Surface relief resonant Brewster niters with multiple channels

In this paper, a new type of resonant Brewster filters (RBF) with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波器.

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Effects of electron-electron interactions on the electronic Raman scattering of graphite in high magnetic fields

We report the observation of strongly temperature (T)-dependent spectral lines in electronic Raman-scattering spectra of graphite in a high magnetic field up to 45 T applied along the c axis. The magnetic field quantizes the in-plane motion, while the out-of-plane motion remains free, effectively reducing the system dimension from 3 to 1. Optically created electron-hole pairs interact with, or shake up, the one-dimensional Fermi sea in the lowest Landau subbands. Based on the Tomonaga-Luttinger liquid theory, we show that interaction effects modify the spectral line shape from (ω-Δ)-1/2 to (ω-Δ)2α-1/2 at T = 0. At finite T, we predict a thermal broadening factor that increases linearly with T. Our model reproduces the observed T-dependent line shape, determining the electron-electron interaction parameter α to be ∼0.05 at 40 T. © 2014 American Physical Society.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga(1-x)In(x)As(1-)ySb(y)-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Recombination kinetics of Te isoelectronic centers in ZnSTe

The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Depolarization blueshift in intersubband transitions of triangular quantum wires

Major State Basic Research Project 973 program of China 2006CB604907;National Science Foundation of China 60776015 60976008;863 High Technology R&D Program of China 2007AA03Z402

Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

Unselective regrowth for fabricating 1.5-mu m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL). It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties

The growth of InAs quantum dots on vicinal GaAs (100) Substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots showed a clear bimodal size distribution on vicinal substrates. The way of evolution of this bimodal size distribution was studied as a function of growth temperature, InAs layer thickness and InAs deposition rate. The optical properties of dots grown on vicinal substrates were also studied by photoluminescence (PL). It was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower PL line width, a longer emission wavelength, and a larger PL intensity. (c) 2006 Elsevier B.V. All rights reserved.