Theoretical study of Talbot-like bands observed using a laser diode below threshold

We report on a theoretical study of an interferometric system in which half of a collimated beam from a broadband optical source is intercepted by a glass slide, the whole beam subsequently being incident on a diffraction grating and the resulting spectrum being viewed using a linear CCD array. Using Fourier theory, we derive the expression of the intensity distribution across the CCD array. This expression is then examined for non-cavity and cavity sources for different cases determined by the direction from which the slide is inserted into the beam and the source bandwidth. The theoretical model shows that the narrower the source linewidth, the higher the deviation of the Talbot bands' visibility (as it is dependent on the path imbalance) from the previously known triangular shape. When the source is a laser diode below threshold, the structure of the CCD signal spectrum is very complex. The number of components present simultaneously increases with the number of grating lines and decreases with the laser cavity length. The model also predicts the appearance of bands in situations not usually associated with Talbot bands.

Talbot-like bands for a laser diode below threshold

We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.

A frequency locked laser diode for interferometric sensing systems

Interferometric sensors for slowly varying measurands, such as temperature or pressure, require a long term frequency stability of the source. We describe a system for frequency locking a laser diode to an atomic transition in a hollow cathode lamp using the optogalvanic effect.

Self-seeded gain-switched operation of an InGaN MQW laser diode

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Theoretical study of Talbot-like bands observed using a laser diode below threshold

We report on a theoretical study of an interferometric system in which half of a collimated beam from a broadband optical source is intercepted by a glass slide, the whole beam subsequently being incident on a diffraction grating and the resulting spectrum being viewed using a linear CCD array. Using Fourier theory, we derive the expression of the intensity distribution across the CCD array. This expression is then examined for non-cavity and cavity sources for different cases determined by the direction from which the slide is inserted into the beam and the source bandwidth. The theoretical model shows that the narrower the source linewidth, the higher the deviation of the Talbot bands' visibility (as it is dependent on the path imbalance) from the previously known triangular shape. When the source is a laser diode below threshold, the structure of the CCD signal spectrum is very complex. The number of components present simultaneously increases with the number of grating lines and decreases with the laser cavity length. The model also predicts the appearance of bands in situations not usually associated with Talbot bands.

Talbot-like bands for a laser diode below threshold

We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.

A novel tunable all-optical incoherent negative-tap fiber-optic transversal filter based on a DFB laser diode and fiber Bragg grating

We demonstrate experimentally a novel and simple tunable all-optical incoherent negative-tap fiber-optic transversal filter based on a distribution feedback laser diode and high reflection fiber Bragg gratings (FBGs). In this filter, variable time delay is provided by cascaded high reflection fiber Bragg gratings (FBGs), and the tuning of the filter is realized by tuning different FBG to match the fixed carrier wavelength, or adjusting the carrier wavelength to fit different FBG. The incoherent negative tapping is realized by using the carrier depletion effect in a distribution feedback laser diode.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

A compact all-room-temperature frequency-doubling scheme generating cw orange light with a periodically poled potassium titanyl phosphate waveguide and a quantum-dot external cavity diode laser is demonstrated. A frequency-doubled power of up to 4.3 mW at the wavelength of 612.9 nm with a conversion efficiency exceeding 10% is reported. Second harmonic wavelength tuning between 612.9 nm and 616.3 nm by changing the temperature of the crystal is also demonstrated. © Springer-Verlag 2010.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

Optical trapping with superfocused high-M2 laser diode beam

Many applications of high-power laser diodes demand tight focusing. This is often not possible due to the multimode nature of semiconductor laser radiation possessing beam propagation parameter M2 values in double-digits. We propose a method of 'interference' superfocusing of high-M2 diode laser beams with a technique developed for the generation of Bessel beams based on the employment of an axicon fabricated on the tip of a 100 μm diameter optical fiber with highprecision direct laser writing. Using axicons with apex angle 140º and rounded tip area as small as 10 μm diameter, we demonstrate 2-4 μm diameter focused laser 'needle' beams with approximately 20 μm propagation length generated from multimode diode laser with beam propagation parameter M2=18 and emission wavelength of 960 nm. This is a few-fold reduction compared to the minimal focal spot size of 11 μm that could be achieved if focused by an 'ideal' lens of unity numerical aperture. The same technique using a 160º axicon allowed us to demonstrate few-μm-wide laser 'needle' beams with nearly 100 μm propagation length with which to demonstrate optical trapping of 5-6 μm rat blood red cells in a water-heparin solution. Our results indicate the good potential of superfocused diode laser beams for applications relating to optical trapping and manipulation of microscopic objects including living biological objects with aspirations towards subsequent novel lab-on-chip configurations.

Low-linewidth and tunable single frequency 1x2 multimode-interferometer-Fabry-Perot laser diode

In this paper, we present a novel 1x2 multi-mode-interferometer-Fabry-Perot (MMI-FP) laser diode, which demonstrated tunable single frequency operation with more than 30dB side mode suppression ratio (SMSR) and a tuning range of 25nm in the C and L bands, as well as a 750 kHz linewidth. These lasers do not require material regrowth and high resolution gratings; resulting in a simpler process that can significantly increase the yield and reduce the cost.

用于大范围高精度实时位移测量的半导体激光干涉仪

现有的半导体激光干涉仪存在测量精度与测量范围的矛盾。本文提出一种新的实时位移测量半导体激光干涉仪，并分析了干涉仪的测量原理。首先提出一种新的解相算法，它通过两路实时相位探测电路从干涉信号中得到待测量相位，消除了光强波动、初始光程差、电路放大倍数、调制深度、Bessel函数等参数对测量精度的影响，提高了测量精度。其次，提出一种扩大测量范围的技术，并用解包裹电路得到真实相位和待测量的位移, 将测量范围从半个波长提高到几个波长。在实验中，测得喇叭的峰峰值为2361.7nm，重复测量精度为2.56nm，测量时间为

实时测量表面形貌的正弦相位调制半导体干涉仪

提出一种实时测量表面形貌的正弦相位调制半导体激光干涉仪。利用实时相位检测电路，从正弦相位调制干涉信号中解出被测量物体表面形貌的相位。在实验中，测量了楔形光学平板的表面形貌，对表面形貌上的60

消除正弦相位调制干涉仪中光强调制影响的全光纤干涉仪

在激光二极管(LD)正弦相位调制(LD-SPM)干涉仪中,通过注入电流调制激光二极管波长的同时,光源输出的光强也被调制,成为测量误差的主要来源之一。提出一种新的消除激光二极管正弦相位调制干涉仪中光强调制影响的干涉仪,给出了具体的理论分析。该干涉仪采用全光纤结构,有效减小外界干扰对干涉测量的影响;采用容易实现的前置信号处理电路和实时相位检测器对干涉信号进行处理,消除了激光二极管光强调制产生的测量误差;同时实现了物体微小位移的高精度实时测量,测量的重复精度达到1 nm。实验结果与其他消除光强调制影响的方法测得