Effect of composition on thermoelectric properties of polycrystalline CrSi2

Ingots with compositions CrSi2-x (with 0 < x < 0.1) were synthesized by vacuum arc melting followed by uniaxial hot pressing for densification. This paper reports the temperature and composition dependence of the electrical resistivity, Seebeck coefficient, and thermal conductivity of CrSi2-x samples in the temperature range of 300 K to 800 K. The silicon-deficient samples exhibited substantial reductions in resistivity and Seebeck coefficient over the measured temperature range due to the formation of metallic secondary CrSi phase embedded in the CrSi2 matrix phase. The thermal conductivity was seen to exhibit a U-shaped curve with respect to x, exhibiting a minimum value at the composition of x = 0.04. However, the limit of the homogeneity range of CrSi2 suppresses any further decrease of the lattice thermal conductivity. As a consequence, the maximum figure of merit of ZT = 0.1 is obtained at 650 K for CrSi1.98.

Quantum phases and phase transitions of frustrated hard-core bosons on a triangular ladder

Kinetically frustrated bosons at half filling in the presence of a competing nearest-neighbor repulsion support a wide supersolid regime on the two-dimensional triangular lattice. We study this model on a two-leg ladder using the finite-size density-matrix renormalization-group method, obtaining a phase diagram which contains three phases: a uniform superfluid (SF), an insulating charge density wave (CDW) crystal, and a bond ordered insulator (BO). We show that the transitions from SF to CDW and SF to BO are continuous in nature, with critical exponents varying continuously along the phase boundaries, while the transition from CDW to BO is found to be first order. The phase diagram is also found to contain an exactly solvable Majumdar Ghosh point, and reentrant SF to CDW phase transitions.

Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors

Gd2O3-based metal-insulator-metal capacitors have been characterized with single layer (Gd2O3) and bilayer (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) stacks for analog and DRAM applications. Although single layer Gd2O3 capacitors provide highest capacitance density (15 fF/mu m(2)), they suffer from high leakage current density, poor capacitance density-voltage linearity, and reliability. The stacked dielectrics help to reduce leakage current density (1.2x10(-5) A/cm(2) and 2.7 x 10(-5) A/cm(2) for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at -1 V), improve quadratic voltage coefficient of capacitance (331 ppm/V-2 and 374 ppm/V-2 for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at 1 MHz), and improve reliability, with a marginal reduction in capacitance density. This is attributed to lower trap heights as determined from Poole-Frenkel conduction mechanism, and lower defect density as determined from electrode polarization model.

Preliminary study of the effects of carbon nanotubes on Cpu cooling

Managing heat produced by computer processors is an important issue today, especially when the size of processors is decreasing rapidly while the number of transistors in the processor is increasing rapidly. This poster describes a preliminary study of the process of adding carbon nanotubes (CNTs) to a standard silicon paste covering a CPU. Measurements were made in two rounds of tests to compare the rate of cool-down with and without CNTs present. The silicon paste acts as an interface between the CPU and the heat sink, increasing the heat transfer rate away from the CPU. To the silicon paste was added 0.05% by weight of CNTs. These were not aligned. A series of K-type thermocouples was used to measure the temperature as a function of time in the vicinity of the CPU, following its shut-off. An Omega data acquisition system was attached to the thermocouples. The CPU temperature was not measured directly because attachment of a thermocouple would have prevented its automatic shut-off A thermocouple in the paste containing the CNTs actually reached a higher temperature than the standard paste, an effect easily explained. But the rate of cooling with the CNTs was about 4.55% better.

Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation

Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

Optical read-out scheme based on Grated Waveguide Cantilever cavity resonance for interrogation of cantilever sensor arrays

The design and analysis of an optical read-out scheme based on a grated waveguide (GWG) resonator for interrogating microcantilever sensor arrays is presented. The optical system consisting of a micro cantilever monolithically integrated in proximity to a grated waveguide (GWG), is realized in silicon optical bench platform. The mathematical analysis of the optical system is performed using a Fabry-Perot interferometer model with a lossy cavity formed between the cantilever and the GWG and an analytical expression is derived for the optical power transmission as a function of the cantilever deflection which corresponds to cavity width variation. The intensity transmission of the optical system for different cantilever deflections estimated using the analytical expression captures the essential features exhibited by a FDTD numerical model.

