Intense infrared luminescence in transparent glass-ceramics containing beta-Ga2O3 : Ni2+ nanocrystals

Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.

单束飞秒激光在氧化铝晶体中诱导自组装微米点阵

报道了单束飞秒激光在氧化铝晶体中诱导自组装微米点阵的有关研究进展。当单束飞秒激光被透镜聚焦到氧化铝晶体的内部某固定点， 微米点阵就在聚焦点的下方自动生成。我们发现能否产生自组装点阵和光束的聚焦点距离样品表面的深度有关。通过比较在氧化铝晶体和氟化钙晶体中能够产生点阵的深度，我们发现在氧化铝中较浅的位置即能诱导出点阵，而在氟化钙中则要求深度较深。具体的机理在文中进行了讨论。

Growth of beta barium borate (beta-BaB2O4) thin films on alpha barium borate (alpha-BaB2O4) substrates

Crystalline beta-BBO thin films have been successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates using liquid phase epitaxy and pulsed laser deposition techniques. The films were characterized by X-ray diffraction and X-ray rocking curve (XRC). The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f-value and smaller XRC FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the same UV cutoff and the similar structure to beta-BBO. These results reveal that alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films. (c) 2005 Elsevier B.V. All rights reserved.

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Cr^3＋：Al2O3透明多晶陶瓷光谱特性分析

对透光性良好的Cr^3＋：Al2O3透明多晶陶瓷的光谱性能进行了研究，其吸收光谱中吸收峰与单晶红宝石相一致，按吸收光谱和Tanabe-Sugano能级图，算出其晶场强度参数Dq及Racah参数B分别为1792cm^-1，689cm^-1，Dq／B=2．6，陶瓷中Cr^3＋离子所处格位的晶体场强比单晶弱一些，但Cr^3＋：Al2O3透明陶瓷仍属于强场晶体材料；当Cr^3＋掺杂浓度到达0．8wt％时，陶瓷的发射谱仍保持较好的R线发射；随Cr^3＋掺杂浓度的增大，激发峰位发生“红移”．在Cr^3＋：Al2O3透

Luminescence studies of Ce : YAG using vacuum ultraviolet synchrotron radiation

Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

V^3＋：YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V：YAG晶体，晶体的不同部位呈现两种不同的颜色：浅绿色和黄褐色．通过对比分析不同颜色V：YAG晶体的室温吸收光谱，推断出石墨发热体高温下扩散出来的C可以起到还原作用，提高晶体中V^3＋tetra离子的浓度，同时诱导了F心的形成．在1300℃下，对不同颜色的V：YAG晶体进行真空退火处理，发现处于八面体格位中的V^3＋离子在热激发作用下与近邻的四面体格位Al^3＋离子存在置换反应，由此产生一定浓度的四面体格位V^3＋离子．同时，F心在退火过程中被完全消除，释放出来的自由电子被

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

提拉法生长镓酸锂晶体及缺陷研究

研究了提拉法生长的镓酸锂单晶的生长习性和结晶质量。晶体表面呈乳白色且表面粗糙。通过光学显微镜、四晶X射线衍射、透射光谱和电感耦合等离子体发射光谱对样品进行了表征，结果表明，在（001）面的抛光样品上存在三种缺陷：[110]和[-110]方向的十字线、[010]方向排列的气泡包裹物以及平行于（010）面的界面，界面的产生起因于（010）晶面的滑移；晶体的结晶质量从顶部到底部逐渐下降，这是由于在生长过程中氧化锂的挥发导致熔体成分偏离化学计量比造成的。

在Sr～2+α_BBO单晶衬底上生长β_BBO薄膜的研究

Crystalline beta-BBO thin films were successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates by using liquid phase epitaxy, pulsed laser deposition and vapor transport equilibration techniques. The films were characterized by X-ray diffraction and X-ray rocking curve. The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f value and smaller X-ray rocking curve FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the similar structure, the same UV cutoff and the same chemical properties to beta-BBO. These results reveal that Sr2+-doped alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films.

Study on growth and properties of novel gamma-LiAlO2 substrate

Transparent gamma-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O-2-atmosphere at 1100 degrees C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O-2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

Transparent polycrystalline MgO and TiO2 codoped Al2O3 ceramics were fabricated by conventional solid-state pressureless processing. The absorption, emission and excitation spectra of ( Mg, Ti : Al2O3 ceramics were measured. Owing to charge compensation of Mg2+, only UV absorption around 250nm was observed due to O2- -> Ti4+ charge transfer transitions (CT) when Ti content was low. As a result, the emission peaks of isolated Ti4+ ion located at 280-290nm and 410-420nm were observed. Besides absorption peak of V, ion, the characteristic absorption peak of V, ion centered at 490nm was observed in Mg, Ti) : Al2O3 ceramics when Ti content was high. The emission spectra of Ti3+, ion in polycrystalline Al2O3 ceramics coincide with that of Ti: Al2O3 single crystal.

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

显微成像荧光屏用无机闪烁单晶薄膜的研究进展

随着第三代同步辐射源的出现，由荧光屏和CCD耦合组成的、具有亚微米级空间分辨率、快速在线成像功能的探测器在医疗、安检、工业、科研等领域将会得到广泛应用．本文主要综述了成像荧光屏用材料的概况和发展趋势，重点阐述了闪烁单晶薄膜的研究及发展情况．

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10