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Recent studies show that carbon nanotubes (CNTs) can be used as temperature sensors, and offer great opportunities towards extreme miniaturization, high sensitivity, low power consumption, and rapid response. Previous CNT based temperature sensors are fabricated by either dielectrophoresis or piece-wise alignment of read-out electronics around randomly dispersed CNTs. We introduce a new deterministic and parallel microsensor fabrication method based on the self-assembly of CNTs into three-dimensional microbridges. We fabricated prototype microbridge sensors on patterned electrodes, and found their sensitivity to be better than -0.1 %/K at temperatures between 300K and 420K. This performance is comparable to previously published CNT based temperature sensors. Importantly, however, our research shows how unique sensor architectures can be made by self-assembly, which can be achieved using batch processing rather than piecewise assembly. ©2010 IEEE.

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To explore the relational challenges for general practitioner (GP) leaders setting up new network-centric commissioning organisations in the recent health policy reform in England, we use innovation network theory to identify key network leadership practices that facilitate healthcare innovation.

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Natural odors are usually mixtures; yet, humans and animals can experience them as unitary percepts. Olfaction also enables stimulus categorization and generalization. We studied how these computations are performed with the responses of 168 locust antennal lobe projection neurons (PNs) to varying mixtures of two monomolecular odors, and of 174 PNs and 209 mushroom body Kenyon cells (KCs) to mixtures of up to eight monomolecular odors. Single-PN responses showed strong hypoadditivity and population trajectories clustered by odor concentration and mixture similarity. KC responses were much sparser on average than those of PNs and often signaled the presence of single components in mixtures. Linear classifiers could read out the responses of both populations in single time bins to perform odor identification, categorization, and generalization. Our results suggest that odor representations in the mushroom body may result from competing optimization constraints to facilitate memorization (sparseness) while enabling identification, classification, and generalization.

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Natural odors are usually mixtures; yet, humans and animals can experience them as unitary percepts. Olfaction also enables stimulus categorization and generalization. We studied how these computations are performed with the responses of 168 locust antennal lobe projection neurons (PNs) to varying mixtures of two monomolecular odors, and of 174 PNs and 209 mushroom body Kenyon cells (KCs) to mixtures of up to eight monomolecular odors. Single-PN responses showed strong hypoadditivity and population trajectories clustered by odor concentration and mixture similarity. KC responses were much sparser on average than those of PNs and often signaled the presence of single components in mixtures. Linear classifiers could read out the responses of both populations in single time bins to perform odor identification, categorization, and generalization. Our results suggest that odor representations in the mushroom body may result from competing optimization constraints to facilitate memorization (sparseness) while enabling identification, classification, and generalization

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We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

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The discusser read with interest the paper by Diakoumi & Powrie (2013) proposing an interesting method for the analysis of propped flexible retaining walls based on the mobilisation of active and passive pressures on the wall due to movement of wall segments. An assumed deformation mechanism within the soil is used to estimate the strain associated with rotation of a particular wall segment. This mechanism is then superposed for each wall segment, the resulting earth pressures are calculated; the equality between the wall bending moments implied by equilibrium and those required to achieve the appropriate bending of the wall is used to calculate the rotation of each segment. Although the method of analysis provides insight into the conservatism of conventional design calculations for different wall flexibilities, there are two aspects of the paper which provoke further discussion.

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A venerable history of classical work on autoassociative memory has significantly shaped our understanding of several features of the hippocampus, and most prominently of its CA3 area, in relation to memory storage and retrieval. However, existing theories of hippocampal memory processing ignore a key biological constraint affecting memory storage in neural circuits: the bounded dynamical range of synapses. Recent treatments based on the notion of metaplasticity provide a powerful model for individual bounded synapses; however, their implications for the ability of the hippocampus to retrieve memories well and the dynamics of neurons associated with that retrieval are both unknown. Here, we develop a theoretical framework for memory storage and recall with bounded synapses. We formulate the recall of a previously stored pattern from a noisy recall cue and limited-capacity (and therefore lossy) synapses as a probabilistic inference problem, and derive neural dynamics that implement approximate inference algorithms to solve this problem efficiently. In particular, for binary synapses with metaplastic states, we demonstrate for the first time that memories can be efficiently read out with biologically plausible network dynamics that are completely constrained by the synaptic plasticity rule, and the statistics of the stored patterns and of the recall cue. Our theory organises into a coherent framework a wide range of existing data about the regulation of excitability, feedback inhibition, and network oscillations in area CA3, and makes novel and directly testable predictions that can guide future experiments.

