Effects of growth interruption on self-assembled InAs/GaAs islands

The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon

The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observed. The adsorption of 9-cyanoanthracene induced the photoluminescence enhancement, while anthracene adsorption resulted in photoluminescent quenching. An explanation of the interaction of adsorbates with surface defect sites of porous silicon was suggested and discussed. (C) 1998 Elsevier Science S.A.

Annealing behavior of InAs/GaAs quantum dot structures

We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.

Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots

A series of GaAs/InAs/GaAs samples were studied by double crystal X-ray diffraction and the X-ray dynamic theory was used to analyze the X-ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3-dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

软件过程的比较框架研究

软件过程在软件开发中占有非常重要的地位.根据项目的需求和特点,选择一个合适的软件过程可以使项目的开发事半功倍.为了指导软件过程的选择,本文给出了一个简明的软件过程比较框架,并依据这个比较框架,对几个典型的软件过程进行了分析和比较.

Two-dimensional photovoltaic dark spatial solitons of partially spatially incoherent light

We report a successful experimental observation of two-dimensional photovoltaic dark solitons in an anisotropic crystal with partially spatially incoherent light beams. This kind of solitons results from the bulk photovoltaic effect, which depends on the direction of propagation of the optical beam and on the orientation of the intensity gradient, with respect to the principal axes of the crystal.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

仿生膜的电化学研究

仿生膜电化学是一门新兴的、也是当前很活跃的电化学和电分析化学的前沿领域。本文简要评述了生物膜领域的发展过程及研究现状，介绍了关于生物膜的一些基本性质和理论。概要总结了作为生物膜的研究模型一仿生膜在各个领域的研究情况及现状，展望了仿生膜在诸多领域应用的前景。采用电化学方法对支撑双层磷脂膜（s一BLM）和液／液界面等不同的模拟生物膜体系进行了研究，并结合AFM、XPS以及IR等谱学手段对蛋白质、核酸与生物膜之间的相互作用进行了初步探讨。主要结果如下：1．我们在玻碳电极表面成功地制备了嵌有DNA支撑双层磷脂膜，并用循环伏安法和阻抗谱图法证明了所形成的磷脂膜是双层。用循环伏安法、傅立叶红外和原子力显微镜表征了膜内DNA.此功能化膜表现出离子通道的行为，对其机理加以探讨，并且离子通道的形成通过电化学阻抗谱图证明。通道在激发物存在时形成打开，通道电流随激发物的增加而增强；反之，则通道关闭。此过程可反复多次。这种DNA修饰的电极可制成电化学传感器，利用离子通道原理，应用在基因检测和研究DNA与其它分子的反应等方面。2．我们提出了一种在云母上成膜的全新方法一直接将DMPC磷脂膜制备在新解理的云母片上。通过AFM和XP S证明了DMPC磷脂在云母上直接形成双层膜。用AFM观察了膜的形成与时间的关系，在成膜过程中，随着在KCI溶液中的浸泡时间的增长，逐渐由多层膜变成双层膜，整个成膜过程需20分钟，最后形成双层膜。探讨了成膜机理。此种成膜方法快速、简便、易行，且在空气中非常稳定。此种成膜方法为深入研究膜提供必要的前提和机会、为进一步研究生物材料提供了基础，有助于结构生物学的研究。 3．谷胺酸是基本的神经递质。用聚谷胺酸嵌入双层磷脂膜作为钙离子的接受器。研究了固定有功能基团的S一BLM的离子通道行为，探讨了离子通道形成的机理。在钙离子存在的情况下，离子通道打开，反之则离子通道处于关闭状态。此过程可反复多次。对钙离子的伏安响应快速，离子通道电流仅与钙离子的浓度有关，而与加入钙离子时间无关。 4．在玻碳电极表面上制备了由玻碳支持的磷脂膜，借助电化学阻抗分析技术，我们证明了在玻碳电极表面上的磷脂膜为双层磷脂膜。研究了六氟磷酸根阴离子(PF6-)与双层磷脂膜的相互作用及玻碳电极上的s一BLM的离子通道行为，s一BLM显示了较为敏感的通透性的变化，所产生的通道电流大小不仅与通道激发物浓度有关，而且也与时间有关。离子通道行为可用于测定PF6一。 5．我们用简单的方法制备了水一琼脂微电极，并且用此电极研究了简单离子和推动离子的转移过程。简单离子和推动离子在水一琼脂／1，2_二氯乙烷界面的转移过程的特点与其在水／1，2一二氯乙烷界面的转移过程的特点相似。进一步证明了，硅烷化对琼脂一水微电极几乎没有影响，此类琼脂一水微电极和固体微电极有着相似的特性，并且可作sECM的探头。6．用循环伏安法研究新型载体一端烯基液晶冠醚推动钠离子的转移，并且表明钠离子的转移是由扩散控制。探讨了影响钠离子转移的因素，诸如：端烯基液晶冠醚和钠离子浓度等。求算出端烯基液晶冠醚在1，2一二氯乙烷中的扩散系数是（2.61±0.12) * 10~(-6)CM~2s~(-1)，端烯基液晶冠醚和7.用循环伏安法对简单离子一四乙基钱阳离子（TEA~+）转移进行了研究。结果表明：TEA~+随微玻管内径减小（小于3μm），电流逐渐呈现拟稳态。随TEA~+浓度减小，i_p值也减小。峰电流与扫描速度的平方根成正比，并且符合Randles-Sevcik关系。同时讨论了微液／液界面TEA~+体系简单离子的转移机理。