Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC


Autoria(s): ZhangCH; DonnellySE; VishnyakovVM; EvansJH
Data(s)

2003

Identificador

http://ir.impcas.ac.cn/handle/113462/1911

http://www.irgrid.ac.cn/handle/1471x/128104

Fonte

ZhangCH;DonnellySE;VishnyakovVM;EvansJH.Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC,JOURNAL OF APPLIED PHYSICS,2003,94(10):6017-6022

Tipo

期刊论文