Temperature- and salinity-dependent development of a Nordic strain of Ichthyophthirius multifiliis from rainbow trout

During the twentieth century evidence was presented which suggested the presence of various strains and races of the parasite Ichthyophthirius multifiliis Fouquet. However, ecological profiles of various parasite isolates from different climatic zones are sparse. Such stringent characterizations of parasite development at defined abiotic conditions could provide valuable criteria for the different races: profile comparison from various localities is one way to differentiate these strains. Baseline investigations were therefore performed on the associations between abiotic factors (temperature/salinity) and the development of theronts in tomocysts of I. multifiliis isolated from rainbow trout in a Danish trout farm. It was shown that tomocyst formation and theront development took place between 5 and 30degreesC. Development rates and sizes of theronts were clearly affected by temperature: theronts escaped tomocysts already after 16-27 h at 25degreesC and 30degreesC, whereas this process took 8-9 days at 5degreesC. Likewise, theront size decreased steadily from a maximum of 57.4 x 28.6 mum at 5degreesC to 28.6 x 20.0 mum at 30degreesC. This size variation was only partly associated with the number of theronts that appeared at different temperatures. The lowest number of theronts escaping from one tomocyst was indeed found at 5-7degreesC (mean 329-413). At 11.6, 17.0 and 21degreesC. the highest number of theronts appeared (mean 546-642). However, at 25 and 30degreesC, the number decreased (458 and 424, respectively). Additional studies on the salinity dependent development of the parasite (at 11.6degreesC) showed that salinities above 5 p.p.t. totally inhibited development. Even at 5 p.p.t. the developmental time significantly increased and the number of theronts produced from one tomocyst decreased.

The effect of food concentration on the life history of three types of Brachionus calyciflorus females

The effect of food concentration on the life history of three types of Brachionus calciflorus females (amictic, unfertilized mictic and fertilized mictic female) was studied with replicated individual cultures at 25 degrees and at four food concentrations (1.5, 3.0, 6.0 and 9.0 x 10(6) cells mL(-1)) of Scenedesmus obliquus. There were highly significant effects of both food concentration and female type, independently and in interaction on the duration of juvenile period of the rotifer, but neither a;ere the effects on the duration of post-reproductive period and mean life-span. The duration of juvenile period of unfertilized mictic female at the food concentration of 9.0 x 10(6) cells mL(-1) was the longest among all the food concentration-female type combinations. Both food concentration and female type influenced significantly the duration of reproductive period and the number of eggs produced by each type of female per life cycle, respectively. There was, however, no significant interaction between food level and female type. Among the three types of females, the number of eggs produced by an unfertilized mictic female was the largest. and that of a fertilized mictic female was the smallest.

Construction and analysis of a high-CO2-requiring mutant of the cyanobacterium Anabaena sp strain PCC7120

A mutant of Anabaena sp. strain PCC7120 requiring high CO2 was generated using Tn5 mutagenesis. This is the first data for a filamentous cyanobacterium. The mutant was capable of growing at 5% CO2, but incapable of growing at air levels of CO2. Southern hybridization analysis indicated that the Anabaena genome was inserted by the transposon at one site. The apparent photosynthetic affinity of the mutant to external dissolved inorganic carbon (DIC) was about 300 times lower that of the wild type (WT), and the medium alkalization rate as well as the carboxysomal carbonic anhydrase activity of the mutant was also lower than those of the WT. When the mutant was transferred from the culture medium bubbled with 5% CO2 to higher DIC (8.4% CO2) or 1% CO2, it showed similar responses to the WT. However, aberrant carboxysomes were found in the mutant cells through ultrastructural analysis, indicating it was most probably the wrong organization of the carboxysomes that eventually led to the inefficient operation of carboxysomal carbonic anhydrase and the subsequent defectiveness of the mutant in utilizing DIC.

An inducible CO2 concentrating mechanism in cyanobacterium Anabaena sp strain PCC7120

In order to define its characteristics of the photosynthetic utilization of CO2 and HCO3- when the ambient inorganic carbon changed, HCG (High-CO2-Growing Cells) of cyanobacterium Anabaena sp. strain PCC7120 were prepared. The growth rate of HCG was higher than that of LCG (low-CO2-growing cells, i.e. air-growing cells). When the HCG cells were transferred from 5% CO2 to air levels of CO2 , a series of changes took place: its carbonic anhydrase activity as well as its photosynthetic affinity to the external inorganic carbon significantly increased; the number of the carboxysomes, which is one of the most important components of CCM in cyanobacteria also increased. These facts indicated that the CCM activity of Anabaena PCC 7120 was induced. When the pH in the medium increased from 6 to 9, the photosynthetic affinity to external inorganic carbon of both HCG and LCG declined, while the apparent photosynthetic affinity to external CO2 increased. In the light of these findings, this inducible CCM in cyanobacteria provided a good model for the study of the photosynthetic Ci utilization in the phototrophic microoganisms.

Growth of Chlorella vulgaris in cultures with low concentration dimethoate as source of phosphorus

The growth response of Chlorella vulgaris to low concentration of dimethoate, an organophosphorus pesticide, was studied. Results show that cell density, protein content, chlorophyll pigment and alkaline phosphatase activity were all increased, which indicates that low concentration dimethoate can accelerate growth of Chlorella vulgaris. (C) 1997 Elsevier Science Ltd.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (Si(0.76)Geo(0.24)) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k center dot p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of GaN-based laser performance.

Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

The influence of Schottky contact metals on the strain of AlGaN barrier layers

Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared. Using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared Schottky contacts, the polarization charge densities of the AlGaN barrier layer for the Schottky contacts were analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the polarization charge density of the AlGaN barrier layer for the Ir Schottky contact on strained Al0.25Ga0.75N/GaN heterostructures is different from that of the Ni Schottky contact, and the polarization charge densities of the AlGaN barrier layer for Ni Schottky contacts with different areas on strained Al0.3Ga0.7N/GaN heterostructures are different corresponding to different Ni Schottky contact areas. As a result, the conclusion can be made that Schottky contact metals on strained AlGaN/GaN heterostructures have an influence on the strain of the AlGaN barrier layer. (C) 2008 American Institute of Physics.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.