On-chip tunable micro-ring resonator based on digital microfluidics platform

We demonstrate the tunability of a silicon nitride micro-resonator using the concept of Digital Microfluidics. Our system allows driving micro-droplets on-chip, enabling the control of the effective refractive index at the vicinity of the resonator. © 2010 OSA/FiO/LS 2010.

Evaluation of soot particles of biomass fuels with endocrine-modulating activity in yeast-based bioassay

Exposure to indoor air pollution (IAP) from the combustion of biomass fuels is an important cause of morbidity and mortality in developing countries. In the work discussed in this paper we evaluated the endocrine activity of soot particles from biomass fuels by using yeast bioassay. These pollutants could have beta-galactosidase activity with a relative potency (RP) about 10(-7)-10(-9) that of estradiol. Soot particles from wood and straw combustion only partially induced beta-galactosidase activity whereas others produced fully inductive activity in the yeast assay system. These pollutants did not have estrogen antagonist and progesterone agonist activity within the defined concentration range. However, these pollutants require 2-4 orders of magnitude higher IC50 to inhibit the activity of progesterone in a similar dose-response manner to mifepristone. We therefore propose that the endocrine activity of some environmental pollutants may be because of inhibition of the progesterone receptor (hPR). GC-MS results showed that substituted polycyclic aromatic hydrocarbon (PAH) compounds, substituted phenolic compounds and derivatives, aromatic carbonyl compounds, and phytosteroids in these soot particles may be mimicking endogenous hormones.

Cementing mechanism of algal crusts from desert area

34-, 17-, 4-, 1.5-year old natural algal crusts were collected from Shapotou Scientific Station of the Chinese Academy of Sciences, 40-day old field and greenhouse artificial algal crusts were in situ developed in the same sandy soil and the same place (37degrees27'N, 104degrees57'E). Their different cohesions both against wind force and pressure were measured respectively by a sandy wind-tunnel experiment and a penetrometer. On the basis of these algal crusts, the cementing mechanism was revealed from many subjects and different levels. The results showed that in the indoor artificial crusts with the weakest cohesion bunchy algal filaments were distributed in the surface of the crusts, produced few extracellular polymers (EPS), the binding capacity of the crusts just accomplished by mechanical bundle of algal filaments. For field crusts, most filaments grew toward the deeper layers of algal crusts, secreted much more EPS, and when organic matter content was more than 2.4 times of chlorophyll a, overmuch organic matter (primarily is EPS) began to gather onto the surface of the crusts and formed an organic layer in the relatively lower micro-area, and this made the crust cohesion increase 2.5 times. When the organic layer adsorbed and intercepted amounts of dusts, soil particles and sand grains scattered down from wind, it changed gradually into an inorganic layer in which inorganic matter dominated, and this made the crusts cohesion further enhanced 2-6 times. For crust-building species Microcoleus vaginatus, 88.5% of EPS were the acidic components, 78% were the acidic proteglycan of 380 kD. The uronic acid content accounted for 8% of proteglycan, and their free carboxyls were important sites of binding with metal cations from surrounding matrix.

A new enzyme immunoassay for PCDD/F TEQ screening in environmental samples: Comparison to micro-EROD assay and to chemical analysis

A new Enzyme ImmunoAssay (EIA) for PCDD/F TEQ measurement in extracts of environmental samples was described. The bioassay TEQ which derived from EIA and EROD were compared with each other and with results from chemical analysis. For all environmental samples, the EROD-TEQ is higher than the value from chemical analysis. However, the EIA-TEQ is much more identical with the value from chemical analysis. Our results indicate that the EIA assay is a complementary method to the EROD assay and should be useful as a rapid and sensitive screening tool for environmental samples in many situations. (C) 1999 Elsevier Science Ltd. All rights reserved

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Transparent and Light-Emitting Epoxy Super-Nanocomposites Containing ZnO-QDs/SiO2 Nanocomposite Particles as Encapsulating Materials for Solid-State Lighting

In this article, the ZnO quantum dots-SiO2 (Z-S) nanocomposite particles were first synthesized. Transparent Z-S/epoxy super-nanocomposites were then prepared by introducing calcined Z-S nanocomposite particles with a proper ratio of ZnO to SiO2 into a transparent epoxy matrix in terms of the filler-matrix refractive index matching principle. It was shown that the epoxy super-nanocomposites displayed intense luminescence with broad emission spectra. Moreover, the epoxy super-nanocomposites showed the interesting afterglow phenomenon with a long phosphorescence lifetime that was not observed for ZnO-QDs/epoxy nanocomposites. Finally, the transparent and light-emitting Z-S/epoxy super-nanocomposites were successfully employed as encapsulating materials for synthesis of highly bright LED lamps.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

Design and fabrication of polarization-independent micro-ring resonators

Origin of polarization sensitivity of photonic wire waveguides (PWWs) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25 nm and 1558.90 nm, and the quasi-TM mode is resonant at 1542.12 nm and 1558.94 nm. The corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. Thus the fabricated device is polarization independent. The extinction ratio is larger than 10 dB. The 3 dB bandwidth is about 2.5 nm and the Qvalue is about 620 at 1558.90 nm.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure

We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

Fabrication of low-cost and high-reflectivity bottom mirrors for Si-based micro-cavity devices

A novel and simple way to prepare high-reflectivity bottom mirrors for Si-based micro-cavity devices is reported. The bottom mirror was deposited in the hole, which was etched from the backside of the sample by ethylenediamine-pyrocatechol-water solution with the buried Sio, layer in the silicon-on-insulator substrate as the etching-stop layer. The high-reflectivity of the bottom mirror deposited in the hole and the narrow hill width at half maximum of the cavity formed by this method both indicate the successful preparation of the bottom mirror for Si-based micro-cavity devices.

Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique

Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV above the bandgap of GaAs (E-0). By analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the E-0 + Delta(0) bandgap in semi-insulated GaAs, which was further verified by Raman results. The observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the E-0 + Delta(0) energy level were very similar to those from the E-0 of GaAs. This mainly resulted from the common conduction band around Gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk GaAs were mainly determined by the intrinsic properties of the conduction band. Our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.