961 resultados para High purity
Resumo:
Iron deficiency can induce cyanobacteria to synthesize siderophore receptor proteins on the outer membrane to enhance the uptake of iron. In this study, an outer membrane of high purity was prepared from Anabaena sp. PCC 7120 based on aqueous polymer two-phase partitioning and discontinuous sucrose density ultra-centrifugation, and the induction of outer membrane proteins by iron deficiency was investigated using 2-D gel electrophoresis. At least. five outer membrane proteins were newly synthesized or significantly up-regulated in cells transferred to iron-deficient conditions, which were all identified to be siderophore receptor proteins according to MALDI-TOF-MS analyses. Bacterial luciferase reporter genes luxAB were employed to monitor the transcription of the encoding genes. The genes were induced by iron deficiency at the transcriptional level in different responsive modes. Luciferase activity expressed from an iron-regulated promoter may be used as a bioreporter for utilizable iron in natural water samples. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.
Resumo:
A monolithic design is proposed for low-noise sub-THz signal generation by integrating a reflector onto a dual laser source. The reflectivity and the position of such a reflector can be adjusted to obtain constructive feedback from the reflector to both lasers, thus causing a Vernier feedback effect. As a result, 10-fold line narrowing, the narrowing being limited by the resolution of the simulation, is predicted using a transmission line model. Finally, a simple control scheme using an electrical feedback loop to adjust laser biases is proposed to maintain the line narrowing performance. This line narrowing technique, comprising a passive integrated reflector, could allow the development of a low-cost, compact and energy-efficient solution for high-purity sub-THz signal generation. © The Institution of Engineering and Technology 2014.
Resumo:
Composite AlN powder, mixed with the sintering additive Y2O3, was synthesized by the direct nitridation of molten Al-Mg-Y alloys. The character of products was determined by means of electron microscopy, X-ray diffraction, granularmetric analysis and chemical composition analysis etc. The results show that the nitridation rate of the raw alloys is higher, and the nitridation products axe porous enough to be easily crushed. Composite AlN powder, obtained by the Lanxide method, has excellent characters such as high purity, especially low oxygen content, and narrow well-distributed grain size and so on.
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We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate.These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.
Resumo:
Using Al-Mg and Al-Mg-Y alloys as raw materials and nitrogen as gas reactants, AIN powders and composite AIN powders by in-situ synthesis method were prepared. AIN lumps prepared by the nitriding of Al-Mg and Al-Mg-Y alloys have porous microstructure, which is favorable for pulverization. They have high purity, containing 1.23 % (mass fraction) oxygen impurity, and consisted of AIN single phase . The average particle size of AIN powders is 6.78 mum. Composite AlN powders consist of AlN phases and rare, earth oxide Y2O3 phase. The distribution of particle size of AIN powders shows two peaks. In view, of packing factor, AIN powders with such size distribution can easily be sintered to high density.
Resumo:
ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.
Resumo:
A monolithic structured polymer preform was formed by in-situ chemical polymerization of high-purity MMA monomer in a home-made mould. The conditions for fabrication of the preforms were optimized and the preform was drawn to microstructured polymer optical fibre. The optical properties of the resultant elliptical-core fibre were measured. This technique provides advantages over alternative preform fabrication methods such as drilling and capillary stacking, which are less suitable for mass production. (c) 2006 Optical Society of America.
Resumo:
The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.
Resumo:
Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
Resumo:
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
Resumo:
Four high-purity germanium 4-fold segmented Clover detectors have been applied in the experiment of neutron-rich nucleus N-21. The performance of those, four Clovers have been tested with radioactive sources and in-beam experiments and the main results including energy resolution, peak-to-total ratios, the variation of the hit pattern distribution in difficult crystals of one Clover detector with the energy of gamma ray, and absolute full energy peak detection efficiency curve, were presented.
Resumo:
Rare-earth ions (Eu3+, Tb3+) doped AMoO(4) (A = Sr, Ba) particles with uniform morphologies were successfully prepared through a facile solvothermal process using ethylene glycol (EG) as protecting agent. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) spectra and the kinetic decays were performed to characterize these samples. The XRD results reveal that all the doped samples are of high purity and crystallinity and assigned to the tetragonal scheelite-type structure of the AMoO(4) phase. It has been shown that the as-synthesized SrMoO4:Ln and BaMoO4:Ln samples show respective uniform pea nut-like and oval morphologies with narrowsize distribution. The possible growth process of the AMoO(4):Ln has been investigated in detail. The EG/H2O volume ratio, reaction temperature and time have obvious effect on themorphologies and sizes of the as-synthesized products.
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The extraction behaviour of Ce(IV), Th(IV) and part of RE(III), viz., La, Ce, Nd and Yb, has been investigated using di(2-ethylhexyl) 2-ethylhexyl phosphonate (DEHEHP,B) in heptane as an extractant. Results show that extractability varies in the order: Ce(IV) > Th(IV) much greater than RE(III). Therefore, it is possible to find the appropriate conditions under which Ce(IV) can be effectively separated from Th(IV) and RE(III). Furthermore, stripping Ce(IV) from the loaded organic phase can be carried out by dilute H2SO4 with an aliquot of H2O2.Roasted bastnasite made in Baotou (China) by Na2CO3 and leached by HNO3, there is about 50% Ce mainly as tetravalent nitrate along with other RE(III) and Th(IV) in the leachings. Through fractional extraction, taking nitric acid leachings of roasted Bastnasite as feed and DEHEHP as an extractant, we can obtain the CeO2 products with high purity of 99.9-99.99%, with a yield of >85%, in which ThO2/CeO2 < 10(-4).
Resumo:
Ethylene polymerization was carried out with zirconocene catalysts supported on montmorillonite (or functionalized montmorillonite). The functionalized montmorillonite was from simple ion exchange of [CH3O2CCH2NH3](+) (MeGlyH(+)) ions with interlamellar cations of layered montmorillonites. The functionalized montmorillonlites [high-purity montmorillonite (MMT)-MeGlyH(+)] had larger interlayer spacing (12.69 Angstrom) than montmorillonites without treatment (9.65 Angstrom). The zirconocene catalyst system [Cp2ZrCl2/methylaluminoxane (MAO)/MMT-MeGlyH(+)] had much higher Zr loading and higher activities than those of' other zirconocene catalyst systems (Cp2ZrCl2/MMT, Cp2ZrCl2/MMT-MeGlyH(+), Cp2ZrCl2/MAO/MMT, [CP2ZrCl](+)[BF4]/MMT, [Cp2ZrCl][BF4](-)/MMT-MeGlyH(+), [CP2ZrCl](+)[BF4](-)/MAO/MMT-MeGlyH(+), and [Cp2ZrCl](+)[BF4](-)/MAO/MMT). The polyethylenes with good bulk density were obtained from the catalyst systems, particularly (CP2ZrCl2/MAO/MMT-MeGlyH(1)). MeGlyH(+) and MAO seemed to play important roles for preparation of the supported zirconocenes and polymerization of ethylene. The difference in Zr loading and catalytic activity among the supported zirconocene catalysts is discussed.