Super-resolution scanning laser microscopy with a third-order optical nonlinear thin film

In a configuration of optical far-field scanning microscopy, super-resolution achieved by inserting a third-order optical nonlinear thin film is demonstrated and analyzed in terms of the frequency response function. Without the thin film the microscopy is diffraction limited; thus, subwavelength features cannot be resolved. With the nonlinear thin film inserted, the resolution is dramatically improved and thus the microscopy resolves features significantly smaller than the smallest spacing allowed by the diffraction limit. A theoretical model is established and the device is analyzed for the frequency response function. The results show that the frequency response function exceeds the cutoff spatial frequency of the microscopy defined by the laser wavelength and the numerical aperture of the convergent lens. The main contribution to the improvement of the cutoff spatial frequency is from the phase change induced by the complex transmission of the nonlinear thin film. Experimental results are presented and are shown to be consistent with the results of theoretical simulations.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Laser pulse induced bumps in chalcogenide phase change films

Formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. The process involves basically fast heating and quenching stages. Circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. In extreme cases, holes are formed at the apex of the bumps. To understand the bumps and their formation is of great interest for data storage. In the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. Simulations based on the analytic solution are carried out taking Ag8In14Sb55Te23 as an example. The results are verified with experimental observations of the bumps. (C) 2008 American Institute of Physics.

Laser tunable Toraldo superresolution with a uniform nonlinear pupil filter

We demonstrate that it is possible to reduce the focal spot size by inserting a uniform nonlinear thin film at the aperture of a focusing lens. The reduction of spot size is tunable by adjusting the incoming laser power. In comparison with the original diffraction spot, the transverse spot size can be reduced 0.65 times. The nonlinear thin film acts effectively as a Toraldo filter, and the phase and amplitude modulation stems from the laser-induced variances in the transmission of the thin film. The proposed technique removes the need of fabricating annular pupil filters. (C) 2008 Optical Society of America.