Trajectory Mapping ("TM''): A New Non-Metric Scaling Technique

Trajectory Mapping "TM'' is a new scaling technique designed to recover the parameterizations, axes, and paths used to traverse a feature space. Unlike Multidimensional Scaling (MDS), there is no assumption that the space is homogenous or metric. Although some metric ordering information is obtained with TM, the main output is the feature parameterizations that partition the given domain of object samples into different categories. Following an introductory example, the technique is further illustrated using first a set of colors and then a collection of textures taken from Brodatz (1966).

Column switching-back flushing technique for the analysis of aromatic compounds in gasoline

A simple method, based on the technique of capillary column switching-back flushing, has been developed for the detailed analysis of aromatic compounds in gasoline. The sample was first separated on a 30-m long OV-2330 polar precolumn and then backflushed onto a nonpolar analytical column. The early eluting components from the precolumn and the components of interest (aromatic compounds plus heavier compounds) eluting from the analytical column are all directed to the same flame ionization detection system through a T piece, which permits the quantitative analysis of aromatic hydrocarbons in gasoline by a normalization method using correcting factors. The switching time window of the method is +/-5 s, resulting in easier operation and higher reliability. The reproducibility of the quantitative analysis was less than or equal to3% RSD for real gasoline samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Redox cycling of Ni-YSZ anode investigated by TPR technique

Effect of redox cycling on a Ni-YSZ anode prepared from 50 wt.% NiO and 50 wt.% YSZ was investigated by using temperature-programmed reduction (TPR), XRD and SEM techniques. XRD results showed that NiO was formed during re-oxidation. Both the XRD and TPR results depicted that the conversion of nickel to NiO depended on the re-oxidation temperature. The oxidation of Ni to NiO occurred quickly in the initial several minutes and then reached a quasi equilibrium. The TPR profiles tracing the redox cycling showed that it brought continuous changes in the NiO micro-structure at 800 degrees C, whereas at 600 degrees C it had only little effects on the reduction of NiO. Re-oxidation resulted in the formation of spongy aggregates of NiO crystallites. Redox cycling at 800 degrees C led to a continuous decrease in the primary crystallite size of NiO and a high dispersion of the Ni particles. A continuous expansion of the slice sample was observed in both of the oxidized and reduced states during the redox cycling at 800 degrees C, whereas this process did not occur during the redox cycling at 600 degrees C. (c) 2005 Elsevier B.V All rights reserved.

Critical incident technique and explicitation interviewing in studies of information behavior

Urquhart, C., Light, A., Thomas, R., Barker, A., Yeoman, A., Cooper, J., Armstrong, C., Fenton, R., Lonsdale, R. & Spink, S. (2003). Critical incident technique and explicitation interviewing in studies of information behavior. Library and Information Science Research, 25(1), 63-88. Sponsorship: JISC (for JUSTEIS element)

Imaging as a technique for assessment and control in the field

C.R. Bull, R. Zwiggelaar and J.V. Stafford, 'Imaging as a technique for assessment and control in the field', Aspects of Applied Biology 43, 197-204 (1995)

Radio tomography: A new experimental technique

Pryse, Sian, 'Radio tomography: A new experimental technique', Surveys in Geophysics (2003) 24 pp.1-38 RAE2008

Constructivist Character of the Technique of Role-Playing Games and its Autonomizing Values in the Glottodidactic Process

To Augustyn Surdyk numerous assumptions of constructivism and constructionism in the educational context seem to correspond with the idea of autonomisation in foreign language didactics. He presents a comparison of selected aspects of the three theories in question on the example of an innovative communicative technique of Role-Playing Games applied in the process of teaching foreign languages at an advanced level. The conventions of the technique with its simplified rules have been borrowed from popular parlour games and adapted by the author to the conditions of language didactics. The elements of play and simulation incorporated in the technique allow it to be rated among techniques of ludic strategy. (from Preface to the book)

Antropologia e psicoterapia

Tese apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Doutor em Ciências Sociais, especialidade em Antropologia

A New Lower Bound Technique for Quantum Circuits without Ancillae

We present a technique to derive depth lower bounds for quantum circuits. The technique is based on the observation that in circuits without ancillae, only a few input states can set all the control qubits of a Toffoli gate to 1. This can be used to selectively remove large Toffoli gates from a quantum circuit while keeping the cumulative error low. We use the technique to give another proof that parity cannot be computed by constant depth quantum circuits without ancillæ.

Development of germanium/silicon integration for near infrared detection

Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera.

Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.

Effect of preantral follicle isolation technique on in-vitro follicular growth, oocyte maturation and embryo development in mice

Background: The use of mechanical and enzymatic techniques to isolate preantral follicles before in-vitro culture has been previously described. The aim of this study was to assess the effect of the isolation procedure of mouse preantral follicles on their subsequent development in vitro. Methods: Follicles were isolated either mechanically or enzymatically and cultured using an individual non-spherical culture system. Follicular development and steroidogenesis, oocyte in-vitro maturation and embryo development were assessed for both groups. Results: After 12 days of culture, follicles isolated mechanically had a higher survival rate but a lower antral-like cavity formation rate than follicles isolated enzymatically. Enzymatic follicle isolation was associated with a higher production of testosterone and estradiol compared with mechanical isolation. A stronger phosphatase alkaline reaction was observed after enzymatic isolation, suggesting that follicles isolated enzymatically had more theca cells than those isolated mechanically. However, both isolation techniques resulted in similar oocyte maturation and embryo development rates. Conclusions: Enzymatic follicular isolation did not affect theca cell development. Follicular steroidogenesis was enhanced after enzymatic isolation but the developmental capacity of oocytes was comparable to that obtained after mechanical isolation.