Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped GaAs/AlAs superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. As the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. These results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04443-5].

Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

The current-voltage (I-V) characteristics of a doped weakly coupled GaAs/AlAs superlattice (SL) with narrow barriers are measured under hydrostatic pressure from 1 bar to 13.5 kbar at both 77 and 300 K. The experimental results show that, contrary to the results in SL with wide barriers, the plateau in the I-V curve at 77 K does not shrink with increasing pressure, and becomes wider after 10.5 kbar. It is explained by the fact that the E-Gamma 1-E-Gamma 1 resonance peak is higher than the E-Gamma 1-E-X1 resonance peak. At 300 K, however, because of the more important contribution of the nonresonant component to the current, the plateau shrinks with increasing pressure. (C) 1999 American Institute of Physics. [S0021-8979(99)02008-3].

Room-temperature microwave oscillation in AlAs/GaAs superlattices

Room-temperature microwave (MW) oscillations are observed in GaAs/AlAs (10 nm/2 nm) doped weakly coupled superlattices (SLs) in the first plateau of the I-V curve. Oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 K by applying DC bias on the Si, diodes. The temperature dependence of current at small fixed bias voltage is also measured. Through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 K. The low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the X valley of AlAs barriers in the room-temperature transport. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature

The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the I-V curve. The plateau disappears when the pressure is close to 13.5 kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Gamma point valley, the disappearance of oscillation and the plateau shrinkage before Gamma - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Gamma - X barrier height in GaAs/AlAs SL structure.

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.

Experiment on Qinghai-Tibet railroad subgrade temperature monitoring based on FBG sensors

Qinghai-Tibet Railway is the longest and highest plateau railway in the world. A long term monitoring system of the stability of the subgrade in the permafrost regions should be put forward immediately to prevent damage to the railway. As it's very difficult to set up the long-distance automatic monitoring system which contains a lot of measure points along the 550 kilometers railway in the permafrost area, we present a subgrade temperature monitor system based on fiber Bragg grating (FBG). In this paper the principles of the FBG was presented, and the feasibility of the FBG sensors in the permafrost area of Qinghai-Tibet plateau was analysized. We embedded fifteen FBG temperature sensors and thermal resistance temperature sensors. A contrast experiment is made while the two kinds of sensors are arranged in the same position. The result of the experiment shows that the accuracy of the FBG temperature sensors is less than 0.1 degrees C. and the FBG sensors can do well in the measurement of pattern which the temperature varies with the depth of the permafrost soil. The result also shows the stability of the FBG sensors in the bad environmental condition of Qinghai-Tibet plateau, which proves the feasibility of the application of FBG sensors and our monitoring system on the Qinghai-Tibet railway.

施肥对黄土旱塬区黑垆土土壤肥力及硝态氮累积的影响

本文以长期定位试验为依托,研究了黄土高原旱塬区黑垆土大田对比试验和长期定位施肥对土壤肥力及硝态氮累积和淋溶的影响。结果表明:长期施用有机肥能够明显增加土壤养分,氮磷和有机肥配施效果显著;和1984年土壤养分状况相比,大田对比试验土壤有机质增加了27.1%,全氮和全磷提高了84.2%和34.8%,有效氮、有效磷和速效钾增加了46.9%、540.0%和10.2%,养分水平与长期定位试验中氮磷配施相近。长期定位试验中氮磷配施或与有机肥配施能够有效地减少土壤剖面中硝酸盐的累积和淋溶,氮肥单施硝态氮累积量最大,为1006.4kg/hm2,大田对比试验土壤硝态氮总累积量较长期定位试验中施用氮肥处理的总累积量少。

PAA对不同土壤保水和蒸发性能的影响

采用土柱法研究了不同PAA施入量对3种黄土高原主要土壤类型(黄绵土、黑垆土和塿土)的持水性能、土壤饱和导水率和土壤蒸发量的影响,以进一步阐明PAA的保水和蒸发作用。结果表明,施入PAA提高了土壤的持水性能。在未加入PAA之前黑垆土的持水性能最低,塿土的最高,黄绵土的次之;加入PAA后,黑垆土的持水能力显著增加,几乎为对照的2倍,塿土和黄绵土也都比对照高。土壤的供水能力随PAA用量的增加而增强,不同土壤类型之间表现为:塿土>黑垆土>黄绵土。未加入PAA时,3种土壤饱和导水率大小为:塿土>黑垆土>黄绵土;加入PAA后,3种土壤的饱和导水率都降低,且基本随PAA用量的增加而降低。在一定水分条件下,PAA的施入提高了土壤的抗蒸发性能,随PAA用量的增加,塿土和黑垆土的土壤蒸发量增加,但都低于对照,而黄绵土的土壤蒸发量随PAA用量的增加而降低。其中施PAA54.5 mg/kg的塿土、黑垆土和施PAA225.8 mg/kg的黄绵土与对照相比,土壤蒸发量分别减少了44.0%,44.6%和30.6%。

黄土高原水土流失治理进展及其对策

黄土高原地区水土流失类型复杂,既有自然因素和人为因素,也有水力、风力、重力产生的变化。同时气候干旱、水资源缺乏成为植物生长和生态环境改善的最大障碍。在国家实施西部大开发的进程中,良好的生态环境成为生存与发展和建设小康社会的标志。无论从西部大开发的战略角度考虑,还是从退耕还林(草)政策实施8年以后,如何解决黄土高原地区人民群众衣食住行、经济发展问题及黄河减沙的角度来看,采取有效措施,加快该区的生态建设已势在必行。根据第十一个五年规划的建议,以生态恢复学和土壤侵蚀学的基本原理为指导,分析了黄土高原地区的重要性,探讨了黄土高原生态建设与经济发展的基本现状,因地制宜地提出了发展对策。

半干旱区人工林地土壤入渗过程分析

森林是陆地生态系统最高大的植物群落,是维护陆地生态系统平衡的主要力量。穿过林冠到达地表面的雨水,要么通过空隙进入土壤形成土壤水,要么沿坡面流失形成地表径流。进入土壤的水分,或存储在土体内供植物吸收和利用,或在垂直入渗过程中改变方向形成壤中流,或穿过土层形成深层渗漏补给地下水。近年来,黄土高原大部分地区人工林地林水关系失调,在多年生人工林草地出现了以土壤旱化为主要特征的土壤退化现象。由于黄土高原大部分人工林地的地下水埋藏较深,水资源缺乏,无灌溉条件,因此林地土壤水分主要依靠天然降雨补给,林水关系调控只能依据土壤水分补给和存储情况决定。目前,根系利用土层土壤水分与植物生长的动态关系又成为生态需水研究的一个核心问题[1]。因此研究半干旱地区人工林地土壤入渗过程,确定土壤水分入渗深度和入渗量,对于可持续利用土壤水资源,防治土壤旱化,改善土壤水分与植被生长关系均具重要意义。测定土壤入渗的方法有直接测法和间接测定法。刘向东等采用流水型下渗仪,测定了宁夏南部的六盘山区主要森林植被类型原状土入渗速率[2]。双环入渗仪[3]是国内外常用的一种测定入渗的方法。但是这种方法不能用于山坡地。在双环入土时,对土壤,特别是表层土壤产生破...

黄土区人工与天然植被对凋落物量和土壤有机碳变化的影响

在黄土丘陵区选择从耕地、草地、灌木林到乔木林样地,不同样地内设立1m×1m(乔木10m×10m)的样方,分析样方内凋落物积累量、碳氮含量、土壤有机碳(SOC)和可溶性碳(DOC)含量变化。结果表明:天然草地、灌木林、乔木林凋落物积累量依次为5.3,12.1和32.4t.hm-2;但人工灌木林和乔木林的凋落物积累量分别为6.7和11.4t.hm-2,分别是天然灌木林和乔木林的1/2和1/3。随着植被的恢复,天然植被凋落物的C/N高于人工植被(刺槐林除外)。与耕地SOC(4.67g·kg-1)相比,天然灌木林地SOC提高5.9倍,人工灌木林地提高1.8倍;天然乔木林地提高8.0倍,而人工乔木林地仅提高4.0倍。凋落物积累量与0～20cm土层土壤有机碳存在显著线性相关关系(R2>0.83),但20cm以下线性相关关系不显著。凋落物积累量与0～10cm土壤可溶性碳含量存在显著线性相关关系(R2>0.893),与10～60cm土层线性相关关系不显著,与80～100cm土壤可溶性碳存在显著线性负相关关系。

高产抗旱优质谷子新品种辐谷7号的选育与推广利

利用400Gy 60Co γ射线处理87070谷子品系干种子,选育出辐谷7号新品种。该品种具有株型紧凑、茎秆矮、高产抗旱优质并且适应种植地区广等特点。2002年2月通过陕西省农作物品种审定委员会审定,截止2008年在黄土高原地区累计推广10.8万hm2。