Self-assembled InAs/GaAs quantum dots and quantum dot laser

Systematic study of molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs, In-AlAs/AlGaAs/GaAs, and InAs/InAlAs/InP quantum dots (QDs) is demonstrated. By adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 1 W is achieved from vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). An RT CW output power of 0.53 W ensures at least 3 000 h lasing (only drops 0.83 db). This is one of the best results ever reported.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

多级多版本数据库管理系统全局串行化

多级调度应该保证事务历史可串行化,满足多级安全特性,不会引入隐通道,并保证高级别事务不会因为无限等待而"饿死".与其他多级数据管理系统调度机制相比,多级多版本时戳调度机制满足上述要求,但该机制存在两个问题,一是事务可能读旧版本,二是要求调度器是可信进程.提出一种多级多版本全局时戳调度机制(MLS_MVGTO),以及依据事务快照生成其全局时戳的基本步骤.给出了预知只读事务信息时的两种改进方法.MLS_MVGTO机制生成的事务历史可串行化,不引入隐通道等,并且该方法避免引入一个全局可信的调度器,并通过对只读事务的深入分析,允许事务读新版本.

基于手势和草图的概念设计协同交互的研究

基于手势和草图的交互模式提供了一种自然和谐的方式来支持概念设计协同操作,促进协同工作系统的发展与应用.基于以用户为中心的设计,比较了不同方式的概念设计过程,提出了基于手势和草图的协同设计方法,进一步讨论了以草图为设计过程中的信息载体,分析了草图信息模型;基于手势操作,提出了协同上下文感知的概念和协同设计上下文描述模型;最后分析并给出面向同步编辑的草图交互设计和双向约束求解方法.所提出的协同设计方法自然简便,提高了设计效率,改善了人机交互方式.

回转窑热解处理废锌锰电池试验研究

我国电池生产量已经达到209亿节（2003年），多年来一直占据世界第一大电池生产国的地位，其中锌锰电池占大多数。废锌锰电池丢弃后，其中的重金属物质会逐渐渗透到地下，污染土壤和水体。重金属在生物体内富集，会使生物体致畸或致变。但同时，废锌锰电池中也含有大量有用的资源如锌、二氧化锰等。应对其进行回收利用，变废为宝。本文介绍了废锌锰电池回收处理的主要技术及研究进展，不同的处理技术回收废锌锰电池时的目标产物各不相同，但一般可分为以下几种：以单质形式回收锌、锰和汞；以合金的形式回收锌和锰；回收锌和二氧化锰；回收各金属元素制备复合微量元素肥料；回收锌、锰元素制备锰锌铁氧体；回收锌、锰元素制备硫酸锌和碳酸锰等。本文对一些废锌锰电池回收处理技术的优缺点从无害化程度、资源化程度、产品等级、工艺要求以及二次污染五个方面进行了分析和比较。在对国内外废锌锰电池回收处理技术进行分析比较的基础上提出了一种成本较低、可操作性较强的处理技术：先以干法除去废锌锰电池中的汞，然后以湿法除去其它的有害重金属并进一步加工制备有机螯合微量元素肥料。 本文以回转窑中物料停留时间的经验公式和传热学的知识设计和计算了回转窑的长度和内径尺寸、电热丝的功率以及外围的保温材料厚度等参数。用保温材料和润滑油相结合的方式对回转窑的连接部分实行密封。通过调整回转窑的转速和回转窑支架两端高度差的方式控制物料在回转窑中的停留时间，从而调节热解时间的长短。利用自动控制设备调节电热丝的功率从而调节试验中的热解温度。利用该回转窑在不同条件下对热解处理废锌锰电池进行了试验研究，热解过程中产生的尾气和颗粒物用一系列吸收液进行吸收和固定。 在热解试验中改变影响热解过程的三种因素：热解温度、热解时间和载气流速并按三因素四水平的正交方法安排试验。改变废锌锰电池热解过程中的热解温度、热解时间和载气流速三种因素进行正交试验并利用正交统计学的方法分析了这三种因素对热解除汞率的影响。利用ICP检测仪测定了各吸收液中汞的含量，并分析热解气体产物经过系列吸收液时汞被吸收的情况以及汞的形态分布。利用气相色谱仪对尾气成分进行了测定，并对热解过程中产气的过程和规律进行了分析。用X射线衍射测试的方法研究了热解前后锌锰电池的物质形态变化情况。对除汞率的正交统计分析表明，合适的热解条件为：热解温度690℃，热解时间100min，载气流速0.06m3/h，在这种试验条件下热解处理废锌锰电池的除汞率达到100%。同时还得到：热解时间对除汞效果影响最大，热解温度次之，载气流速的影响较小。ICP测试的结果表明：热解尾气在经过试验中设置的吸收瓶后，其中的汞被完全吸收，尾气中95%以上的汞以单质的形式存在。气相色谱分析的结果表明，热解开始后，废锌锰电池中的有机质迅速分解，其产物为C2H4、CH4和H2等。一段时间后，有机质的分解量大幅度减少，同时废电池中的石墨碳和高价金属氧化物发生氧化还原反应，生成CO气体。对废锌锰电池原料以及热解残渣的X射线衍射分析表明，当热解温度为350℃时，X射线衍射图谱上2θ值为35°附近的区域有新峰出现，但不明显，说明有结晶体形成但量不大。500℃时上述峰明显增强，这是由于ZnO和FeO形成了结晶体，同时在2θ值为41°附近有新峰出现，这是高价锰氧化物与石墨碳发生氧化还原反应生成了MnO并形成了结晶体。650℃时，2θ值在41°附近的峰显著增强，且热解过程中形成的峰稳定下来，基本上不再有新的结晶体生成。热解后，高价锰氧化物的相对含量从32.2%下降到4.6%，而MnO的相对含量则从6.4%上升到38.6%。热解后的残渣中晶体物质含量大，金属元素大多以低价态存在，适合于制备有机螯合微量元素肥料。

复杂地形下岸式波能装置的水动力学计算

本文从线性势流理论出发，用格林函数法对带前港的岸式波能装置(下简称岸式装置)作三维水动力分析，分析时考虑了岸式装置附近的复杂地形的影响。计算结果表明，复杂地形的影响是相当大的，不可忽略。