Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior


Autoria(s): Garg, Arti; Krishnamurthy, HR; Randeria, Mohit
Data(s)

2014

Resumo

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value U-AF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of U-AF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/48948/1/phy_rev_let_112-10_2014.pdf

Garg, Arti and Krishnamurthy, HR and Randeria, Mohit (2014) Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior. In: PHYSICAL REVIEW LETTERS, 112 (10).

Publicador

AMER PHYSICAL SOC

Relação

http://dx.doi.org/10.1103/PhysRevLett.112.106406

http://eprints.iisc.ernet.in/48948/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed