Influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films

Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by spin coating from the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500 degreesC for 3 h. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant and dissipation factor were measured in frequency region from 10 Hz to 10 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed. (C) 2003 Elsevier Ltd. All rights reserved.

Photoluminescent behavior of SrZrO3/SrTiO3 multilayer thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Very Intense Distinct Blue and Red Photoluminescence Emission in MgTiO3 Thin Films Prepared by the Polymeric Precursor Method: An Experimental and Theoretical Approach

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of oxidizing atmosphere on ferroelectric and piezoelectric response of CaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural study of thin films prepared from tungstate glass matrix by Raman and X-ray absorption spectroscopy

Thin films were prepared using glass precursors obtained in the ternary system NaPO(3)-BaF(2)-WO(3) and the binary system NaPO(3)-WO(3) with high concentrations of WO(3) (above 40% molar). Vitreous samples have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. Several structural characterizations were performed by Raman spectroscopy and X-ray Absorption Near Edge Spectroscopy (XANES) at the tungsten L(I) and L(III) absorption edges. XANES investigations showed that tungsten atoms are only sixfold coordinated (octahedral WO(6)) and that these films are free of tungstate tetrahedral units (WO(4)). In addition, Raman spectroscopy allowed identifying a break in the linear phosphate chains as the amount of WO(3) increases and the formation of P-O-W bonds in the films network indicating the intermediary behavior of WO(6) octahedra in the film network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed identifying the presence of W-O and W=O terminal bonds and a progressive apparition of W-O-W bridging bonds for the most WO(3) concentrated samples (above 40% molar) attributed to the formation of WO(6) clusters. (C) 2008 Elsevier B.V. All rights reserved.

Visible emission from Er-doped SnO2 thin films deposited by sol-gel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Epitaxially grown LiNbO3 thin films by polymeric precursor method

LiNbO3 thin films were grown on (0001) sapphire substrates by a chemical route, using the polymeric precursor method. The overall process consists of preparing a coating solution from the Pechini process, based on metallic citrate polymerization, the precursor films, deposited by dip coating, are then heat treated to eliminate the organic material and to synthesize the phase. In this work, we studied the influence of the heat treatment on the structural and optical properties of single-layered films. Two routes were also investigated to increase the film thickness: increasing the viscosity of the coating solution and/or increasing the number of successively deposited layers. The x-ray diffraction theta -2 theta scans revealed the c-axis orientation of the single- and multilayered films and showed that efficient crystallization can be obtained at temperatures as low as 400 degreesC, the phi-scan diffraction evidenced the epitaxial growth with two in-plane variants, A microstructural study revealed that the films were crack free, homogeneous, and relatively dense. Finally, the investigation of the optical properties (optical transmittance and refractive index) confirmed the good quality of the films. These results indicate that the polymeric precursor method is a promising process to develop lithium niobate waveguides.

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga10Ge25S65 with 4 mu m thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 mu m (Delta V/V approximate to 30%) is observed for composition Ga10Ge25S65 exposed during 180 min and 3 mW/cm(2) power density. The optical absorption edge measured for the film Ge25Ga10S65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Delta E-g = 440 meV) than Delta E-g induced by above bandgap illumination (Delta E-g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Delta n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented. (c) 2005 Elsevier B.V. All rights reserved.

Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thin films prepared from tungstate glass matrix

Vitreous samples containing high concentrations of WO3 (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO3. These amorphous thin films of about 4 mu m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO3 microcrystals in the amorphous phase. (C) 2007 Elsevier B.V. All rights reserved.

LiNbO3 thin films prepared from a polymeric precursor method

LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.

Preparation and characterization of SrBi2Nb2O9 thin films made by polymeric precursors

A polymeric precursor solution was employed in preparing SrBi2Nb2O9 (SBN) powder and thin films dip coated onto Si(100) substrate. XRD results show that the SBN perovskite phase forms at temperatures as low as 600°C through an intermediate fluorite phase. This fluorite phase is observed for samples heat-treated at temperatures of 400 and 500°C. After heat treatment at temperatures ranging from 300 to 800°C, thin films were shown to be crack free. Grazing incident angle XRD characterization shows the occurrence of the fluorite intermediate phase for films also. The thickness of films, measured by MEV, was in the order of 80-100 nm.

Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique

Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect bandgap transition with energy of ≅ 3.5 eV. Conductance as function of temperature indicates two levels of capture with 39 and 81 meV as activation energies, which may be related to an Sb donor and oxygen vacancy respectively. Electron trapping by these levels are practically destroyed by UV photoexcitation (305 nm) and heating in vacuum to 200°C. Gas analysis using a mass spectrometer indicates an oxygen related level, which may not be desorbed in the simpler O2 form.