Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD


Autoria(s): Jia CH; Chen YH; Liu GH; Liu XL; Yang SY; Wang ZG
Data(s)

2008

Resumo

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/7405

http://www.irgrid.ac.cn/handle/1471x/63440

Idioma(s)

英语

Fonte

Jia CH ; Chen YH ; Liu GH ; Liu XL ; Yang SY ; Wang ZG .Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2008 ,311(1):200-204

Palavras-Chave #半导体材料 #Growth behavior #SrTiO3 #MOCVD #ZnO
Tipo

期刊论文