Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Effect of electric stimulation on heart beat and body muscle in fish

The effect of AC and DC electric stimulations on the heart-rate and the entire body of Heteropneustis fossillis, Tilapia mossambica and Macrobrachium rosenbergii were studied and presented in kymograph tracings. The reaction of spinal cord in Puntius ticto, Heteropneustis fossilis and Tilapia mossambica to D. C. field was observed to find out its role in electric shocks. A test-check of the electrical resistance of a few species was also conducted. The effect of D. C. and A.C. on the body muscle was found to be the same as that in the case of frog. Different degrees of cardiac slowing were observed in AC and DC. Unbalanced galvanotropic movements were also noticed in spinal fishes.

Magnetic sensor with compensation for lead and coil resistance

A measurement system for magnetic fields or electric currents uses a single-core fluxgate, magneto-inductive or magneto-impedance device driven from a radio frequency excitation source. Flux nulling feedback circuitry is provided to maintain the core of the sensor at substantially zero net flux and improve the linearity and dynamic response of the sensor system. A high pass filter is provided for reducing the dc effects of the ohmic resistance of the coil and lead wires on the effectiveness of the flux nulling feedback.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices

We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the temperature can induce current self-oscillations. This observation can be attributed to the negative differential resistance (NDR) effect. Transverse magnetic field and the temperature can increase the NDR of a doped SL. A large NDR can lead to an unstable EFD in a certain range of d.c. bias. (C) 1999 Elsevier Science Ltd. All rights reserved.

Abnormal photoabsorption in high resistance GaN epilayer

Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices

The crossover between two regimes has been observed in the vertical electric transport of weakly coupled GaAs/AlAs superlattices (SLs). At fixed d.c. bias, the SLs can be triggered by illumination to switch from a regime of temporal current oscillation to the formation of a stable electric field domain. The conversion can be reversed by raising the sample temperature to about 200 K. An effective carrier injection model is proposed to explain the conversion processes, taking into account the contact resistance originating from DX centres in the n(+)-Al0.5Ga0.5As contact layers which is sensitive to light illumination and temperature. In addition, quasiperiodic oscillations have been observed at a particular d.c. bias voltage.

Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field

We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Surface Insulation Resistance Degradation and Electrochemical Migration on Printed Circuit Boards

Widespread adoption of lead-free materials and processing for printed circuit board (PCB) assembly has raised reliability concerns regarding surface insulation resistance (SIR) degradation and electrochemical migration (ECM). As PCB conductor spacings decrease, electronic products become more susceptible to these failures mechanisms, especially in the presence of surface contamination and flux residues which might remain after no-clean processing. Moreover, the probability of failure due to SIR degradation and ECM is affected by the interaction between physical factors (such as temperature, relative humidity, electric field) and chemical factors (such as solder alloy, substrate material, no-clean processing). Current industry standards for assessing SIR reliability are designed to serve as short-term qualification tests, typically lasting 72 to 168 hours, and do not provide a prediction of reliability in long-term applications. The risk of electrochemical migration with lead-free assemblies has not been adequately investigated. Furthermore, the mechanism of electrochemical migration is not completely understood. For example, the role of path formation has not been discussed in previous studies. Another issue is that there are very few studies on development of rapid assessment methodologies for characterizing materials such as solder flux with respect to their potential for promoting ECM. In this dissertation, the following research accomplishments are described: 1). Long-term temp-humidity-bias (THB) testing over 8,000 hours assessing the reliability of printed circuit boards processed with a variety of lead-free solder pastes, solder pad finishes, and substrates. 2). Identification of silver migration from Sn3.5Ag and Sn3.0Ag0.5Cu lead-free solder, which is a completely new finding compared with previous research. 3). Established the role of path formation as a step in the ECM process, and provided clarification of the sequence of individual steps in the mechanism of ECM: path formation, electrodeposition, ion transport, electrodeposition, and filament formation. 4). Developed appropriate accelerated testing conditions for assessing the no-clean processed PCBs' susceptibility to ECM: a). Conductor spacings in test structures should be reduced in order to reflect the trend of higher density electronics and the effect of path formation, independent of electric field, on the time-to-failure. b). THB testing temperatures should be modified according to the material present on the PCB, since testing at 85oC can cause the evaporation of weak organic acids (WOAs) in the flux residues, leading one to underestimate the risk of ECM. 5). Correlated temp-humidity-bias testing with ion chromatography analysis and potentiostat measurement to develop an efficient and effective assessment methodology to characterize the effect of no-clean processing on ECM.

Design and Evaluation of a Retrofittable Electric Snow Melting System for Pavements

Gemstone Team SnowMelt

High electric current density-induced interfacial reactions in micro ball grid array (μBGA) solder joints

The effect of a high electric current density on the interfacial reactions of micro ball grid array solder joints was studied at room temperature and at 150 °C. Four types of phenomena were reported. Along with electromigration-induced interfacial intermetallic compound (IMC) formation, dissolution at the Cu under bump metallization (UBM)/bond pad was also noticed. With a detailed investigation, it was found that the narrow and thin metallization at the component side produced “Joule heating” due to its higher resistance, which in turn was responsible for the rapid dissolution of the Cu UBM/bond pad near to the Cu trace. During an “electromigration test” of a solder joint, the heat generation due to Joule heating and the heat dissipation from the package should be considered carefully. When the heat dissipation fails to compete with the Joule heating, the solder joint melts and molten solder accelerates the interfacial reactions in the solder joint. The presence of a liquid phase was demonstrated from microstructural evidence of solder joints after different current stressing (ranging from 0.3 to 2 A) as well as an in situ observation. Electromigration-induced liquid state diffusion of Cu was found to be responsible for the higher growth rate of the IMC on the anode side.