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Bacillus anthracis can be identified by detecting virulence factor genes located on two plasmids, pXO1 and pXO2. Combining multiplex PCR with arrayed anchored primer PCR and biotin-avidin alkaline phosphatase indicator system, we developed a qualitative DNA chip method for characterization of B. anthracis, and simultaneous confirmation of the species identity independent of plasmid contents. The assay amplifies pag gene (in pXO1), cap gene (in pXO2) and Ba813 gene (a B. anthracis specific chromosomal marker), and the results were indicated by an easy-to-read profile based on the color reaction of alkaline phosphatase. About 1 pg of specific DNA fragments on the chip wells could be detected after PCR. With the proposed method, the avirulent (pXO1(+)/2(-), pXO1(-)/2(+) and pXO1(-)/2(-)) strains of B. anthracis and distinguished 'anthrax-like' strains from other B. cereus group bacteria were unambiguously identified, while the genera other than Bacillus gave no positive signal. (C) 2004 Elsevier B.V. All rights reserved.

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A compact direct digital frequency synthesizer (DDFS) for system-on-chip (SoC) is developed in this paper. For smaller chip size and lower power consumption, the phase to sine mapping data is compressed by using sine symmetry technique, sine-phase difference technique, quad line approximation (QLA) technique and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98 % using the techniques mentioned above. A compact DDFS chip with 32-bit phase storage depth and a 10-bit on-chip digital to analog converter(DAC) has been successfully implemented using standard 0.35um CMOS process. The core area of the DDFS is 1.6mm(2). It consumes 167 mW at 3.3V, and its spurious free dynamic range (SFDR) is 61dB.

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This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

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An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).

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Two photochromic fulgides, 2-{2-[4-(N,N-dimethylnilino)-5-methyl-4-oxazoly]}ethylidene-4-(1-methylethylidene) tetrahydrofuran-2,5-dione (A) and 3-(1,2-dimethyl-5-phenyl-3-pyrolloethylidene)-4-(1-methylethylidene)tetrahydrofuran-2,5-dione (B), doped in PMMA as candidates of dual-wavelength optical memory for parallel recording has been investigated. With 488 nm-laser and 650 nm-laser, both "cross" and "star" images are recorded on the fulgides-PMMA film and read out clearly, respectively. Crosstalk between two fulgides in PMMA matrix and nondestructive readout has also been explored. The results show that no significant cross-talk is detected between them, and nondestructive readout is up to 201 times. (C) 2005 Elsevier B.V. All rights reserved.

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Photoinduced anisotropy in bacteriorhodopsin (BR) film is based on photoanisotropic selective bleaching of BR molecules under linearly polarized excitation light. It is modulated by the polarization orientation of the linearly polarized light. The anisotropic information recorded in the BR film is read by a circularly polarized light, which is in turn converted into an elliptical polarized light by the BR film. The rotation angle and the ellipticity of the elliptical polarized light are dependent on the polarization orientation of the linearly polarized excitation light. A phase-shifting interferometer based on the photoinduced anisotropy of BR film is presented theoretically and experimentally. Phase shift is controlled by the polarization orientation of the external excitation light, thus, the phase shift can be controlled without moving parts inside the interferometer, which contributes to the mechanical stability of the system.

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This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator (SO1) technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic "1" while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable "read" operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin (SNM) of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.