508 resultados para resonator


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We experimentally demonstrate locking of a laser frequency to a resonance line of a micro disk resonator. Achieving 1±0.1 pm shifting detection, the approach can be applied for sensing enhancement and perturbation immune NSOM measurements. © OSA 2012.

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We demonstrate bistability in a submicron silicon optical phase shifter based on the photoelastic effect. The strain magnitude is electrically controlled by a piezoelectric thin film placed on top of the device. The hysteresis behavior of the piezoelectric response shows potential application as bistable device independent of the optical intensity. © 2012 American Institute of Physics.

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We experimentally demonstrate a high-Q ultrathin silicon nitride microring resonator operating at wavelength of 970 nm that is favorable for large variety of biophotonic applications. Implementation of thin device layer of 200 nm allows enhanced interaction between the optical mode and environment, while still maintaining high quality factor of resonator. In addition, we show the importance of spectral window around 970 nm to improve device sensing capability. © 2010 American Institute of Physics.

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We demonstrate the tunability of a silicon nitride micro-resonator using the concept of Digital Microfluidics. Our system allows driving micro-droplets on-chip, enabling the control of the effective refractive index at the vicinity of the resonator. © 2010 OSA/FiO/LS 2010.

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We experimentally demonstrate an ultra-thin silicon nitride microring resonator operating at wavelength of 970nm that is favorable for large variety of biophotonic applications. Optimization parameters for improved sensitivity and light-mater interaction are presented. © 2010 Optical Society of America.

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Directional emission InP/AlGaInAs square-resonator microlasers with a side length of 20 mu m are fabricated by standard photolithography and inductively coupled-plasma etching technique. Multimode resonances with about seven distinct mode peaks in a free-spectral range are observed from 1460 to 1560 nm with the free-spectral range of 12.1 nm near the wavelength of 1510 nm, and the mode refractive index versus the photon energy E (eV) as 3.07152+0.18304E are obtained by fitting the laser spectra with an analytical mode wavelength formula derived by light ray method. In addition, mode field pattern is simulated for cold cavity by two dimensional finite-difference time-domain technique.

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1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

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We propose and simulate a new kind of compact polarizing beam splitter (PBS) based on a photonic crystal ring resonator (PCRR) with complete photonic bandgaps. The two polarized states are separated far enough by resonant and nonresonant coupling between the waveguide modes and the microring modes. Some defect holes are utilized to control the beam propagation. The simulated results obtained by the finite-difference time-domain method show that high transmission (over 95%) is obtained and the polarization separation is realized with a length as short as 3.1 mu m. The design of the proposed PBS can be flexible, thanks to the advantages of PCRRs.

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Two-port InGaAsP/InP square resonator microlasers with a side length of 20 mm have been fabricated by the planar technology process, which have two 1 mu m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 x 10(4) at the threshold current.

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We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2 x 10(-3) mm(2). Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

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InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mu m-side square microlaser with a 2-mu m-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0 X 10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA. (C) 2008 Optical Society of America

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A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.5dB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40 mu m is demonstrated as well.

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Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.

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Frequency response of a fiber ring resonator (FRR) composed of an ordinary optical coupler and a segment of optical fiber is theoretically and experimentally investigated. The frequency response equation based oil small-signal modulation is derived and studied in detail. It is shown that the shape of the frequency response curve is very sensitive to the wavelength; as a result, the FRR can be applied to measure the wavelength of a lightwave source with high resolution. With this method, we demonstrate the measurement of tiny changes of wavelength of a DFB laser. (C) 2009 Wiley Periodicals. Inc. Microwave Opt Technol Lett 51 2444-2448, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24608

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Optical bistability is reported in InP/GaInAsP equilateral-triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America