Self-seeded gain-switched operation of an InGaN MQW laser diode
| Contribuinte(s) |
Lenstra, Daan Morthier, Geert Erneux, Thomas Pessa, Markus |
|---|---|
| Data(s) |
03/09/2004
|
| Resumo |
Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm. |
| Formato |
application/pdf |
| Identificador |
http://eprints.aston.ac.uk/18337/1/Self_seeded_gain_switched_operation.pdf Hu, Youfang; Dubov, Mykhaylo and Khrushchev, Igor (2004). Self-seeded gain-switched operation of an InGaN MQW laser diode. IN: Semiconductor lasers and laser dynamics. Lenstra, Daan; Morthier, Geert; Erneux, Thomas and Pessa, Markus (eds) SPIE proceedings . SPIE. |
| Publicador |
SPIE |
| Relação |
http://eprints.aston.ac.uk/18337/ |
| Tipo |
Book Section NonPeerReviewed |
