992 resultados para Fat deposition


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Beta-phase W, selectively grown at 440C had resistivity 20 micro-ohm cm and maximum layer thickness 100nm. Hydrogen passivation proved essential in this process. Higher deposition temperatures resulted in increased layer thickness but incorporated WSi2 and alpha- phase W. Self limiting W grown on polycrystalline and heavily doped silicon yielded reduced thickness. Boron is involved in the WF6 reduction reaction but phosphorus is not and becomes incorporated in the W layer. The paper establishes an optimised and novel CVD process suited to IC contact technology. A funded technology transfer contract with National Semiconductor Greenock (M Fallon) resulted from this work.

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Future read heads in hard disc storage require high conformal coatings of metal magnetic layers over high aspect ratio profiles. This paper describes pioneering work on the use of MOCVD for the deposition of cobalt layers. While pure cobalt layers could be deposited at 400C their magnetic properties are poor. It was found that the magnetic properties of the layers could be significantly enhanced with an optimised rapid thermal anneal. This work was sponsored by Seagate Technology and led to a follow up PhD studentship on the co-deposition of cobalt and iron by MOCVD.

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We present first-principles calculations for a number of metals adsorbed on several different metallic substrates. Some of these systems are very relevant in electrochemistry, especially in the field of underpotential deposition phenomena. The present studies reveal the existence of a relationship between the excess binding energy and the surface energy difference between substrate and adsorbate. Comparisons with experimental underpotential shifts show that excess binding energies are systematically underestimated. By analyzing experimental information on different systems, we conclude that this discrepancy between our vacuum calculations and experiments carried out in an electrolytic solution is likely to be due to anion adsorption and/or solvent effects.