Long-term changes in crustacean zooplankton and water quality in a shallow, eutrophic Chinese lake densely stocked with fish

From surveys made in 1962-1963, 1973-1974, 1979-1996 at two Stations in Lake Donghu, a shallow eutrophic water body near Wuhan, P. R. China, the authors, derive long-term changes in species composition, standing crop and body-size of planktonic crustaceans. The species number decreased from the 1960s to the 1990s. The cladocerans dropped from 46 (1960s) to 26 (1980s) to 13 (1990s); the copepods decreased from 14 (1960s) to 10 (1980s) to 7 (1990s). From the mid-1980s on, the dominant crustaceans also changed: Daphnia hyalina and D. carinata ssp. were replaced by Moina micrura and Diaphanosoma brachyurum at Stations 1 and 2, respectively; Cyclops vicinus replaced Mesocyclops leuckarti. Densities and biomass of Cladocera decreased markedly after 1987. Annual average densities and biomass of cladocerans were statistically differences between 1962-1986 and 1987-1996 (P < 0.01). Annual average densities of Daphnia (Station 1 + Station 2) were negatively correlated with fish yield. Since the 1980s, annual average body length of Cladocera and Calanoida decreased, while annual average body length of Cyclopoida increased. In the same years, average body length of copepods was lower during May-October than during January-April and November-December. A 12-yr data analysis showed annual average concentration of chlorophyll-a (Chl-a) to be negatively correlated with annual average density of Daphnia, whilst lake transparency was positively correlated with annual average densities of Daphnia. The results imply that, since Daphnia feeds efficiently on phytoplankton, it could decrease concentration of Chl-a, and enhance water transparency.

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.