Structure and optical properties of ZnS thin films grown by glancing angle deposition

The glancing angle deposition (GLAD) technique was used to deposit ZnS films by electron beam evaporation method. The cross sectional scanning electron microscopy (SEM) image illustrated a highly orientated microstructure composed of slanted column. The atomic force microscopy (APM) analysis indicated that incident flux angle had significant effects on the nodule size and surface roughness. Under identical nominal thickness, the actual thickness of the GLAD films is related to the incident flux angle. The refractive index and in-plane birefringence of the GLAD ZnS films were discussed, and the maximum bireffingence Delta n = 0.036 was obtained at incident flux angle of alpha = 80 degrees. Therefore, the glancing angle deposition technique is a promising way to create a columnar structure with enhanced birefringent property. (c) 2005 Elsevier B.V. All rights reserved.

斜角入射沉积法制备渐变折射率薄膜的折射率分析

斜角入射沉积法是一种制备薄膜的新颖方法，它可以用来制备渐变折射率薄膜．本文首先探讨了膜料的沉积入射角为α，薄膜柱状生长倾斜角为β时的薄膜的填充系数；之后利用drude理论，分析研究了斜角入射沉积法制备渐变折射率薄膜的折射率与薄膜的入射角和生长方向的关系．

光波在具有柱状结构的双折射薄膜中的传输特性

根据电磁场理论的矩阵分析方法推导了光波在具有柱状结构的双轴薄膜中的反射系数、透射系数和相位关系等光学特性。这些关系包含了界面处的多点反射，可以推广到一般的各向异性的多层膜系统。给出了各向同性入射媒质一双轴各向异性膜层一各向同性基底薄膜系统的计算结果，验证了该计算方法的可行性，为双折射多层膜结构及其器件的理论分析和设计提供了理论参考。

The effect of diffusion and overhangs/vacancies on the microstructure of zig-zag thin film

Basing on some growth models of thin film, we have investigated the growth mechanism of glancing angle deposition (GLAD) film. The simulation verifies that the overhangs/vacancies also contribute to the columnar growth as well as the self-shadowing effect for GLAD thin film. Besides, we have studied the effect of the deposition rate, surface and bulk diffusions on the microstructure of thin film using the time-dependent Monte Carlo method. The results show that the surface and bulk diffusions can significantly enhance the packing density of thin film in GLAD growth, and the increase of the deposition rate induce the moderate decrease of the packing density. (c) 2006 Elsevier B.V. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Caracterização de juntas soldadas por Arame Tubular com proteção gasosa do aço ferrítico ASTM A335 P91, antes e após situação de duplo reparo.

Pouco se sabe a respeito das consequências da operação de reparo nas propriedades mecânicas e metalúrgicas das juntas do aço ASTM A335 grau P91 soldadas por Arame Tubular. Neste trabalho foi realizado um estudo para analisar e caracterizar juntas de um tubo do aço P91 soldadas pelo processo Arame Tubular com proteção gasosa, antes e após situação de duplo reparo. Foram utilizadas técnicas de microscopia eletrônica de varredura (MEV), análise química semiquantitativa por EDS (Energy Dispersive Spectroscopy), microscopia óptica (MO), além da obtenção de medidas de microdureza Vickers e realização de ensaios de impacto e tração à temperatura ambiente. A macrografia revelou a existência de uma nova zona termicamente afetada formada no centro da junta reparada e a análise micrográfica mostrou que esta zona apresentou uma pequena tendência a formação de grãos menores do que na zona de fusão que sofreu reparo, além disso, a região tinha grãos colunares que não são característicos de uma zona termicamente afetada e quantidade de carbonetos menor comparativamente. Não houve variações significativas nos valores de tração e microdureza. Os ensaios de impacto revelaram baixos valores de energia absorvida na zona de fusão do 2 reparo, no entanto, todas as outras zonas avaliadas das juntas com e sem reparo apresentaram valores dentro das especificações.

Evolution of localized blobs of swirling or buoyant fluid with and without an ambient magnetic field.

