High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

SWAP operation in the two-qubit Heisenberg XXZ model: Effects of anisotropy and magnetic field

In this paper we study the SWAP operation in a two-qubit anisotropic XXZ model in the presence of an inhomogeneous magnetic field. We establish the range of anisotropic parameter lambda within which the SWAP operation is feasible. The SWAP errors caused by the inhomogeneous field are evaluated.

Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.

Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2].

A two-step backoff scheme for improving the performance of the IEEE 802.11 distributed coordination function

This paper describes the binary exponential backoff mechanism of 802.11 distributed coordination function (DCF), and introduces some methods of modifying the backoff scheme. Then a novel backoff scheme, called Two-step Backoff scheme, is presented and illustrated. The simulation process in OPNET environment has been described also. At last, the analysis and simulation results show that the Two-step backoff scheme can enhance the performance of the IEEE 802.11 DCF.

The design of cascaded resistors in a new analog switch two-step ADC architecture

In this paper we introduce a new Half-flash analog switch ADC architecture. And we discuss two methods to design the values of the cascaded resistors which generate the reference voltages. Derailed analysis about the effect of analog switches and comparators on reference voltages, and the methods to set the resistor values and correspond;ng voltage errors are given.

Transition from the exhibition to the nonexhibition of negative differential thermal resistance in the two-segment Frenkel-Kontorova model

An extensive study of the one-dimensional two-segment Frenkel-Kontorova FK model reveals a transition from the counterintuitive existence to the ordinary nonexistence of a negative-differential-thermal-resistance NDTR regime, when the system size or the intersegment coupling constant increases to a critical value. A “phase” diagram which depicts the relevant conditions for the exhibition of NDTR was obtained. In the existence of a NDTR regime, the link at the segment interface is weak and therefore the corresponding exhibition of NDTR can be explained in terms of effective phonon-band shifts. In the case where such a regime does not exist, the theory of phonon-band mismatch is not applicable due to sufficiently strong coupling between the FK segments. The findings suggest that the behavior of a thermal transistor will depend critically on the properties of the interface and the system size.

Friction phenomena and phase transition in the underdamped two-dimensional Frenkel-Kontorova model

Locked-to-sliding phase transition has been studied in the driven two-dimensional Frenkel-Kontorova model with the square symmetric substrate potential. It is found that as the driving force increases, the system transfers from the locked state to the sliding state where the motion of particles is in the direction different from that of driving force. With the further increase in driving force, at some critical value, the particles start to move in the direction of driving force. These two critical forces, the static friction or depinning force, and the kinetic friction force for which particles move in the direction of driving force have been analyzed for different system parameters. Different scenarios of phase transitions have been examined and dynamical phases are classified. In the case of zero misfit angle, the analytical expressions for static and kinetic friction force have been obtained.

Control of chemical reaction in high-intensity laser field

The prospects of control chemical reaction in high-intensity laser field are talked about here, and some experimental and theoretical designs are reviewed and discussed also.

Two-Step Spin-Transition Iron(III) Compound with a Wide [High Spin-Low Spin] Plateau

A new iron(III) coordination compound exhibiting a two-step spin-transition behavior with a remarkably wide [HS-LS] plateau of about 45 K has been synthesized from a hydrazino Schiff-base ligand with an N,N,O donor set, namely 2-methoxy-6-(pyridine-2-ylhydrazonomethyl) phenol (Hmph). The single-crystal X-ray structure of the coordination compound {[Fe(mph)(2)](ClO4)(MeOH)(0.5)(H2O)(0.5)}(2) (1) determined at 150 K reveals the presence of two slightly different iron(III) centers in pseudo-octahedral environments generated by two deprotonated tridentate mph ligands. The presence of hydrogen bonding interactions, instigated by the well-designed ligand, may justify the occurrence of the abrupt transitions. 1 has been characterized by temperature-dependent magnetic susceptibility measurements, EPR spectroscopy, differential scanning calorimetry, and Fe-51 Mossbauer spectroscopy, which all confirm the occurrence of a two-step transition. In addition, the iron(III) species in the high-spin state has been trapped and characterized by rapid cooling EPR studies.

Colloidal crystal heterostructures by a two-step vertical deposition method

A two-step template-induced vertical deposition technique was introduced to fabricate the colloidal crystal heterostructures due to wettability differences and spatial confinement of the templates structured with microchannels. The heterostructures exhibited a bi-frequency Bragg diffraction whose position was determined by the microsphere diameter of the opals. It was demonstrated that the channel width had an influence on the optical properties of the colloidal crystal heterostructures. The strategy proposed is suited for fabrication of different micron-sized opal architectures with complex form and designed optical functionality.