Intense frequency upconversion luminescence in Yb3+/Tm3+-codoped oxychloride germanate glasses

Yb3+/Tm3+-codoped oxychloride germanate glasses for developing potential upconversion lasers have been fabricated and characterized. Structural properties were obtained based on the Raman spectra analysis, indicating that PbCl2 plays an important role in the formation of glass network and has an important influence on the maximum phonon energies of host glasses. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. With increasing PbCl2 content, the intensity of blue (477 nm) emission increases significantly, while the red (650 nm) emission increases slowly. The results indicate that PbCl2 has more influence on the blue emissions than the red emission in oxychloride germanate glasses. The possible upconversion mechanisms are discussed and estimated. Intense blue upconversion luminescence indicates that these oxychloride germanate glasses can be used as potential host material for upconversion lasers. C (c) 2005 Springer Science + Business Media, Inc.

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence

We report on transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence. Ni2+-doped MgO-Al2O3-SiO2 glass is Prepared by using the conventional method. After heat treatment at high temperature, MgAl2O4 crystallites are precipitated, and their average size is about 4.3nm. No luminescence is detected in the as-prepared glass sample, while broadband infrared luminescence centred at around 1315nm with full width at half maximum (FWHM) of about 300nm is observed from the glass ceramics. The observed infrared emission could be attributed to the T-3(2g)(F-3) -> (3)A(2g)(F-3) transition of octahedral Ni2+ ions in the MgAl2O4 crystallites of the transparent glass ceramics. The product of the fluorescence lifetime and the stimulated emission cross section is about 1.6 X 10(-24) s cm(2).

Comparative investigation of up-conversion luminescence in Tm3+/Yb3+-codoped germanate-niobic and germanium-bismuth glasses: effect of phonon density on up-conversion emission

Tm3+/Yb3+-codoped gernianate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional ruching and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4)->H-3(6) and (1)G(4)->H-3(4), respectively, were observed at room temperature. The possible Up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Green and red upconversion luminescence in ytterbium-sensitized erbrium-doped novel lead-free germanium bismuth lanthanum glass

Structural and infrared-to-visible upconversion fluorescence properties in ytterbium-sensitized erbrium-doped novel lead-free germanium bismuth-lanthanum glass have been studied. The structure of lead-free germanium-bismuth-lanthanum glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wavenumbers. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions 2H(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation. This novel lead-free germanium-bismuth-lanthanum glass with low maximum phonon energy (similar to 751 cm(-1)) can be used as potential host material for upconversion lasers. (c) 2005 Published by Elsevier B.V.

Comparative investigation of up-conversion luminescence in Tm3+-doped oxide-chloride germanate and tellurite glasses

Tm3+-doped oxide-chloride germanate and tellurite glasses have been synthesized by conventional melting method. Intense up-conversion luminescence emissions were simultaneously observed at room temperature in these glasses. The possible up-conversion mechanisms are discussed and estimated. However, in these Tm3+-doped glasses, tellurite glass showed weaker up-conversion emissions than germanate glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Our results confirm that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Up-conversion luminescence analysis in ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses

Ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses have been synthesized by conventional melting method. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2), respectively, were simultaneously observed at room temperature in these glasses. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. Tellurite glass showed a weaker up-conversion emission than germanate-niobic-lead glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate-mobic-lead glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. Our results reveal that the phonon density and the maximum phonon energy of host glasses are both important factors in determining the up-conversion efficiency. (c) 2005 Elsevier B.V. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thullum-doped oxychloride germanate glass

Structural and upconversion fluorescence properties in ytterbium-sensitized thulium-doped oxychloride germanate glass have been studied. The structure of oxychloride germanate glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wavenumbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) ->(3) H-6 and (1)G ->H-3(4), respectively, were observed at room temperature. The possible upconversion mechanisms are discussed and estimated. Intense upconversion luminescence indicates that oxychloride germanate glass can be used as potential host material for upconversion lasers. (c) 2004 Elsevier B.V. All rights reserved.

Optical spectroscopy of Yb3Al5O12 single crystal

Yb3Al5O12 single crystal has been grown by Czochralski (CZ) method. The absorption spectrum was investigated at low temperature and the electronic energy levels for F-2(5/2) multiplet of Yb3+ in YbAG was proposed. The up-conversion emission of the crystal under 940 nm diode pumping and the X-ray excited luminescence (XEL) features of the crystal were also studied. (c) 2005 Elsevier B.V. All rights reserved.

Upconversion luminescence from E-2 state of Cr3+ in Al2O3 crystal by infrared femtosecond laser irradiation

Visible upconversion luminescence was observed in Cr3+: Al2O3 crystal under focused femtosecond laser irradiation. The luminescence spectra show that the upconversion luminescence originates from the E-2-(4)A(2) transition of Cr3+. The dependence of the fluorescence intensity of Cr3+ on the pump power reveals that a two-photon absorption process dominates in the conversion of infrared radiation to the visible emission. It is suggested that the simultaneous absorption of two infrared photons produces the population of upper excited states, which leads to the characteristic visible emission from E-2 state of Cr3+.

Microstructural evolution of SiOx films and its effect on the luminescence of Si nanoclusters

In this paper we demonstrate that the structural and optical properties of Si nanoclusters (Si ncs) formed by thermal annealing of SiOx films prepared by plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering are very different. In fact, at a fixed Si excess and annealing temperature, photoluminescence (PL) spectra of sputtered samples are redshifted with respect to PECVD samples, denoting a larger Si ncs size. In addition, PL intensity reaches a maximum in sputtered films at annealing temperatures much lower than those needed in PECVD films. These data are correlated with structural properties obtained by energy filtered transmission electron microscopy and electron energy loss spectroscopy. It is shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration occurs in sputtered films. These data are explained on the basis of the different initial structural properties of the as-deposited films that become crucial for the subsequent evolution. © 2008 American Institute of Physics.

Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy

ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].

Photostimulated luminescence of AgI clusters in zeolite-Y

AgI clusters in zeolite-Y (AgI/Y) were prepared by Ag+ exchange followed by reaction with NaI in solution. The formation of the clusters was determined by transmission electron microscopy and Auger electron spectroscopy. The clusters were uniform and even in size, 1.0-2.0 nm. The fluorescence spectrum of the clusters consists of two emission bands, which are attributed to AgI and Ag clusters, respectively. Photostimulated luminescence (PSL) is observed by stimulation at 675 or at 840 nm. The PSL spectrum of AgI/Y is consistent with the emission spectrum of Ag clusters and thus the PSL is considered to be caused by the charge transfer or carrier migration from the zeolite framework or from the AgI clusters to the Ag clusters. The appearance of PSL indicates that these materials may find application as a medium for erasable optical memory. (C) 1998 American Institute of Physics. [S0021-8979(98)02407-4].