Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique


Autoria(s): Messias, Fábio R.; Scalvi, Luis Vicente de Andrade; Li, M. Siu; Santilli, C. V.; Pulcinelli, S. H.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

01/12/1998

Resumo

Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect bandgap transition with energy of ≅ 3.5 eV. Conductance as function of temperature indicates two levels of capture with 39 and 81 meV as activation energies, which may be related to an Sb donor and oxygen vacancy respectively. Electron trapping by these levels are practically destroyed by UV photoexcitation (305 nm) and heating in vacuum to 200°C. Gas analysis using a mass spectrometer indicates an oxygen related level, which may not be desorbed in the simpler O2 form.

Formato

199-206

Identificador

http://dx.doi.org/10.1080/10420159808220291

Radiation Effects and Defects in Solids, v. 146, n. 1-4, p. 199-206, 1998.

1042-0150

http://hdl.handle.net/11449/65590

10.1080/10420159808220291

WOS:000079993400017

2-s2.0-0032308896

Idioma(s)

eng

Relação

Radiation Effects and Defects in Solids

Direitos

closedAccess

Palavras-Chave #Optical absorption #Oxygen vacancy #Photoconductivity #Tin dioxide #Traps #Wide gap semiconductor #Activation energy #Borosilicate glass #Coating techniques #Desorption #Electric conductance #Heating #Mass spectrometers #Semiconducting tin compounds #Semiconductor growth #Sol-gels #Thin films #Ultraviolet radiation #Electron trapping #Photodesorption #Sol-gel dip-coating techniques #Semiconducting films
Tipo

info:eu-repo/semantics/article