An investigation into the depandance of electrical properties on microstructure in polycrystalline barium titanate

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Intrinsic thresholds in polycrystalline Udimet 720

The long crack threshold behaviour of polycrystalline Udimet 720 has been investigated. Faceted crack growth is seen near threshold when the monotonic crack tip plastic zone is contained within the coarsest grain size. At very high load ratios R (=P min/P max) it is possiblefor the monotonic crack tip plastic zone to exceed the coarsest grain size throughout the entire crack growth regime and non1aceted structure insensitive crack growth is then seen down to threshold. Intrinsic threshold values were obtained for non1aceted and faceted crack growth using a constant K max, increasing K min, computer controlled load shedding technique (K is stress intensity factor). Very high R values are obtained at threshold using this technique (0.75-0.95), eliminating closure effects, so the intrinsic resistance of the material to crack propagation is reflected in these values. The intrinsic non1aceted threshold value ΔK th is lower (2.3 MN m -3/2) than the intrinsicfaceted ΔK th value (4.8 MN m -3/2). This is thought to reflect not only the effect of crack branching and deflection (in the faceted case) on the crack driving force, but also the inherent difference in resistance of the material to the two different crack propagation micromechanisms. © 1993 The Institute of Materials.

Short fatigue crack path determinants in polycrystalline Ni-base superalloys

Fifty seven short fatigue cracks in the Ni-base superalloy AP1 have been examined, to ascertain how the paths taken by growing fatigue cracks are determined. The observations were made on the surface of a smooth specimen, and on the exposed fracture surfaces. Three dimensional reconstructions of the vulnerable microstructures in the vicinity of the cracks were produced. Initiation occurred in mode II, with the lines of intersection of the initiation sites with the specimen top surface orientated at approximately 45° to the tensile axis. These initiation sites developed in slip bands which crossed a large grain and at least one other grain via a grain boundary with a low angle of misorientation. 'River markings' on one of the initiation facets, indicated that the crack first opened from the top centre of the initiation grain. Subsequent to initiation, the growth paths of these cracks are related to the misorientations of the grains and the progress of the crack front.

Effects of hydrostatic tension on cleavage fracture of pure polycrystalline zinc

A study was made of notch effects on the cleavage fracture of polycrystalline zinc. It was seen that the nominal fracture stress of SENB specimens was independent of notch angle. The maximum tensile stress below the notch at fracture in SENB specimens was shown to be different from the tensile stress at fracture in tensile testpieces over a temperature range from −196 to −17°C. The notch root strain at fracture was found to be the same as the uniaxial tensile fracture strain over this temperature interval. These results were interpreted as showing the cleavage fracture of polycrystalline zinc to be shear-stress or initiation controlled, as predicted by Stroh's dislocation model of cleavage.

Unfolding grain size effects in barium titanate ferroelectric ceramics

Grain size effects on the physical properties of polycrystalline ferroelectrics have been extensively studied for decades; however there are still major controversies regarding the dependence of the piezoelectric and ferroelectric properties on the grain size. Dense BaTiO3 ceramics with different grain sizes were fabricated by either conventional sintering or spark plasma sintering using micro- and nano-sized powders. The results show that the grain size effect on the dielectric permittivity is nearly independent of the sintering method and starting powder used. A peak in the permittivity is observed in all the ceramics with a grain size near 1μm and can be attributed to a maximum domain wall density and mobility. The piezoelectric coefficient d33 and remnant polarization Pr show diverse grain size effects depending on the particle size of the starting powder and sintering temperature. This suggests that besides domain wall density, other factors such as back fields and point defects, which influence the domain wall mobility, could be responsible for the different grain size dependence observed in the dielectric and piezoelectric/ferroelectric properties. In cases where point defects are not the dominant contributor, the piezoelectric constant d33 and the remnant polarization Pr increase with increasing grain size.

Effect of methane concentration in hydrogen plasma on hydrogen impurity incorporation in thick large-grained polycrystalline diamond films

We investigate the impact of methane concentration in hydrogen plasma on the growth of large-grained polycrystalline diamond (PCD) films and its hydrogen impurity incorporation. The diamond samples were produced using high CH4 concentration in H2 plasma and high power up to 4350 W and high pressure (either 105 or 110 Torr) in a microwave plasma chemical vapor deposition (MPCVD) system. The thickness of the free-standing diamond films varies from 165 µm to 430 µm. Scanning electron microscopy (SEM), micro-Raman spectroscopy and Fourier-transform infrared (FTIR) spectroscopy were used to characterize the morphology, crystalline and optical quality of the diamond samples, and bonded hydrogen impurity in the diamond films, respectively. Under the conditions employed here, when methane concentration in the gas phase increases from 3.75% to 7.5%, the growth rate of the PCD films rises from around 3.0 µm/h up to 8.5 µm/h, and the optical active bonded hydrogen impurity content also increases more than one times, especially the two CVD diamond specific H related infrared absorption peaks at 2818 and 2828 cm−1 rise strongly; while the crystalline and optical quality of the MCD films decreases significantly, namely structural defects and non-diamond carbon phase content also increases a lot with increasing of methane concentration. Based on the results, the relationship between methane concentration and diamond growth rate and hydrogen impurity incorporation including the form of bonded infrared active hydrogen impurity in CVD diamonds was analyzed and discussed. The effect of substrate temperature on diamond growth was also briefly discussed. The experimental findings indicate that bonded hydrogen impurity in CVD diamond films mainly comes from methane rather than hydrogen in the gas source, and thus can provide experimental evidence for the theoretical study of the standard methyl species dominated growth mechanism of CVD diamonds grown with methane/hydrogen mixtures.

Implications of TiO2 surface functionalization on polycrystalline mixed halide perovskite films and photovoltaic devices

We exploit TiO2 surface functionalization as a tool to induce the crystallization process of CH3NH3PbI3xClx perovskite thin films resulting in a reduction of the degree of orientation of the (110) crystallographic planes. Notably, the variation of the film crystalline orientational order does not affect the photovoltaic performances of the perovskite-based devices, whose efficiency remains mostly unchanged. Our findings suggest that other factors are more significant in determining the device efficiency, such as the non-homogenous coverage of the TiO2 surface causing charge recombination at the organic/TiO2 interface, defect distribution on the perovskite bulk and at the interfaces, and transport in the organic or TiO2 layer. This observation represents a step towards the comprehension of the perovskite film peculiarities influencing the photovoltaic efficiency for high performance devices.

Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure

In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused.

Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure

In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused.

Anomalous resistivity at the structural phase transition of polycrystalline SnTe

An excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition.

Properties of polycrystalline gas sensors based on d.c. and a.c. electrical measurements

Electrical properties of polycrystalline gas sensors are analyzed by d.c. and a.c. measurements. d.c. electrical conductivity values compared with those obtained by admittance spectroscopy methods help to obtain a detailed 'on line' analysis of conductivity-modulated gas sensors. The electrical behaviour of grain boundaries is obtained and a new design of sensors can be achieved by enhancing the activity of surface states in the detecting operation. A Schottky barrier model is used to explain the grain boundary action under the presence of surrounding gases. The height of this barrier is a function of gas concentration due to the trapping of excess charge generated by gas adsorption at the interface. A comparison between this dependence, and a plot of the real and imaginary components of the admittance versus frequency at different gas concentrations, provides information on the different parameters that play a role in the conduction mechanisms. These methods have been applied to the design of a CO sensor based on tin oxide films for domestic purposes, the characteristics of which are presented.