Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film

Negative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film. (c) 2006 Elsevier B.V. All rights reserved.

Far-field intensity distribution and M-2 factor of hollow Gaussian beams

The far-field intensity distribution of hollow Gaussian beams was investigated based on scalar diffraction theory. An analytical expression of the M-2 factor of the beams was derived on the basis of the second-order moments. Moreover, numerical examples to illustrate our analytical results are given. (c) 2005 Optical Society of America.

Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS). When the incident light entered with 45 degrees, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.

High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation

HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.

反射式相位延迟器的性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。通过优化设计，入射角为45°，在1285～1345nm之间p，s波获得了270°±0．15°的相移和99．5％以上的反射率。对使用的膜系进行了每层光学厚度的误差分析。用离子柬溅射技术制备相位延迟膜，在大气中对样品进行不同温度的退火，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性。结果表明，未退火的样品在相应波段获得了267．5°±0．5°的相移和99．6％以上的反射率；根据拟合分析，最外层的误差和折射率与设计值的偏差是发生相移偏小的

Preparation of high laser induced damage threshold antireflection film using interrupted ion assisted deposition

Single layers and antireflection films were deposited by electron beam evaporation, ion assisted deposition and interrupted ion assisted deposition, respectively. Antireflection film of quite high laser damage threshold (18J/cm(2)) deposited by interrupted ion assisted deposition were got. The electric field distribution, weak absorption, and residual stress of films and their relations to damage threshold were investigated. It was shown that the laser induced damage threshold of film was the result of competition of disadvantages and advantages, and interrupted ion assisted deposition was one of the valuable methods for preparing high laser induced damage threshold films. (c) 2007 Optical Society of America

Far-field intensity distribution, M-2 factor of beams generated by Gaussian mirror resonator

We investigated M-2 factor and far-field distribution of beams generated by Gaussian mirror resonator. And we found usable analytical expressions of the M2 factor and the far-field distribution intensity with respect to variation of diffraction parameters. Particular attention was paid to the parameters such as mirror spot size and reflectance of the Gaussian mirror. (c) 2006 Elsevier GrnbH. All rights reserved.

Propagation properties of beams generated by Gaussian mirror resonator in uniaxial crystals

Based on the paraxial vectorial theory of beams propagating in uniaxially anisotropic media, we have derived the analytical propagation equations of beams generated by Gaussian mirror resonator (GMR) in uniaxial crystals, and given the typical numerical example to illustrate our analytical results. Due to the anisotropy crystals, the ordinary and extraordinary beams originated by incident beams generated by GMR propagate with different diffraction lengths, thus the linear polarization state and axial symmetry of the incident beams generated by GMR do not remain during propagating in crystals. (c) 2006 Elsevier GmbH. All rights reserved.

Nonparaxial propagation of vectorial hollow Gaussian beams

Based on the vectorial Raleigh-Sommerfeld diffraction integral, the nonparaxial. propagation of vectorial hollow Gaussian beams (HGBs) in free space is studied. The far-field and paraxial cases can be treated as special cases of our general results. The typical numerical examples are given to illustrate our analytical results and comparisons between the different approximations present that the f parameter still plays an important role in determining the nonparaxiality of vectorial diffracted HGBs. (c) 2007 Optical Society of America.

Propagation and polarization properties of hollow Gaussian beams in uniaxial crystals

Based on the paraxial vectorial theory of beams propagating in uniaxially anisotropic media, we have derived the analytical propagation equations of hollow Gaussian beams (HGBs) in uniaxial crystals, and given the typical numerical example to illustrate our analytical results. Due to the anisotropy crystals, the ordinary and extraordinary beams originated by incident HGBs propagate with different diffraction lengths, thus the linear polarization state and axial symmetry of incident HGBs do not remain during propagating in crystals. (c) 2007 Published by Elsevier B.V.