Ablation and ultrafast dynamics of zinc selenide under femtosecond laser irradiation

The ablation in zinc selenide (ZnSe) crystal is studied by using 150-fs, 800-nm laser system. The images of the ablation pit measured by scanning electronic microscope (SEM) show no thermal stress and melting dynamics. The threshold fluence is measured to be 0.7 J/cm2. The ultrafast ablation dynamics is studied by using pump and probe method. The result suggests that optical breakdown and ultrafast melting take place in ZnSe irradiated under femtosecond laser pulses.

热容型板条激光器的感应折射率计算

高平均功率固体激光器的增益介质由于受热而容易发生畸变,如常用材料YAG,波前畸变和去偏振现象会同时发生,高热负载固体激光介质的热效应已成为制约激光器输出功率进一步提高的严重障碍。给出一种计算热容型板条激光器热感生折射率的方法。把YAG晶体的四阶压光张量从晶胞坐标系转换到实验室坐标系,采用经过坐标转换后的新的张量,可以分析在YAG激光器中任意应力分布引起的热感应双折射。进一步的计算表明,在zigzag板条激光器中,应力双折射率与板条从晶体毛胚上切割成材的角度有关。同时也对热容板条激光器的热效应和应力特性进行了二维的理论性概述。

晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究

采用提拉法成功生长了氮化镓和氧化锌基外延薄膜晶格匹配的ScAlMgO4单晶衬底材料,晶体呈透明白色,尺寸为Ф30mm×59mm,表面部分沿解理面有裂纹.粉末X射线衍射（XRD）分析表明经1400℃固相反应烧结的原料基本合成了ScAlMgO4多晶相.初步的偏光显微镜观察、晶体的粉末XRD表征、透过光谱和双晶摇摆测试表明晶体具有较好的光学性质和结晶质量.研究表明晶体本身的层状结构、较大的温度梯度和热应力的不均匀性是生长过程中引起晶体开裂的几个主要原因.

ScAlMgO_4晶体的生长缺陷

采用提拉法生长出φ30 mm×55 mm的ScAlMgO4晶体。在晶体生长过程中有轻微的挥发,粉末X射线衍射分析表明:挥发物质为MgO单相。运用扫描电镜、光学显微镜以及高分辨X射线衍射仪对晶体中的包裹物、开裂、生长条纹和小角晶界缺陷进行了研究。结果表明:温度梯度和热应力是形成晶体中缺陷的主要原因。通过合理设计温场,控制固-液界面的形状及冷却过程的降温速率,可以提高晶体的完整性。

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

LBO晶体上1064，532nm倍频增透膜的镀制及性能分析

用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1064和532nm倍频增透膜，其中一种膜系结构为基底／ZrO2／Y2O3／A12O3／SiO2／空气，另一种为基底／0．5Al2O3／ZrO2／Y2O3／A12O3／SiO2／空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1064和532nm处的反射率均小于0．5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473K的退火处理，

Populações de Chthamalus spp. em costões rochosos da baía da ilha Grande (RJ) e suas relações com o clima entre 2002 e 2012

