Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers
| Data(s) |
2006
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|---|---|
| Resumo |
Unselective regrowth for fabricating 1.5-mu m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 Society of Photo-Optical Instrumentation Engineers. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Feng W (Feng W.); Ding Y (Ding Y.); Pan JQ (Pan J. Q.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) .Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers ,OPTICAL ENGINEERING,2006,45(9):Art.No.090501 |
| Palavras-Chave | #光电子学 #buried heterostructure #regrowth #multiple quantum well #distributed feed back #laser #HIGH-TEMPERATURE #OPERATION #10-GB/S |
| Tipo |
期刊论文 |
