Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.