957 resultados para QCD PHASE-TRANSITION


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We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantum phase of HgTe quantum wells.

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We study the Loschmidt echo (LE) of a coupled system consisting of a central spin and its surrounding environment described by a general XY spin-chain model. The quantum dynamics of the LE is shown to be remarkably influenced by the quantum criticality of the spin chain. In particular, the decaying behavior of the LE is found to be controlled by the anisotropy parameter of the spin chain. Furthermore, we show that due to the coupling to the spin chain, the ground-state Berry phase for the central spin becomes nonanalytical and its derivative with respect to the magnetic parameter lambda in spin chain diverges along the critical line lambda=1, which suggests an alternative measurement of the quantum criticality of the spin chain.

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An in situ energy dispersive x-ray diffraction study on nanocrystalline ZnS was carried out under high pressure up to 30.8 GPa by using a diamond anvil cell. The phase transition from the wurtzite to the zinc-blende structure occurred at 11.5 GPa, and another obvious transition to a new phase with rock-salt structure also appeared at 16.0 GPa-which was higher than the value for the bulk material. The bulk modulus and the pressure derivative of nanocrystalline ZnS were derived by fitting the Birch-Murnaghan equation. The resulting modulus was higher than that of the corresponding bulk material, indicating that the nanomaterial has higher hardness than the bulk material.

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In situ energy dispersive X-ray diffraction measurements on nanocrystalline zinc sulfide have been performed by using diamond anvil cell with synchrotron radiation. There is a phase transition which the ultimate structure is rocksalt when the pressure is up to 16.0GPa. Comparing the structure of body materials, the pressure of the phase transition of nano zinc sulfide is high. We fit the: Birch-Murnaghan equation of state and obtained its ambient pressure bulk modulus and its pressure derivative. The bulk modulus of nanocrystalline zinc sulfide is higher than that of body materials, it indicate that the rigidity of nanocrystalline zinc sulfide is high.

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Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

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The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

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A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

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A shape phase transition is demonstrated to occur in W-190 by applying the projected shell model, which goes beyond the usual mean-field approximation. Rotation alignment of neutrons in the high-j, i(13/2) orbital drives the yrast sequence of the system, changing suddenly from prolate to oblate shape at angular momentum 10h. We propose observables to test the picture.

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Deconfinement phase transition and condensation of Goldstone bosons in neutron star matter are investigated in a chiral hadronic model (also referred as to the FST model) for the hadronic phase (HP) and in the color-flavor-locked (CFL) quark model for the deconfined quark phase. It is shown that the hadronic-CFL mixed phase (MP) exists in the center of neutron stars with a small bag constant, while the CFL quark matter cannot appear in neutron stars when a large bag constant is taken. Color superconductivity softens the equation of state (EOS) and decreases the maximum mass of neutron stars compared with the unpaired quark matter. The K-0 condensation in the CFL phase has no remarkable contribution to the EOS and properties of neutron star matter. The EOS and the properties of neutron star matter are sensitive to the bag constant B, the strange quark mass m(s) and the color superconducting gap Delta. Increasing B and m(s) or decreasing Delta can stiffen the EOS which results in the larger maximum masses of neutron stars.

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Antikaon condensation and deconfinement phase transition in neutron stars are investigated in a chiral hadronic model (also referred as to the FST model) for the hadronic phase and in the MIT bag model for the deconfined quark matter phase. It is shown that the existence of quark matter phase makes antikaon condensation impossible in neutron stars. The properties of neutron stars are sensitive to the bag constant. For the small values of the bag constant, the pure quark matter core appears and hyperons are strongly suppressed in neutron stars, whereas for the large bag constant, the hadron-quark mixed phase exists in the center of neutron stars. The maximum masses of neutron stars with the quark matter phase are lower than those without the quark matter phase; meanwhile, the maximum masses of neutron stars with the quark matter phase increase with the bag constant.