Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure
Data(s) |
26/06/2015
26/06/2015
2000
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Resumo |
In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused. |
Identificador |
0-7803-5815-5 AUT: HGO00803; ARO00704; |
Idioma(s) |
eng |
Publicador |
IEEE |
Relação |
P-001-27N |
Direitos |
restrictedAccess |
Tipo |
conferenceObject |