Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior
Data(s) |
2014
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Resumo |
We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value U-AF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of U-AF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/48948/1/phy_rev_let_112-10_2014.pdf Garg, Arti and Krishnamurthy, HR and Randeria, Mohit (2014) Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior. In: PHYSICAL REVIEW LETTERS, 112 (10). |
Publicador |
AMER PHYSICAL SOC |
Relação |
http://dx.doi.org/10.1103/PhysRevLett.112.106406 http://eprints.iisc.ernet.in/48948/ |
Palavras-Chave | #Physics |
Tipo |
Journal Article PeerReviewed |