Photoelectron spectromicroscopy study of metal-insulator transition in NaxWO3

We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, NaxWO(3) by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of NaxWO(3) reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in NaxWO(3). The possible origin of insulating phase in NaxWO(3) is due to the Anderson localization of all the states near E-F. The localization occurs because of the strong disorder arising from random distribution of Na+ ions in the WO3 lattice.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

Effect of Stress and Interface defects on Photo Luminescence of Si nano-crystals embedded in SiO2

Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-nc) embedded in amorphous silicon dioxide (a-SiO2) are studied in this paper using a self-consistent quantum-continuum based modeling framework. Si-ncs or quantum dots show photoluminescence at room temperature. Whether its origin is due to Si-nc/a-SiO2 interface defects or quantum confinement of carriers in Si-nc is still an outstanding question. Earlier reports have shown that stresses greater than 12 GPa change the indirect energy band gap structure of bulk Si to a direct energy band gap structure. Such stresses are observed very often in nanostructures and these stresses influence the carrier confinement energy significantly. Hence, it is important to determine the effect of stress in addition to the structure of interface defects on photoluminescence property of Si-nc. In the present work, first a Si-nc embedded in a-SiO2 is constructed using molecular dynamics simulation framework considering the actual conditions they are grown so that the interface and residual stress in the structure evolves naturally during formation. We observe that the structure thus created has an interface of about 1 nm thick consisting of 41.95% of defective states mostly Sin+ (n = 0 to 3) coordination states. Further, both the Si-nc core and the embedding matrix are observed to be under a compressive strain. This residual strain field is applied in an effective mass k.p Hamiltonian formulation to determine the energy states of the carriers. The photo luminescence property computed based on the carrier confinement energy and interface energy states associated with defects will be analysed in details in the paper.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Enhanced Field Emission Properties from CNT Arrays Synthesized on Inconel Superalloy

One of the most promising materials for fabricating cold cathodes for next generation high-performance flat panel devices is carbon nanotubes (CNTs). For this purpose, CNTs grown on metallic substrates are used to minimize contact resistance. In this report, we compare properties and field emission performance of CNTs grown via water assisted chemical vapor deposition using Inconel vs silicon (Si) substrates. Carbon nanotube forests grown on Inconel substrates are superior to the ones grown on silicon; low turn-on fields (similar to 1.5 V/mu m), high current operation (similar to 100 mA/cm(2)) and very high local field amplification factors (up to similar to 7300) were demonstrated, and these parameters are most beneficial for use in vacuum microelectronic applications.

Origin of noise in two dimensionally doped Silicon and Germanium

We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P delta-layers at low temperatures. For the Si: P d-layers we find that the noise is several orders of magnitude lower than that of bulk Si: P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. Ge: P d-layers as a function of perpendicular magnetic field, shows a factor of two reduction in noise magnitude at the scale of B-phi, where B-phi is phase breaking field. We show that this is a characteristic feature of universal conductance fluctuations.

Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value U-AF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of U-AF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

Reentrant Superspin Glass Phase in a La0.82Ca0.18MnO3 Ferromagnetic Insulator

We report results of the magnetization and ac susceptibility measurements down to very low fields on a single crystal of the perovskite manganite, La-0.82 Ca-0.18 MnO3. This composition falls in the intriguing ferromagnetic insulator region of the manganite phase diagram. In contrast to earlier beliefs, our investigations reveal that magnetically (and in every other sense), this is a single- phase system with a ferromagnetic ordering temperature of around 170 K. However, this ferromagnetic state is magnetically frustrated, and the system exhibits pronounced glassy dynamics below 90 K. Based on measured dynamical properties, we propose that this quasi-long-ranged ferromagnetic phase, and the associated superspin glass behavior, is the true magnetic state of the system, rather than being a macroscopic mixture of ferromagnetic and antiferromagnetic phases, as often suggested. Our results provide an understanding of the quantum phase transition from an antiferromagnetic insulator to a ferromagnetic metal via this ferromagnetic state as a function of x in La1-xCaxMnO3, in terms of the possible formation of magnetic polarons.

Effect Of Mo Doping On The Electrical Properties Of VO2 Phase

Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The as-synthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to similar to 40 nm. Particle size measurement carried out using Transmission electron microscope ( TEM) agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal- insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.