Microwave-induced Hall resistance in bilayer electron systems


Autoria(s): WIEDMANN, S.; Gusev, Gennady; RAICHEV, O. E.; KRAEMER, S.; BAKAROV, A. K.; PORTAL, J. C.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2011

Resumo

The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic-field reversal in the microwave-induced Hall resistance boolean AND R(xy), whereas the dissipative resistance boolean AND R(xx) obeys even symmetry. Studies of Delta R(xy) as a function of the microwave electric field and polarization exhibit a strong and nontrivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.

COFECUB-USP[109/08]

FAPESP

CNPq

Identificador

PHYSICAL REVIEW B, v.83, n.19, 2011

1098-0121

http://producao.usp.br/handle/BDPI/16278

10.1103/PhysRevB.83.195317

http://dx.doi.org/10.1103/PhysRevB.83.195317

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #OSCILLATIONS #GAS #PHOTORESISTANCE #Physics, Condensed Matter
Tipo

article

original article

publishedVersion