Microwave-induced Hall resistance in bilayer electron systems
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/04/2012
18/04/2012
2011
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| Resumo |
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic-field reversal in the microwave-induced Hall resistance boolean AND R(xy), whereas the dissipative resistance boolean AND R(xx) obeys even symmetry. Studies of Delta R(xy) as a function of the microwave electric field and polarization exhibit a strong and nontrivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity. COFECUB-USP[109/08] FAPESP CNPq |
| Identificador |
PHYSICAL REVIEW B, v.83, n.19, 2011 1098-0121 http://producao.usp.br/handle/BDPI/16278 10.1103/PhysRevB.83.195317 |
| Idioma(s) |
eng |
| Publicador |
AMER PHYSICAL SOC |
| Relação |
Physical Review B |
| Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
| Palavras-Chave | #OSCILLATIONS #GAS #PHOTORESISTANCE #Physics, Condensed Matter |
| Tipo |
article original article publishedVersion |