Poucos organismos são aptos a suportar o alto estresse provocado pelas variações de temperatura e alta dessecação na faixa superior da região entremarés de costões rochosos, sendo um deles o cirripédio Chthamalus. Apesar da sua resistência, vivem constantemente próximos ao seu limite de tolerância fisiológica, o que pode influenciar suas populações. O objetivo deste estudo foi caracterizar as flutuações das populações de Chthamalus spp. na faixa superior da região entremarés em quatro costões rochosos na Baía da Ilha Grande entre 2002 e 2012, relacionando estas variações com os fatores ambientais temperatura do ar, temperatura superficial marinha e precipitação, verificando o potencial destes organismos como indicadores de variações climáticas. Para isso foram investigadas a temperatura do ar e precipitação a partir de dados da estação meteorológica de Angra dos Reis e temperatura da superfície do mar a partir de imagens de satélite (MODIS/AQUA), além das porcentagens de cobertura de Chthamalus spp. a partir de amostragens sazonais. Em geral o estudo indica que as populações foram influenciadas pelas variáveis biológicas recrutamento e competição intraespecífica. Foram verificadas grandes diferenças entre as populações nos costões rochosos estudados. A estação C1, apresentou altas coberturas de cirripédios jovens e adultos ao longo de praticamente todo o período de estudo. Na estação C2 ocorreram as maiores variações, enquanto nas estações C3 e C4 ocorreram coberturas menores e variações menos proeminentes. Estas diferenças provavelmente estiveram ligadas às características físicas de cada costão rochoso. Os anos de 2003 e 2010 foram caracterizados como de altas temperaturas (temperaturas do mar e do ar) quando comparados com os demais anos de estudo. Estes anos foram ainda caracterizados pela ocorrência do fenômeno El Niño, com altas anomalias térmicas, o que indica que este fenômeno climático influenciou as temperaturas da região. Nestes mesmos anos as coberturas de Chthamalus spp. foram relativamente baixas, o que indica que o estresse térmico afetou as populações deste cirripédio. Pode-se inferir através deste estudo que as populações de Chthamalus spp. sofrem influência direta dos fatores ambientais investigados, sendo com isso um potencial indicador de mudanças climáticas.

Efeitos do controle de temperatura e da vimpocetina sobre os déficits neurocomportamentais decorrentes do estresse por separação materna em camundongos suíços neonatos

O estresse durante o desenvolvimento está associado com diversas desordens neurocomportamentais, que podem persistir ao longo da vida. A hiperatividade é um dos transtornos comportamentais que, com maior frequência, observa-se em humanos submetidos ao estresse precoce. Esse transtorno pode ser a manifestação clínica predominante, ou mesclar-se com déficit de atenção, impulsividade e retardo da aprendizagem, constituindo o Transtorno de Déficit de Atenção e Hiperatividade (TDAH), com número de casos diagnosticados em ascensão. Diversos protocolos experimentais utilizam a separação materna (SM) de roedores neonatos para mimetizar as consequências do estresse precoce em humanos. Esta predileção por roedores recém-nascidos se deve à sua equivalência aproximada com fetos humanos no terceiro trimestre da gestação em termos de neurodesenvolvimento, quando ocorre o maior crescimento do Sistema Nervoso Central fetal. Neste trabalho, camundongos suíços neonatos foram submetidos a sessões diárias de isolamento com separação materna, entre o 2 e o 10 dias de vida pós-natal (PN2 a PN10), variando-se a temperatura de isolamento dos filhotes, que permaneciam sem aquecimento (na temperatura do biotério, entre 22 e 25C) ou eram mantidos aquecidos a 37C durante essas sessões. Portanto, foram três grupos experimentais: isolamento aquecido com SM; isolamento não aquecido com SM; e controle. Os animais do grupo controle foram pesados em PN2 e PN10 e, prontamente, devolvidos às progenitoras. Todos os animais foram desmamados e sexados em PN21, não sendo perturbados até a realização dos testes neurocomportamentais, a partir de PN30, que incluíram os Testes de Campo Aberto e de Esquiva Inibitória. Num segundo estudo, foram realizadas dosagens séricas da corticosterona basal e dos hormônios tireoidianos nos três grupos experimentais, em PN6, PN10 e PN30. Finalmente, num terceiro estudo, camundongos do grupo controle e do grupo submetido ao isolamento não aquecido com SM foram tratados com vimpocetina (20g/kg), um neuroprotetor potencial, ou com veículo (Dimetilsulfóxido), a fim de avaliar os efeitos da vimpocetina na atividade locomotora. O 1 estudo demonstrou que a temperatura foi um fator crítico para a manifestação de hiperatividade locomotora no Teste do Campo Aberto, que ocorreu, somente, nos animais do grupo submetido ao isolamento não aquecido. Adicionalmente, não houve diferenças entre os grupos experimentais no Teste da Esquiva Inibitória, quanto à memória e à aprendizagem. O 2 estudo demonstrou que a temperatura do isolamento influenciou os níveis da corticosterona basal e dos hormônios tireoidianos em PN10 e em PN30. No 3 estudo, a vimpocetina reduziu a hiperatividade locomotora no grupo de animais submetidos ao isolamento não aquecido com SM. De todo o exposto, conclui-se que o isolamento com SM de camundongos suíços neonatos à temperatura de 22 a 25C aumentou a atividade locomotora nesses animais, e que a vimpocetina foi capaz de atenuar esse comportamento, sem aumento da mortalidade. Finalmente, considerando-se o maior risco de desenvolvimento do TDAH em crianças e adolescentes com históricos de prematuridade, levanta-se a hipótese de que o estresse térmico pelo frio seja um dos fatores envolvidos na fisiopatogenia da hiperatividade nesses casos.

