环境因子对萼花臂尾轮虫休眠卵萌发率的影响

萼花臂尾轮虫（Ｂｒａｃｈｉｏｎｕｓ ｃａｌｙｃｉｆｌｏｒｕｓ Ｐａｌｌａｓ）休眠卵在不同萌发条件下累积萌发率的结果显示：保存在休眠卵形成的原液中，温度为２０℃－３０℃时萌发率均较高，３０℃时用过滤湖水萌发时的萌发率最高（６５％）；保存在无机培养液中的休眠卵，用曝气自来水萌发时最高，用湖水次之，无机液萌发效果较差２０℃和２５℃时三种萌发液中的萌发率接近；母体投喂小球藻形成的休眠卵的累积萌发率高于投喂混合藻组，且以过滤湖水为孵化液时效果较佳；累积萌发率与光照时间的长短并无直接关系（Ｐ＞０．０５）；休眠卵在５℃

显著车轮虫无性繁殖生物学研究

显著车轮虫无性繁殖过程中,其新齿环在分裂前期发生于旧齿环和辐线环之间;由细线状圆环分节以覆瓦式排列,其数目常为旧环的一倍,少数个体有增多。随着虫体发育,新环依次长出齿钩、锥体、齿棘。旧环则依齿钩、齿棘、锥体、齿钩柄的顺序消失;口沟、伸缩泡均在分裂前期分裂,各自形成两个新的口沟、伸缩泡;新辐线在子体发育初或中期才发生于新齿环外缘,总数为旧辐线的一倍。该虫无性繁殖以24小时为一周期。分裂前期需0.5—1小时;分裂期需1—3分钟。幼虫生长发育期需1.5—3小时。成虫生长成熟期需20—22小时。无论幼虫、童虫和成

武汉东湖大茨藻群落的研究

本文总结了1962—1964年和1972—1982年对东湖大茨藻群落的研究工作。研究的主要内容有:群落面积和生物量的逐年变化,物候相和种子发芽率,植物的光合作用和呼吸作用,以及植物群落对太阳能量的利用效率。最后提出了对大茨藻群落的改造问题。

城郊养鱼高产湖塘理化特点及生物相的分析

本文报导 1973年武汉市郊两个渔业高产湖塘的理化、生物环境特点,并分析了各类环境因素间的关系。在养殖季节中,湖水溶氧量通常在7毫克/升以上,总氮平均为2.63毫克/升,总磷平均为0.38毫克/升;浮游植物平均为2,199×10~4-3,080×10~4个/升,主要为硅藻,甲藻和绿藻等小型种类;浮游动物平均为39,200-74,318个/升,以原生动物和轮虫为主。文中提出了各类环境因素间相互关系的方程式,定量地描述了饵料生物丰度和氮、磷的关系。

Efficient RNA interference in zebrafish embryos using siRNA synthesized with SP6 RNA polymerase

Double-stranded RNA (dsRNA) has been shown to be a useful tool for silencing genes in zebrafish (Danio rerio), while the blocking specificity of dsRNA is still of major concern for application. It was reported that siRNA (small interfering RNA) prepared by endoribonuclease digestion (esiRNA) could efficiently silence endogenous gene expression in mammalian embryos. To test whether esiRNA could work in zebrafish, we utilized Escherichia coli RNaseIII to digest dsRNA of zebrafish no tail (ntl), a mesoderm determinant in zebrafish and found that esi-ntl could lead to developmental defects, however, the effective dose was so close to the toxic dose that esi-ntl often led to non-specific developmental defects. Consequently, we utilized SP6 RNA polymerase to produce si-ntl, siRNA designed against ntl, by in vitro transcription. By injecting in vitro synthesized si-ntl into zebrafish zygotes, we obtained specific phenocopies of reported mutants of ntl. We achieved up to a 59%no tail phenotype when the injection concentration was as high as 4 mu g/mu L. Quantitative reverse transcription-polymerase chain reaction (RT-PCR) and whole-mount in situ hybridization analysis showed that si-ntl could largely and specifically reduce mRNA levels of the ntl gene. As a result, our data indicate that esiRNA is unable to cause specific developmental defects in zebrafish, while siRNA should be an alternative for downregulation of specific gene expression in zebrafish in cases where RNAi techniques are applied to zebrafish reverse genetics.

Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes

Hybrid bulk heterojunction solar cells based on blend of poly(3-hexylthiophene) (P3HT) and TiO2 nanotubes or dye(N719) modified TiO2 nanotubes were processed from solution and characterized to research the nature of organic/inorganic hybrid materials. Compared with the pristine polymer P3HT and TiO2 nanoparticles/P3HT solar cells, the TiO2 nanotubes/P3HT hybrid solar cells show obvious performance improvement, due to the formation of the bulk heterojunction and charge transport improvement. A further improvement in the device performance can be achieved by modifying TiO2 nanotube surface with a standard dye N719 which can play a role in the improvement of both the light absorption and charge dissociation. Compared with the non-modified TiO2 nanotubes solar cells, the modified ones have better power conversion efficiency under 100 mW/cm(2) illumination with 500W Xenon lamp. (C) 2008 Elsevier B. V. All rights reserved.

Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.