We investigate the evolution of localized blobs of swirling or buoyant fluid in an infinite, inviscid, electrically conducting fluid. We consider the three cases of a strong imposed magnetic field, a weak imposed magnetic field, and no magnetic field. For a swirling blob in the absence of a magnetic field, we find, in line with others, that the blob bursts radially outward under the action of the centrifugal force, forming a thin annular vortex sheet. A simple model of this process predicts that the vortex sheet thins exponentially fast and that it moves radially outward with constant velocity. These predictions are verified by high-resolution numerical simulations. When an intense magnetic field is applied, this phenomenon is suppressed, with the energy and angular momentum of the blob now diffusing axially along the magnetic field lines, converting the blob into a columnar structure. For modest or weak magnetic fields, there are elements of both types of behavior, with the radial bursting dominating over axial diffusion for weak fields. However, even when the magnetic field is very weak, the flow structure is quite distinct to that of the nonmagnetic case. In particular, a small but finite magnetic field places a lower bound on the thickness of the annular vortex sheet and produces an annulus of counter-rotating fluid that surrounds the vortex core. The behavior of the buoyant blob is similar. In the absence of a magnetic field, it rapidly develops the mushroomlike shape of a thermal, with a thin vortex sheet at the top and sides of the mushroom. Again, a simple model of this process predicts that the vortex sheet at the top of the thermal thins exponentially fast and rises with constant velocity. These predictions are consistent with earlier numerical simulations. Curiously, however, it is shown that the net vertical momentum associated with the blob increases linearly in time, despite the fact that the vertical velocity at the front of the thermal is constant. As with the swirling blob, an imposed magnetic field inhibits the formation of a vortex sheet. A strong magnetic field completely suppresses the phenomenon, replacing it with an axial diffusion of momentum, while a weak magnetic field allows the sheet to form, but places a lower bound on its thickness. The magnetic field does not, however, change the net vertical momentum of the blob, which always increases linearly with time.

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.

Scaling laws for planetary dynamos

We propose new scaling laws for the properties of planetary dynamos. In particular, the Rossby number, the magnetic Reynolds number, the ratio of magnetic to kinetic energy, the Ohmic dissipation timescale and the characteristic aspect ratio of the columnar convection cells are all predicted to be power-law functions of two observable quantities: the magnetic dipole moment and the planetary rotation rate. The resulting scaling laws constitute a somewhat modified version of the scalings proposed by Christensen and Aubert. The main difference is that, in view of the small value of the Rossby number in planetary cores, we insist that the non-linear inertial term, uu, is negligible. This changes the exponents in the power-laws which relate the various properties of the fluid dynamo to the planetary dipole moment and rotation rate. Our scaling laws are consistent with the available numerical evidence. © The Authors 2013 Published by Oxford University Press on behalf of The Royal Astronomical Society.

Triplophysa lixianensis, a new nemacheiline loach species (Pisces : Balitoridae) from the upper Yangtze River drainage in Sichuan Province, South China

Triplophysa lixianensis, a new nemacheiline loach species, is described from the Min Jiang of the upper Yangtze River drainage in Sichuan Province, South China. It can be separated from all other species of Triplophysa by having a unique combination of the following characters: posterior chamber of gas bladder greatly reduced or absent; caudal peduncle columnar with a roughly round cross- section at its beginning; anterior edge of lower jaw completely exposed or uncovered by lower lip; intestine short, forming a zigzag loop below stomach; dorsal- fin origin closer to caudal- fin base than to snout tip; pelvic fin inserted anterior to dorsal- fin origin; snout length 50.6 - 57.5 % of head length; eye diameter 12.3 15.4 % of head length; caudal peduncle length 25.1 - 27.1 % of standard length; anal fin with five branched rays; lower lip greatly furrowed with two thick lateral lobes; and body smooth or scaleless.

Tensile and compressive mechanical behavior of twinned silicon carbide nanowires

Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires.

Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition

The A1 compositional distribution of A1GaN is investigated by cathodoluminescence (CL). Monochromatic CL images and CL spectra reveal a lateral A1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. Cross-sectional CL images show a relatively uniform Al compositional distribution in the growth direction, indicating columnar growth mode of A1GaN films. In addition, a thin A1GaN layer with lower Al composition is grown on top of the buffer A1N layer near the bottom of the A1GaN epilayer because of the larger lateral mobility of Ga adatoms on the growth surface and their accumulation at the grain boundaries.

Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition

Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperature by hot wire chemical vapor deposition (HWCVD). Microstructures of the mu c-Si:H films with different H-2/SiH4 ratios and deposition pressures have been characterized by infrared spectroscopy X-ray diffraction (XRD), Raman scattering, Fourier transform (FTIR), cross-sectional transmission electron microscopy (TEM) and small angle X-ray scattering (SAX). The crystallization of silicon thin film was enhanced by hydrogen dilution and deposition pressure. The TEM result shows the columnar growth of mu c-Si:H thin films. An initial microcrystalline Si layer on the glass substrate, instead of the amorphous layer commonly observed in plasma enhanced chemical vapor deposition (PECVD), was observed from TEM and backside incident Raman spectra. The SAXS data indicate an enhancement of the mass density of mu c-Si:H films by hydrogen dilution. Finally, combining the FTIR data with the SAXS experiment suggests that the Si--H bonds in mu c-Si:H and in polycrystalline Si thin films are located at the grain boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.