Effect of microbial biofilm in the nursery phase of mrigal, Cirrhinus mrigala

The experiment was conducted for 35 days in nine cement tubs (1 x 1 x 1 m) having 15 cm sandy-loam soil base with three treatments in triplicate, viz., cow dung alone at the rate of 1 kg/tub (T sub(1)), cow dung at 1 kg/tub and feed at 10% body wt/d in two meals (T sub(2)), and cow dung at 1 kg and paddy straw at 200 g/tub (T sub(3)). Both manure and substrate were added on dry weight basis. All the tubs were stocked with 10 fry each mrigal (100,000/ha) of average weight of 0.09 g, seven days after the addition of manure and substrate. The total plate count of bacteria in water did not vary much between the treatments and the mean values were 5.13, 5.49 and 5.85 (CFU x 10 super(4)/ml) in T sub(1) T sub(2) and T sub(3) respectively. The number of phytoplankters and zooplankters in water differed significantly between the treatments. The average number of attached algae (no./cm³) and fish food organisms (no./cm³) recorded on the substrate were 145.28 and 70.67, respectively. The mean final weight of mrigal differed significantly (P < 0.05) between the treatments with T sub(3) registering the highest value of 6.93 g followed by T sub(2) (5.01 g) and T sub(1) (3.37 g). The specific growth rate and growth increment of fish also followed the same trend as that of weight recorded in the different treatments. Survival was higher in T sub(2) (83.33%), followed by T sub(3) (80.00%) and T sub(1) (76.67%). The study demonstrates that by the introduction of biodegradable substrates like paddy straw into the culture systems, significantly higher growth and survival can be obtained in the nursery rearing of mrigal.

Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells

The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions.

Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si

The tribological behaviors and phase transformation of single crystal silicon against Si3N4, Ruby and steel were investigated in this study. It was found that the strong chemical action between silicon and Fe was the key factor to the tribological behavior of silicon as slid against steel. SEM and Raman spectroscopy indicated that phase transformation of single crystal silicon occurred during the running-in period at low sliding velocity as slid against Si3N4 and Ruby. and gave birth to single or a mixture phase of Si-III, Si-XII and amorphous silicon. The high hardness of counterpart and the absence of chemical action between silicon and counterpart facilitated the phase transformation of single crystal silicon. (C) 2008 Elsevier Ltd. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Deep trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. The DLTS spectrum has a dominant peak D-1 with an activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. In order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of DLTS signals. It was found that the longer the heat treatment duration is, the lower the amplitude of DLTS peaks become. This suggests that the decrease of the DLTS signal originates from hydrogen atom outgoing from the film during the annealing process. The possible originality of multiple trap levels was discussed in terms of the Mg-N-H complex. (C) 2000 American Vacuum Society. [S0734-2101(00)01701-2].

Wurtzite-to-tetragonal structure phase transformation and size effect in ZnO nanorods

The deformation of [0001]-oriented ZnO nanorods with hexagonal cross sections under uniaxial tensile loading is analyzed through molecular statistical thermodynamics (MST) simulations. The focus is on the size dependence of mechanical behavior in ZnO nanorods with diameters ranging from 1.95 to 17.5 nm. An irreversible phase transformation from the wurtzite (P6(3)mc space group) structure to a tetragonal structure (P4(2)/mnm space group) occurs during the tensile loading process. Young's modulus before the transformation demonstrates a size dependence consistent with what is observed in experiments. A stronger size dependence of response is seen after the transformation and is attributed to the polycrystalline nature of the transformed structure. A comparison of the MST and molecular dynamics (MD) methods shows that MST is 60 times faster than MD and yields results consistent with the results of MD.

Effect of phase relaxation on quantum superpositions in complex collisions

We study the effect of phase relaxation on coherent superpositions of rotating clockwise and anticlockwise wave packets in the regime of strongly overlapping resonances of the intermediate complex. Such highly excited deformed complexes may be created in binary collisions of heavy ions, molecules, and atomic clusters. It is shown that phase relaxation leads to a reduction of the interference fringes, thus mimicking the effect of decoherence. This reduction is crucial for the determination of the phase-relaxation width from the data on the excitation function oscillations in heavy-ion collisions and bimolecular chemical reactions. The difference between the effects of phase relaxation and decoherence is discussed.