Increasing the life of flare tips

Flare tips are essential for safety. Maintenance is difficult and costly. Flare tips are subjected to high combustion temperatures, thermal cycling, oxidation and marine corrosion. Following a number of flare tip failures an in depth study by Imperial College was carried out into the failure of a flare tip from a UK platform, looking for service life improvement. Materials selection and design solutions were considered. The study considered alternative materials and concluded that materials selection was the smaller part of the answer; design changes can double service life. This study used failure investigation, high temperature experimental and thermo-mechanical modelling analysis. The modelling process simulated two common flaring conditions and correctly predicted the observed failure of initiation and crack propagation from holes used to bolt on flame stabilizing plates to the top of the flare. The calculated thermal stress and strains enabled the low cycle fatigue life and minimum creep life to be predicted. It was concluded that service life could be improved by replacing Incoloy alloy 800HT (UNS N08800) with Inconel alloy 625 (UNS N06625), an alloy with attractive mechanical properties and improved high temperature corrosion resistance. Repositioning or eliminating bolt holes can double service life. Copyright 2008, Society of Petroleum Engineers.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Study of GaN growth on ultra-thin Si membranes

10 mu m-thick ultra-thin Si (111) membranes for GaN epi-layers growth were successfully fabricated on silicon-on-insulator (SOI) substrate by backside etching the handle Si and buried oxide (BOX) layer. Then 1 mu m-thick GaN layers were deposited on these Si membranes by metal-organic chemical vapor deposition (MOCVD). The crack-free areas of 250 mu m, x 250 mu m were obtained on the GaN layers due to the reduction of thermal stress by using these ultra-thin Si membranes, which was further confirmed by the photoluminescence (PL) spectra and the simulation results from the finite element method calculation by using the software of ANSYS. In this paper, a newly developed approach was demonstrated to utilize micromechanical structures for GaN growth, which would improve the material quality of the epi-layers and facilitate GaN-based micro electro-mechanical system (MEMS) fabrication, especially the pressure sensor, in the future applications. (C) 2008 Elsevier Ltd. All rights reserved.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.

Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Crack-free In0.08Al0.25Ga0.67N quaternary films, with and without thick (> 1.5 mum) high-temperature-GaN (HTGaN) interlayer, have been grown on Si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) system. Mole fractions of In and Al in quaternary alloy layers are determined by Energy dispersive spectroscopy (EDS) and Rutherford backscattering spectrometry (RBS), which are recorded as similar to8% and similar to25-27%, respectively. High-resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RT-PL) results evidence the film's single crystal structure and the existence of local In- and/or Al-rich regions. Compared with GaN film grwon on Si(1 1 1) substrate, no crack is observed in the quaternary ones. Two explanations are proposed. First, mismatch-induced strain is relaxed significantly due to gradual changes of In concentration. Second, the weak In-N bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (C) 2004 Elsevier B.V. All rights reserved.

Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

Wafer bonding between p-Si and an n-InP-based InGaAsP multiple quantum well (MQW) wafer was achieved by a direct wafer bonding method. In order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees C, pair two at 250 degrees C, pair three at 350 degrees C, and pair four at 450 degrees C, respectively. The macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). These strains were measured by the X-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. Normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 Elsevier B.V. All rights reserved.