Electrical control of nanoscale functionalization in graphene by the scanning probe technique

Functionalized graphene is a versatile material that has well-known physical and chemical properties depending on functional groups and their coverage. However, selective control of functional groups on the nanoscale is hardly achievable by conventional methods utilizing chemical modifications. We demonstrate electrical control of nanoscale functionalization of graphene with the desired chemical coverage of a selective functional group by atomic force microscopy (AFM) lithography and their full recovery through moderate thermal treatments. Surprisingly, our controlled coverage of functional groups can reach 94.9% for oxygen and 49.0% for hydrogen, respectively, well beyond those achieved by conventional methods. This coverage is almost at the theoretical maximum, which is verified through scanning photoelectron microscope measurements as well as first-principles calculations. We believe that the present method is now ready to realize 'chemical pencil drawing' of atomically defined circuit devices on top of a monolayer of graphene. © 2014 Nature Publishing Group All rights reserved.

Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer

A new method to fabricate nanoscale metallic air-bridges has been investigated. The pillar patterns of the air-bridge were defined on a SiO2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. Thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a PMMA/PMMA-MAA resist system. The fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (HF) solution. Air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. The narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. The advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (C) 2007 Elsevier Ltd. All rights reserved.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

Maximal Heat Generation in Nanoscale Systems

National Basic Research Programme of China G2009CB929300 National Natural Science Foundation of China 10404010 6052100160776061Supported by the National Basic Research Programme of China under Grant No G2009CB929300, and the National Natural Science Foundation of China under Grant Nos 10404010, 60521001 and 60776061.

A New Criterion Number for the Boundary Conditions at the Solid/Liquid Interface in Nanoscale

A simple, but important three-atom model was proposed at the solid/liquid interface, leading to a new criterion number, lambda, governing the boundary conditions (BCs) in nanoscale. The solid wall is considered as the face-centered-cubic (fcc) structure. The fluid is the liquid argon with the well-known LJ potential. Based on the concept, the two micro-systems have the same BCs if they have The same criterion number. The degree of the locking BCs is enhanced when lambda equals to 0.757. Such critical criterion number results in the substantial epitaxial ordering and one, two, or even three liquid layers are locked by the solid wall, depending on the coupling energy scale ratio of the solid and liquid atoms. With deviation from the critical criterion number, the flow approaches the slip BCs and there are little ordering structures within the liquid. Always at the same criterion number, the degree of the slip is decreased or the locking is enhanced with increasing the coupling energy scale ratio of the solid and liquid atoms. The above analysis is well confirmed by the molecular dynamics (MD) simulation. The slip length is well correlated in terms of the new criterion number. The future work is suggested to extend the present theory for other microstructures of the solid wall atoms and quasi-LJ potentials.

Interface energy and its influence on interface fracture between metal and ceramic thin films in nanoscale

A theoretical model about the size-dependent interface energy between two thin films with different materials is developed by considering the chemical bonding contribution based on the thermodynamic expressions and the structure strain contribution based on the mechanical characteristics. The interface energy decreases with reducing thickness of thin films, and is determined by such available thermodynamic and mechanical parameters as the melting entropy, the melting enthalpy, the shear modulus of two materials, etc. The predicted interface energies of some metal/MgO and metal/Al2O3 interfaces based on the model are consistent with the results based on the molecular mechanics calculation. Furthermore, the interface fracture properties of Ag/MgO and Ni/Al2O3 based on the atomistic simulation are further compared with each other. The fracture strength and the toughness of the interface with the smaller structure interface energy are both found to be lower. The intrinsic relations among the interface energy, the interface strength, and the fracture toughness are discussed by introducing the related interface potential and the interface stress. The microscopic interface fracture toughness is found to equal the structure interface energy in nanoscale, and the microscopic fracture strength is proportional to the fracture toughness. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501090]

Nanoscale-enhanced Ru(bpy)(3)(2+) electrochemiluminescence labels and related aptamer-based biosensing system

A unique multilabeling at a single-site protocol of the Ru(bpy)(3)(2+) electrochemiluminescence (ECL) system is proposed. Nanoparticles (NPs) were used as assembly substrates to enrich ECL co-reactants of Ru(bpy)(3)(2+) to construct nanoscale-enhanced ECL labels. Two different kinds of NP substrates [including semiconductor NPs (CdTe) and noble metal NPs (gold)] capped with 2-(dimethylamino)ethanethiol (DMAET) [a tertiary amine derivative which is believed to be one of the most efficient of co-reactants of the Ru(bpy)(3)(2+) system] were synthesized through a simple one-pot synthesis method in aqueous media.

Morphology control of nanoscale PbS particles in a polyol process

Nanostructured PbS with different morphologies and particle sizes have been prepared through a polyol process. Narrow size distribution for star-shaped, octahedral, tetradecanehedral, and cubic products were achieved by slowly introducing the source materials using a peristaltic pump in the presence of poly(vinylpyrrolidone) (PVP) as additive. Systematic variation of the kinetic factors, including the additive, the reaction temperature, the duration time, the ratio of source materials, the Sulfur sources, and the Pb(Ac)(2)center dot 3H(2)O concentration, reveals that the morphology depends mainly on the supersaturation degree of the free sulfur ions released from thiourea under elevated temperature.

Fabrication of Iron Oxide Core/Gold Shell Submicrometer Spheres with Nanoscale Surface Roughness for Efficient Surface-Enhanced Raman Scattering

A method to synthesize Fe3O4 core/Au shell submicrometer structures with very rough surfaces on the nanoscale is reported. The Fe3O4 particles were first modified with uniform polymers through the layer-by-layer technique and then adsorbed a lot of gold nanoseeds for further Au shell formation. The shell was composed of a large number of irregular nanoscale An particles arranged randomly, and there were well-defined boundaries between these Au nanoparticles. The Fe3O4 core/Au shell particles showed strong plasmon resonance absorption in the near-infrared range, and can be separated quickly from solution by an external magnet.

Preparation of polymer/silica nanoscale hybrids through sol-gel method involving emulsion polymers. II. Poly(ethyl acrylate)/SiO2

Poly(ethyl acrylate) (PEA)/SiO2 hybrids with different compositions were prepared under different casting temperatures and pH values. Their morphology as investigated by transmission electron microscopy (TEM) shows that samples with different compositions have different morphologies. When the SiO2 content is lower, PEA is the continuous phase and SiO2 is the dispersed phase. At higher SiO2 content, the change in phase morphology takes place, nd PEA gradually dispersing in the form of latex particles in SiO2 matrix. Change in phase morphology depends mainly on the time the sol-gel transition occurs. At suitable casting temperature and pH value, PEA/SiO2 in 95/5 and 50/50 hybrids with even dispersion was obtained.

Preparation of polymer/silica nanoscale hybrids through sol-gel method involving emulsion polymers (PMMA/SiO2)

The different poly (methyl methacrylate) (PMMA) /SiO2 hybrids were prepared through sol-gel method involving PMMA emulsion (emulsion method) and PMMA/THF solution (solution method). The samples were characterized by differential scanning calorimetry(DSC), thermogravimetry analysis(TGA), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results showed that PMMA/SiO2 composites in nanoscale were prepared by emulsion method, and its size of phase heterogeneity was less than that of solution method. Meanwhile, the polymer emulsion as the reactive medium was more suitable for the formation of SiO2 network.