High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

InN layers grown by MOCVD on SrTiO3 substrates

Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]InN parallel to [<(1)over bar > 1 0]STO and [2 <(1 1)over bar > 0]InN parallel to[<(1)over bar > 1 0]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides. (C) 2009 Elsevier B.V. All rights reserved

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

NUSH分组密码的线性密码分析

NUSH是NESSIE公布的17个候选分组密码之一.对不同分组长度和密钥规模的NUSH进行了线性密码分析,每一种攻击的复杂度δ由它所需的数据复杂度ε和处理复杂度η组成,记为δ=(ε,η).对于分组长度为64 bit的NUSH,当密钥为128 bit时,3种攻击的复杂度分别为(258,2124)、(260,278)和(262,255);当密钥为192 bit时,3种攻击的复杂度分别为(258,2157)、(260,296)和(262,258);当密钥为256 bit时,3种攻击的复杂度分别为(258,2125)、(260,278)和(262,253).对于分组长度为128 bit的NUSH,当密钥为128bit时,3种攻击的复杂度分别为(2122,295)、(2124,257)和(2126,252);当密钥为192 bit时,3种攻击的复杂度分别为(2122,2142)、(2124,275)和(2126,258);当密钥为256 bit时,3种攻击的复杂度分别为(2122,2168)、(1224,281)和(2126,264).对于分组长度为256 bit的NUSH,当密钥为128 bit时,两种攻击的复杂度分别为(2252,2122)和(2254,2119);当密钥为192 bit时,两种攻击的复杂度分别为(2252,2181)和(2254,2177);当密钥为256 bit时,两种攻击的复杂度分别为(2252,2240)和(2254,2219).这些结果显示NUSH对线性密码分析是不免疫的,而且密钥规模的增大不能保证安全性的提高.

MPI同步通信顺序模型死锁静态检测算法

静态检测MPI程序同步通信死锁比较困难,通常需要建立程序模型.顺序模型是其他所有复杂模型的基础.通过一种映射方法将顺序模型转化为字符串集合,将死锁检测问题转化为等价的多队列字符申匹配问题,从而设计并实现了一种MPI同步通信顺序模型的静态死锁检测算法.该算法的性能优于通常的环检测方法,并能适应动态消息流.

计算机取证的相关法律技术问题研究

法律界研究计算机证据的有关法律特性及其认定,而计算机科学领域的研究人员则从技术的角度研究计算证据的技术特征及其获取技术.由于这一学科是建立在法学和计算机科学之上的交叉学科,必须从这两个学科及其派生学科上体现出的特殊性的角度对其进行研究.在这一领域把法律和技术分离的做法会导致法律认定上的错误和技术上的无序性.通过将法律和计算机技术相结合对计算机取证进行了研究.阐明了计算机取证的相关法律问题,重点研究了计算机取证的技术方法和工具,并给出了一个计算机取证实验的技术过程.提出了目前计算机取证相关法律法规和计算机取证技术的不足,指出了今后法律法规的进一步健全、计算机取证工作的规范化和计算机取证技术的发展趋势.

research on user-centered design and recognition pen gestures

Pen-based user interface has become a hot research field in recent years. Pen gesture plays an important role in Pen-based user interfaces. But it’s difficult for UI designers to design, and for users to learn and use. In this purpose, we performed a research on user-centered design and recognition pen gestures. We performed a survey of 100 pen gestures in twelve famous pen-bases systems to find problems of pen gestures currently used. And we conducted a questionnaire to evaluate the matching degree between commands and pen gestures to discover the characteristics that a good pen gestures should have. Then cognition theories were applied to analyze the advantages of those characteristics in helping improving the learnability of pen gestures. From these, we analyzed the pen gesture recognition effect and presented some improvements on features selection in recognition algorithm of pen gestures. Finally we used a couple of psychology experiments to evaluate twelve pen gestures designed based on the research. It shows those gestures is better for user to learn and use. Research results of this paper can be used for designer as a primary principle to design pen gestures in pen-based systems.