Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC
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2003
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Fonte |
ZhangCH;DonnellySE;VishnyakovVM;EvansJH.Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC,JOURNAL OF APPLIED PHYSICS,2003,94(10):6017-6022 |
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期刊论文 |