Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC

Autoria(s): ZhangCH; DonnellySE; VishnyakovVM; EvansJH
Data(s)

2003
Identificador

http://ir.impcas.ac.cn/handle/113462/1911

http://www.irgrid.ac.cn/handle/1471x/128104
Fonte

ZhangCH；DonnellySE；VishnyakovVM；EvansJH.Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC,JOURNAL OF APPLIED PHYSICS,2003,94(10):6017-6022
Tipo

期刊论文
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