914 resultados para condensation in metal oxidation reactions


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Numerical techniques for non-equilibrium condensing flows are presented. Conservation equations for homogeneous gas-liquid two-phase compressible flows are solved by using a finite volume method based on an approximate Riemann solver. The phase change consists of the homogeneous nucleation and growth of existing droplets. Nucleation is computed with the classical Volmer-Frenkel model, corrected for the influence of the droplet temperature being higher than the steam temperature due to latent heat release. For droplet growth, two types of heat transfer model between droplets and the surrounding steam are used: a free molecular flow model and a semi-empirical two-layer model which is deemed to be valid over a wide range of Knudsen number. The computed pressure distribution and Sauter mean droplet diameters in a convergent-divergent (Laval) nozzle are compared with experimental data. Both droplet growth models capture qualitatively the pressure increases due to sudden heat release by the non-equilibrium condensation. However the agreement between computed and experimental pressure distributions is better for the two-layer model. The droplet diameter calculated by this model also agrees well with the experimental value, whereas that predicted by the free molecular model is too small. Condensing flows in a steam turbine cascade are calculated at different Mach numbers and inlet superheat conditions and are compared with experiments. Static pressure traverses downstream from the blade and pressure distributions on the blade surface agree well with experimental results in all cases. Once again, droplet diameters computed with the two-layer model give best agreement with the experiments. Droplet sizes are found to vary across the blade pitch due to the significant variation in expansion rate. Flow patterns including oblique shock waves and condensation-induced pressure increases are also presented and are similar to those shown in the experimental Schlieren photographs. Finally, calculations are presented for periodically unsteady condensing flows in a low expansion rate, convergent-divergent (Laval) nozzle. Depending on the inlet stagnation subcooling, two types of self-excited oscillations appear: a symmetric mode at lower inlet subcooling and an asymmetric mode at higher subcooling. Plots of oscillation frequency versus inlet sub-cooling exhibit a hysteresis loop, in accord with observations made by other researchers for moist air flow. Copyright © 2006 by ASME.

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The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

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The experimental results show that the exchange coupling field H.. of NiFe/FeMn for TalNiFe/FeMn/Ta multilayers is higher than that for the spin valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. The composition and chemical states at the surface of Ta(12nm)/NiFe(7nm), Th(12nm)/NiFe(7nm)/Cu(4nm) and Ta(12nm)/NiFe(7nm)/Cu(3 nm)/NiFe(5 mn) were studied by using x-ray photoelectron spectroscopy. The results show that no element from the underlayers Boats out or segregates to the surface for Th(12 nm)/NiFe(7nm), Ta(12 nm)/NiFe(7nm)/Cu(4 mn). However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7nm)/Cu(3nm)/NiFe(5nm) multilayers, i.e. to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which will cause the exchange coupling field H.. of Ta/NiFe/FeMn/Ta multilayers to be higher than that of Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers.

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Condensation of steam in a single microchannel, silicon test section was investigated visually at low flow rates. The microchannel was rectangular in cross-section with a depth of 30 pm, a width of 800 mu m and a length of 5.0 mm, covered with a Pyrex glass to allow for visualization of the bubble formation process. By varying the cooling rate during condensation of the saturated water vapor, it was possible to control the shape, size and frequency of the bubbles formed. At low cooling rates using only natural air convection from the ambient environment, the flow pattern in the microchannel consisted of a nearly stable elongated bubble attached upstream (near the inlet) that pinched off into a train of elliptical bubbles downstream of the elongated bubble. It was observed that these elliptical bubbles were emitted periodically from the tip of the elongated bubble at a high frequency, with smaller size than the channel width. The shape of the emitted bubbles underwent modifications shortly after their generation until finally becoming a stable vertical ellipse, maintaining its shape and size as it flowed downstream at a constant speed. These periodically emitted elliptical bubbles thus formed an ordered bubble sequence (train). At higher cooling rates using chilled water in a copper heat sink attached to the test section, the bubble formation frequency increased significantly while the bubble size decreased, all the while forming a perfect bubble train flowing downstream of the microchannel. The emitted bubbles in this case immediately formed into a circular shape without any further modification after their separation from the elongated bubble upstream. The present study suggests that a method for controlling the size and generation frequency of microbubbles could be so developed, which may be of interest for microfluidic applications. The breakup of the elongated bubble is caused by the large Weber number at the tip of the elongated bubble induced by the maximum vapor velocity at the centerline of the microchannel inside the elongated bubble and the smaller surface tension force of water at the tip of the elongated bubble.

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The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

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This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.