study the low-energy dynamics of both a free and interacting electron gas. We study the crossover between these two fundamentally different physical problems. We show how the topological arguments for the exact quantization of the Hall conductance are extended to include the Coulomb interaction problem. We discuss dynamical scaling and make contact with the theory of variable range hopping. (C) 2005 Pleiades Publishing, Inc.

Non-Fermi-liquid theory for disordered metals near two dimensions

We consider the Finkelstein action describing a system of spin-polarized or spinless electrons in 2+2epsilon dimensions, in the presence of disorder as well as the Coulomb interactions. We extend the renormalization-group analysis of our previous work and evaluate the metal-insulator transition of the electron gas to second order in an epsilon expansion. We obtain the complete scaling behavior of physical observables like the conductivity and the specific heat with varying frequency, temperature, and/or electron density. We extend the results for the interacting electron gas in 2+2epsilon dimensions to include the quantum critical behavior of the plateau transitions in the quantum Hall regime. Although these transitions have a very different microscopic origin and are controlled by a topological term in the action (theta term), the quantum critical behavior is in many ways the same in both cases. We show that the two independent critical exponents of the quantum Hall plateau transitions, previously denoted as nu and p, control not only the scaling behavior of the conductances sigma(xx) and sigma(xy) at finite temperatures T, but also the non-Fermi-liquid behavior of the specific heat (c(v)proportional toT(p)). To extract the numerical values of nu and p it is necessary to extend the experiments on transport to include the specific heat of the electron gas.

Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11 and E21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E21 transition. The PL intensity of all the three transitions E11, FES and E21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11 and E21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800

Coulomb drag and tunneling studies in quantum Hall bilayers

The bilayer quantum Hall state at total filling factor ν_T=1, where the total electron density matches the degeneracy of the lowest Landau level, is a prominent example of Bose-Einstein condensation of excitons. A macroscopically ordered state is realized where an electron in one layer is tightly bound to a "hole" in the other layer. If exciton transport were the only bulk transportmechanism, a current driven in one layer would spontaneously generate a current of equal magnitude and opposite sign in the other layer. The Corbino Coulomb drag measurements presented in this thesis demonstrate precisely this phenomenon.

Excitonic superfluidity has been long sought in the ν_T=1 state. The tunneling between the two electron gas layers exihibit a dc Josephson-like effect. A simple model of an overdamped voltage biased Josephson junction is in reasonable agreement with the observed tunneling I-V. At small tunneling biases, it exhibits a tunneling "supercurrent". The dissipation is carefully studied in this tunneling "supercurrent" and found to remain small but finite.

Influência da reorientação de spin nas propriedades termomagnéticas dos compostos da série Ho1-yGdyAl2

Neste trabalho foram estudadas as propriedades estruturais e termomagnéticas dos pseudobinários Ho1-yGdyAl2, através de abordagens experimentais e teóricas. A parte experimental envolveu a preparação de cinco amostras, com as concentrações y = 0, 0,25, 0,5, 0,75 e 1, assim como medidas de magnetização, calor especifico e da variação adiabática da temperatura. Na parte teórica usamos um hamiltoniano modelo que leva em consideração a interação dos íons com o campo magnético aplicado, com o campo elétrico cristalino e a troca entre os íons magnéticos. A entropia da rede foi considerada na aproximação de Debye e a entropia eletrônica na aproximação do gás de elétrons livres. A influência das reorientações de spin, espontâneas e induzidas pelo campo magnético, na magnetização e no calor especifico foram investigadas sistematicamente tanto a partir de dados experimentais quanto teoricamente. Também obtemos resultados teóricos para a variação de entropia e variação adiabática da temperatura alterando a intensidade ou a direção do campo magnético.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Electrically controllable RKKY interaction in semiconductor quantum wires

We demonstrate in theory that it is possible to all-electrically manipulate the RKKY interaction in a quasi-one-dimensional electron gas embedded in a semiconductor heterostructure, in the presence of Rashba and Dresselhaus spin-orbit interaction. In an undoped semiconductor quantum wire where intermediate excitations are gapped, the interaction becomes the short-ranged Bloembergen-Rowland superexchange interaction. Owing to the interplay of different types of spin-orbit interaction, the interaction can be controlled to realize various spin models, e.g., isotropic and anisotropic Heisenberg-like models, Ising-like models with additional Dzyaloshinsky-Moriya terms, by tuning the external electric field and designing the crystallographic directions. Such controllable interaction forms a basis for quantum computing with localized spins and quantum matters in spin lattices.

Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network

The alternate combinational approach of genetic algorithm and neural network (AGANN) has been presented to correct the systematic error of the density functional theory (DFT) calculation. It treats the DFT as a black box and models the error through external statistical information. As a demonstration, the AGANN method has been applied in the correction of the lattice energies from the DFT calculation for 72 metal halides and hydrides. Through the AGANN correction, the mean absolute value of the relative errors of the calculated lattice energies to the experimental values decreases from 4.93% to 1.20% in the testing set. For comparison, the neural network approach reduces the mean value to 2.56%. And for the common combinational approach of genetic algorithm and neural network, the value drops to 2.15%. The multiple linear regression method almost has no correction effect here.

Magnetic quantum oscillations for the surface states of topological insulator Bi2Se3

We study quantum oscillations of the magnetization in Bi2Se3 (111) surface system in the presence of a perpendicular magnetic field. The combined spin-chiral Dirac cone and Landau quantization produce profound effects on the magnetization properties that are fundamentally different from those in the conventional semiconductor two-dimensional electron gas. In particular, we show that the oscillating center in the magnetization chooses to pick up positive or negative values depending on whether the zero-mode Landau level is occupied or empty. An intuitive analysis of these features is given and the subsequent effects on the magnetic susceptibility and Hall conductance are also discussed.

Dislocation scattering in AlxGa1-xN/GaN heterostructures

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well

Magnetotransport measurements have been carried out on In0.53Ga0.17As/In0.52Al0.48 As quantum wells in a temperature range between 1.5 and 77 K. We have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered, we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.