Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences

Autoria(s): Huan Huang(黄欢); Fangyuan Zuo(左方圆); Fengxiao Zhai(翟凤潇); Yang Wang(王阳); Tianshu Lai(赖天树); Yiqun.Wu(吴谊群); and Fuxi Gan(干福熹)
Data(s)

2009
Identificador

http://ir.siom.ac.cn/handle/181231/6724

http://www.irgrid.ac.cn/handle/1471x/11437
Idioma(s)

中文
Fonte

Huan Huang, Fangyuan Zuo, Fengxiao Zhai, Yang Wang, Tianshu Lai, Yiqun.Wu, and Fuxi Gan.Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences.Journal of Appled Physics,2009,106:063501-063505
Palavras-Chave #固体物理学
Tipo

期刊论文
Acesso ao item digital